Modification of the microstructure of TiN-based columnar coatings in indentation zones

The columnar structure of titanium nitride–based coatings deposited by magnetron sputtering is studied. The structure–phase state of the coatings is analyzed after deposition and in the indentation zone. The type of dislocation structure, the grain size, the subgrain size, the misorientations at boundaries, and their change during coating growth are determined. The detected decrease (several tens of percent) in the coating thickness under an indenter indicates plastic deformation of a coating. On a microscopic level, this deformation manifests itself in an increase in the density, the misorientation, and the nonequilibrium of boundaries

Thermal stability of Ti-C-Ni-Cr and Ti-C-Ni-Cr-Al-Si nanocomposite coatings

The results of the microstructure, mechanical and tribological properties investigations of Ti-C-Ni-Cr and Ti-C-Ni-Cr-Al-Si nanocomposite coatings based on amorphous carbon in the initial state and after the annealing to 900 °C are presented. The effect of annealing temperature on the microstructure, tribological and mechanical properties of Ti-C- Ni-Cr and Ti-C-Ni-Cr-Al-Si nanostructured coatings is discussed

Investigation of the microstructure, mechanical properties and thermal stability of nanocomposite coatings based on amorphous carbon

The Ti-C-Ni-Cr and Ti-C-Ni-Cr-Al-Si nanocomposite coatings based on amorphous carbon and the nanosized particles were synthesized by magnetron method. The results of the microstructure features and mechanical properties investigations of these coatings are presented. The thermal stability of microstructure and properties of these coatings at tempering up to 900°C were investigated. These coatings have a high (11–18 GPa) hardness, low (μ < 0.2) the coefficient of friction and high thermal stability of the microstructure and properties up to 700°C. The features of elastically stressed state of nanosized particles in these coatings were founded. A high local internal stresses in the TiC nanoscale particles do not observed

Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films

Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data with mobility spectrum analysis. A substantial difference in the effects of arsenic implantation and post-implantation activation annealing on the properties of implanted layers and photodiode ‘base’ layers in Hg0.7Cd0.3Te and Hg0.8Cd0.2Te films was established and tentatively explained

Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition

In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 1012 -1015 ions/cm2 and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the film

Microstructure and mechanical properties of V-4Ti-4Cr alloy as a function of the chemical heat treatment regimes

The regularities of the formation of a heterophase structure and mechanical properties of V–4Ti–4Cr alloy as a function of thermomechanical and chemical heat treatments are studied. The regimes of thermomechanical treatment which provide the formation of a heterophase structure with a homogeneous volume distribution of oxycarbonitride nanoparticles with a size of about 10 nm and an increase in the volume content and thermal stability of this phase and which provide an increase in the temperature of alloy recrystallization are developed. The formation of the heterophase structure results in a substantial (up to 70%) increase in the short-term high-temperature strength of the alloy at T = 800°C. The increase in the strength is achieved while keeping a rather high level of plasticity

Properties of arsenic-implanted Hg1-xCdxTe MBE films

Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate

Localization and nature of radiation donor defects in the arsenic implanted CdHgTe films grown by MBE

By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular bea

Fluence dependence of nanosize defect layers in arsenic implanted HgCdTe epitaxial films studied with TEM/HRTEM

We report on the results of comparative study of fluence dependence of defect layers in molecular-beam epitaxy-grown epitaxial film of p-Hg1-х CdхTe (х=0.22) implanted with arsenic ions with 190 keV energy and fluence 1012, 1013, and 1014 cm-2