Психолого­педагогічні методи розвитку творчого мислення для студентів ВНЗ

The article focuses on different psychological and pedagogical methods of development of creative thinking in students in the institutes of higher education. These methods can be implemented during educational process and are intended for the training of qualified employees of new type. The conducted study shows the necessity to create conditions that will promote the formation of creative thinking and respective student motivation in Ukrainian institutes of higher education. This is necessary for the further professional student’s activity and is connected with the changes in economics and the requirements of the job market for qualified personnel that can effectively solve the assigned tasks. It is shown that for creative thinking formation the different methods of problem training approved in the economically developed countries have to be used. The analysis shows that cooperation between businesses and universities can ensure the high level of the research works, which will stimulate the creative potential development in students as well as will help to implement new education technologies. Based on the experience of the foreign countries the ways of organizing education and the conditions of its financing are considered.У статті розглядаються психолого-педагогічні методи формування творчого мислення у студентів вищих навчальних закладів. Акцентується увага на різнихметодах розвитку творчого мислення під час організації навчального процесу для підготовки кваліфікованих кадрів нового типу. Проведені дослідження вказують на необхідність створення у ВНЗ України передумов, які всебічно сприятимуть формуванню творчого мислення та відповідної мотивації у студентів,необхідної у їх подальшій професійній діяльності. Завданням викладача ВНЗ є необхідність врахування економічних змін, пов’язаних із переорієнтацією наринкові відносини, що супроводжується зростанням потреби у кваліфікованих кадрах нового типу, які вміють ефективно й творчо виконувати поставлені завдання. Показано, що для формування творчого мислення у студентів ВНЗ слід використовувати різні методи проблемного навчання, апробовані в економічно розвинених країнах. Проведений аналіз діяльності провідних університетів показав, що тісна взаємодія компаній та університетів здатні забезпечити високий рівень науково-дослідних робіт, що сприятиме розвитку творчого потенціалу студентів, а також відіграє певну роль у впровадженні нових технологій навчання. На прикладі зарубіжних країн розглянуто шляхи організації навчання та умови його фінансування

Photoluminescence and structural properties of CdSe quantum dot-gelatin composite films

a b s t r a c t Optical and structural properties of composite films of CdSe quantum dots (QDs) embedded in gelatin matrix have been investigated by photoluminescence (PL), optical absorption and X-ray diffraction (XRD) methods. The optical absorption of the composite in the visible spectral range is found to be determined mainly by light absorption in the QDs. The decrease of the film transparency and the shift of the absorption edge to lower energies observed upon thermal annealing of the films at 140-160 1C are ascribed to the formation of chromophore groups in gelatin matrix. XRD patterns of the composite revealed helix to coil transition in gelatin matrix under thermal annealing of the composite at 100-160 1C. It is found that PL spectra of the composite are dominated by exciton and defect-related emission of the QDs and also contain weak emission of gelatin matrix. It is found that thermal annealing of the composite at 100-160 1C changes PL intensity and produces the shift of the PL bands to lower energies. As the annealed composite was kept in air for several months, the shift of exciton-related PL band position restored partially and the PL intensity increased. It is proposed that the increase of the PL intensity upon the thermal annealing of composite at 140 1C can be used for enhancement of the QDrelated PL. Changes that occurred in the PL spectra of composite are ascribed to structural and chemical transformations in gelatin matrix and at the QD/gelatin interface

Optical, structural and electrical characterization of pure ZnO films grown on p-type Si substrates by radiofrequency magnetron sputtering in different atmospheres

International audienceZnO films were grown on p-type Si substrates by radio-frequency magnetron sputtering of ZnO target in pure argon or mixed argon-oxygen plasma and were investigated using atomic force microscopy, spectroscopic ellipsometry, Fourier-transformed infrared spectroscopy and electrical methods. It was observed that the films grown in argon plasma had large surface roughness which increases with the rise of deposition time. The lateral size of ZnO columns showed similar dependence on deposition parameters as the roughness. Contrary to this, the films produced in argon-oxygen plasma were found to be smoother and denser having thinner ZnO columns. These films also demonstrated an abrupt absorption band-gap edge that is the evidence of better crystalline quality of these films (the lower number of native point and elongated defects). Plasmon-phonon interaction in ZnO films as well as the effect of the plasmon system of Si substrate on this interaction was considered. The theoretical approach used for the fitting of specular infrared reflection spectra allowed determining concentration and mobility of free carriers as well as conductivity of ZnO films. It was found that the films grown in pure argon plasma demonstrated a higher concentration and a smaller mobility of free carriers in the comparison with the corresponding parameters of the films grown in argon-oxygen mixed plasma. The direct resistivity measurements show the essentially higher values compared with the values estimated from IR reflection spectra. The possible reasons of this difference are discussed. The utility of infrared reflection spectroscopy for the non-destructive analysis of electro-physical properties of polycrystalline films was shown

Spectroscopic characterization of phase transformation in Ge-rich Al2O3 films grown by magnetron co-sputtering

International audienceThermally-stimulated evolution of optical and structural properties of Ge-rich-Al2O3 films with different Ge contents was investigated. As-deposited films and films annealed at TA ≤ 550 °C were found to be amorphous whatever the Ge content. The formation of amorphous Ge clusters occurs at TA = 550 °C, whereas their crystallization is prominent at TA = 600 °C requiring a shorter annealing time for the higher Ge content. The films annealed at TA = 550 °C showed broad photoluminescence spectrum. Its shape and intensity depend on Ge content and excitation energy. Annealing at TA = 600 °C results in the appearance of additional UV bands originated from the formation of GeOx phase covered Ge clusters. An analysis of excitation spectra was performed to distinguish the mechanism of light emission in these films as well as to discriminate contribution of carrier recombination in the Ge phase (amorphous clusters and/or nanocrystals) as well as via interface or host defects. The concentration and mobility of free carriers was also estimated

Photoluminescence, conductivity and structural study of terbium doped ZnO films grown on different substrates

International audienceThe effect of substrate material (Si, SiO2, Al2O3) on structural, optical and electrical properties of terbium doped ZnO films (Tb-ZnO) has been investigated by the X-ray diffraction, Raman scattering, atomic force microscopy, photoluminescence and infrared reflection methods. All films consist of micron size clusters of closely packed ZnO grains separated by deep trenches. The width of the trenches depends on the substrate material, being the largest in the Tb-ZnO/Al2O3 one. It is shown that the film on Al2O3 substrate contains the largest amount of extended and point defects. This film also demonstrates the highest intensity of Tb3+-related photoluminescence, while the film on Si substrate shows the lowest. On the contrary, the largest free carrier concentration evaluated from the infrared reflection spectra is found for Tb-ZnO/Si film and the lowest one is for the Tb-ZnO/Al2O3 film

Investigation of undoped and Tb-doped ZnO films on Al2O3 substrate by infrared reflection method

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Redistribution of Tb and Eu ions in ZnO films grown on different substrates under thermal annealing and its impact on Tb-Eu energy transfer

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