Imaging Pulsed Laser Deposition oxide growth by in-situ Atomic Force Microscopy

To visualize the topography of thin oxide films during growth, thereby enabling to study its growth behavior quasi real-time, we have designed and integrated an atomic force microscope (AFM) in a pulsed laser deposition (PLD) vacuum setup. The AFM scanner and PLD target are integrated in a single support frame, combined with a fast sample transfer method, such that in-situ microscopy can be utilized after subsequent deposition pulses. The in-situ microscope can be operated from room temperature (RT) up to 700$^\circ$C and at (process) pressures ranging from the vacuum base pressure of 10$^{-6}$ mbar up to 1 mbar, typical PLD conditions for the growth of oxide films. The performance of this instrument is demonstrated by resolving unit cell height surface steps and surface topography under typical oxide PLD growth conditions.Comment: 8 pages, 8 figure

Electronic coupling between Bi nanolines and the Si(001) substrate: An experimental and theoretical study

Atomic nanolines are one dimensional systems realized by assembling many atoms on a substrate into long arrays. The electronic properties of the nanolines depend on those of the substrate. Here, we demonstrate that to fully understand the electronic properties of Bi nanolines on clean Si(001) several different contributions must be accounted for. Scanning tunneling microscopy reveals a variety of different patterns along the nanolines as the imaging bias is varied. We observe an electronic phase shift of the Bi dimers, associated with imaging atomic p-orbitals, and an electronic coupling between the Bi nanoline and neighbouring Si dimers, which influences the appearance of both. Understanding the interplay between the Bi nanolines and Si substrate could open a novel route to modifying the electronic properties of the nanolines.Comment: 6 pages (main), 2 pages (SI), accepted by Phys. Rev.

Determining the energetics of vicinal perovskite oxide surfaces

The energetics of vicinal SrTiO$_3$(001) and DyScO$_3$(110), prototypical perovskite vicinal surfaces, has been studied using topographic atomic force microscopy imaging. The kink formation and strain relaxation energies are extracted from a statistical analysis of the step meandering. Both perovskite surfaces have very similar kink formation energies and exhibit a similar triangular step undulation. Our experiments suggest that the energetics of perovskite oxide surfaces is mainly governed by the local oxygen coordination.Comment: 16 pages, 4 figure

Spin Density Matrix of Spin-3/2 Hole Systems

For hole systems with an effective spin j=3/2, we present an invariant decomposition of the spin density matrix that can be interpreted as a multipole expansion. The charge density corresponds to the monopole moment and the spin polarization due to a magnetic field corresponds to a dipole moment while heavy hole-light hole splitting can be interpreted as a quadrupole moment. For quasi two-dimensional hole systems in the presence of an in-plane magnetic field B the spin polarization is a higher-order effect that is typically much smaller than one even if the minority spin subband is completely depopulated. On the other hand, the field B can induce a substantial octupole moment which is a unique feature of j=3/2 hole systems.Comment: 8 pages, 1 figure, 3 table

Invariant expansion for the trigonal band structure of graphene

We present a symmetry analysis of the trigonal band structure in graphene, elucidating the transformational properties of the underlying basis functions and the crucial role of time-reversal invariance. Group theory is used to derive an invariant expansion of the Hamiltonian for electron states near the K points of the graphene Brillouin zone. Besides yielding the characteristic k-linear dispersion and higher-order corrections to it, this approach enables the systematic incorporation of all terms arising from external electric and magnetic fields, strain, and spin-orbit coupling up to any desired order. Several new contributions are found, in addition to reproducing results obtained previously within tight-binding calculations. Physical ramifications of these new terms are discussed.Comment: 10 pages, 1 figure; expanded version with more details and additional result

Localized Control of Curie Temperature in Perovskite Oxide Film by Capping-layer- induced Octahedral Distortion

With reduced dimensionality, it is often easier to modify the properties of ultra-thin films than their bulk counterparts. Strain engineering, usually achieved by choosing appropriate substrates, has been proven effective in controlling the properties of perovskite oxide films. An emerging alternative route for developing new multifunctional perovskite is by modification of the oxygen octahedral structure. Here we report the control of structural oxygen octahedral rotation in ultra-thin perovskite SrRuO3 films by the deposition of a SrTiO3 capping layer, which can be lithographically patterned to achieve local control. Using a scanning Sagnac magnetic microscope, we show increase in the Curie temperature of SrRuO3 due to the suppression octahedral rotations revealed by the synchrotron x-ray diffraction. This capping-layer-based technique may open new possibilities for developing functional oxide materials.Comment: Main-text 5 pages, SI 6 pages. To appear in Physical Review Letter

Determination of the spin-flip time in ferromagnetic SrRuO3 from time-resolved Kerr measurements

We report time-resolved Kerr effect measurements of magnetization dynamics in ferromagnetic SrRuO3. We observe that the demagnetization time slows substantially at temperatures within 15K of the Curie temperature, which is ~ 150K. We analyze the data with a phenomenological model that relates the demagnetization time to the spin flip time. In agreement with our observations the model yields a demagnetization time that is inversely proportional to T-Tc. We also make a direct comparison of the spin flip rate and the Gilbert damping coefficient showing that their ratio very close to kBTc, indicating a common origin for these phenomena

Effective calculation of LEED intensities using symmetry-adapted functions

The calculation of LEED intensities in a spherical-wave representation can be substantially simplified by symmetry relations. The wave field around each atom is expanded in symmetry-adapted functions where the local point symmetry of the atomic site applies. For overlayer systems with more than one atom per unit cell symmetry-adapted functions can be used when the division of the crystal into monoatomic subplanes is replaced by division into subplanes containing all symmetrically equivalent atomic positions