A Silicon Nanocrystal Schottky Junction Solar Cell produced from Colloidal Silicon Nanocrystals

Solution-processed semiconductors are seen as a promising route to reducing the cost of the photovoltaic device manufacture. We are reporting a single-layer Schottky photovoltaic device that was fabricated by spin-coating intrinsic silicon nanocrystals (Si NCs) from colloidal suspension. The thin-film formation process was based on Si NCs without any ligand attachment, exchange, or removal reactions. The Schottky junction device showed a photovoltaic response with a power conversion efficiency of 0.02%, a fill factor of 0.26, short circuit-current density of 0.148 mA/cm2, and open-circuit voltage of 0.51 V

Combined plasma gas-phase synthesis and colloidal processing of InP/ZnS core/shell nanocrystals

Indium phosphide nanocrystals (InP NCs) with diameters ranging from 2 to 5 nm were synthesized with a scalable, flow-through, nonthermal plasma process at a rate ranging from 10 to 40 mg/h. The NC size is controlled through the plasma operating parameters, with the residence time of the gas in the plasma region strongly influencing the NC size. The NC size distribution is narrow with the standard deviation being less than 20% of the mean NC size. Zinc sulfide (ZnS) shells were grown around the plasma-synthesized InP NCs in a liquid phase reaction. Photoluminescence with quantum yields as high as 15% were observed for the InP/ZnS core-shell NCs

Tuning Nanocrystal Surface Depletion by Controlling Dopant Distribution as a Route Toward Enhanced Film Conductivity

Electron conduction through bare metal oxide nanocrystal (NC) films is hindered by surface depletion regions resulting from the presence of surface states. We control the radial dopant distribution in tin-doped indium oxide (ITO) NCs as a means to manipulate the NC depletion width. We find in films of ITO NCs of equal overall dopant concentration that those with dopant-enriched surfaces show decreased depletion width and increased conductivity. Variable temperature conductivity data shows electron localization length increases and associated depletion width decreases monotonically with increased density of dopants near the NC surface. We calculate band profiles for NCs of differing radial dopant distributions and, in agreement with variable temperature conductivity fits, find NCs with dopant-enriched surfaces have narrower depletion widths and longer localization lengths than those with dopant-enriched cores. Following amelioration of NC surface depletion by atomic layer deposition of alumina, all films of equal overall dopant concentration have similar conductivity. Variable temperature conductivity measurements on alumina-capped films indicate all films behave as granular metals. Herein, we conclude that dopant-enriched surfaces decrease the near-surface depletion region, which directly increases the electron localization length and conductivity of NC films

Plasma synthesis of single crystal silicon nanoparticles for novel electronic device applications

Single-crystal nanoparticles of silicon, several tens of nm in diameter, may be suitable as building blocks for single-nanoparticle electronic devices. Previous studies of nanoparticles produced in low-pressure plasmas have demonstrated the synthesis nanocrystals of 2-10 nm diameter but larger particles were amorphous or polycrystalline. This work reports the use of a constricted, filamentary capacitively coupled low-pressure plasma to produce single-crystal silicon nanoparticles with diameters between 20-80 nm. Particles are highly oriented with predominant cubic shape. The particle size distribution is rather monodisperse. Electron microscopy studies confirm that the nanoparticles are highly oriented diamond-cubic silicon.Comment: accepted for publication in Plasma Physics and Controlled Fusion, scheduled for Dec. 2004 F

Aluminum Oxide Nanoparticle Films Deposited from a Nonthermal Plasma: Synthesis, Characterization, and Crystallization

Aluminum oxide, both in amorphous and crystalline forms, is a widely used inorganic ceramic material because of its chemical and structural properties. In this work, we synthesized amorphous aluminum oxide nanoparticles using a capacitively coupled nonthermal plasma utilizing trimethylaluminum and oxygen as precursors and studied their crystallization and phase transformation behavior through postsynthetic annealing. The use of two reactor geometries resulted in amorphous aluminum oxide nanoparticles with similar compositions but different sizes. Size tuning of these nanoparticles was achieved by varying the reactor pressure to produce amorphous aluminum oxide nanoparticles ranging from 6 to 22 nm. During postsynthetic annealing, powder samples of amorphous nanoparticles began to crystallize at 800 °C, forming crystalline θ and γ phase alumina. Their phase transformation behavior was found to be size-dependent in that powders of small 6 nm amorphous particles transformed to form phase-pure α-Al₂O₃ at 1100 °C, while powders of large 11 nm particles remained in the θ and γ phases. This phenomenon is attributed to the fast rate of densification and neck formation in small amorphous aluminum oxide particles

Aluminum Oxide Nanoparticle Films Deposited from a Nonthermal Plasma: Synthesis, Characterization, and Crystallization

Aluminum oxide, both in amorphous and crystalline forms, is a widely used inorganic ceramic material because of its chemical and structural properties. In this work, we synthesized amorphous aluminum oxide nanoparticles using a capacitively coupled nonthermal plasma utilizing trimethylaluminum and oxygen as precursors and studied their crystallization and phase transformation behavior through postsynthetic annealing. The use of two reactor geometries resulted in amorphous aluminum oxide nanoparticles with similar compositions but different sizes. Size tuning of these nanoparticles was achieved by varying the reactor pressure to produce amorphous aluminum oxide nanoparticles ranging from 6 to 22 nm. During postsynthetic annealing, powder samples of amorphous nanoparticles began to crystallize at 800 °C, forming crystalline θ and γ phase alumina. Their phase transformation behavior was found to be size-dependent in that powders of small 6 nm amorphous particles transformed to form phase-pure α-Al₂O₃ at 1100 °C, while powders of large 11 nm particles remained in the θ and γ phases. This phenomenon is attributed to the fast rate of densification and neck formation in small amorphous aluminum oxide particles

Observations of Microwave Continuum Emission from Air Shower Plasmas

We investigate a possible new technique for microwave measurements of ultra-high energy cosmic ray (UHECR) extensive air showers which relies on detection of expected continuum radiation in the microwave range, caused by free-electron collisions with neutrals in the tenuous plasma left after the passage of the shower. We performed an initial experiment at the AWA (Argonne Wakefield Accelerator) laboratory in 2003 and measured broadband microwave emission from air ionized via high energy electrons and photons. A follow-up experiment at SLAC (Stanford Linear Accelerator Center) in summer of 2004 confirmed the major features of the previous AWA observations with better precision and made additional measurements relevant to the calorimetric capabilities of the method. Prompted by these results we built a prototype detector using satellite television technology, and have made measurements indicating possible detection of cosmic ray extensive air showers. The method, if confirmed by experiments now in progress, could provide a high-duty cycle complement to current nitrogen fluorescence observations of UHECR, which are limited to dark, clear nights. By contrast, decimeter microwave observations can be made both night and day, in clear or cloudy weather, or even in the presence of moderate precipitation.Comment: 15 pages, 13 figure