Evaluation of Bacterial Adhesion to the ZrO2 Atomic Layer Deposited on the Surface of Cobalt-Chromium Dental Alloy Produced by DMLS Method

The main purpose of the research was to analyze the influence of surface modification of the cobalt-based alloy used in dental prosthetics by applying zirconium oxide (ZrO2) layers using the ALD (Atomic Layer Deposition) method. The samples were made using the DMLS (Direct Metal Laser Sintering) technique, and their surfaces were prepared in accordance with the principles of removable partial dentures (RPDs). A 50 nm-thick zirconium oxide coating was applied to the prepared substrates. This paper deals with the issues of prosthetic stomatopathy, which is a complex of pathological changes occurring in approx. 40% of the Polish population using removable dentures. Often, these changes, occurring on the mucosa, are related to improper performance, allergic reactions or the multiplication of bacteria on the surface of partial dentures. An innovative method of surface modification was proposed, together with the analysis of its influence on the physicochemical properties of the alloy and the adhesion of bacteria to the surface

MOVPE InP based material for millimeter and submillimeter wave generation and amplification, Journal of Telecommunications and Information Technology, 2002, nr 1

The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the improved homogeneity and purity, the precision of mono-layers growth and wide spectrum III-V compounds makes MOVPE techniques very attractive for modern device applications. The characterisation results of the heterostructures dedicated for HBV varactors and 2-DEG transistors (HEMT) are described

MOVPE InP based material for millimetsubmillimeter wave generation and amplificationer and

The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the improved homogeneity and purity, the precision of mono-layers growth and wide spectrum III-V compounds makes MOVPE techniques very attractive for modern device applications. The characterisation results of the heterostructures dedicated for HBV varactors and 2-DEG transistors (HEMT) are described