Artificial Intelligence: Application Today and Implications Tomorrow

This paper analyzes the applications of artificial intelligence to the legal industry, specifically in the fields of legal research and contract drafting. First, it will look at the implications of artificial intelligence (A.I.) for the current practice of law. Second, it will delve into the future implications of A.I. on law firms and the possible regulatory challenges that come with A.I. The proliferation of A.I. in the legal sphere will give laymen (clients) access to the information and services traditionally provided exclusively by attorneys. With an increase in access to these services will come a change in the role that lawyers must play. A.I. is a tool that will increase access to cheaper and more efficient services, but non-lawyers lack the training to analyze and understand information it puts out. The role of lawyers will change to fill this role, namely utilizing these tools to create a better work product with greater efficiency for their clients

GaN-based transistors using buffer-free heterostructures for next generation RF devices

International audienc

Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111)

A series of 3C-SiC films have been grown by a novel method of solid–gas phase epitaxy and studied by Raman scattering and scanning electron microscopy (SEM). It is shown that during the epitaxial growth in an atmosphere of CO, 3C-SiC films of high crystalline quality, with a thickness of 20 nm up to few hundreds nanometers can be formed on a (111) Si wafer, with a simultaneous growth of voids in the silicon substrate under the SiC film. The presence of these voids has been confirmed by SEM and micro-Raman line-mapping experiments. A significant enhancement of the Raman signal was observed in SiC films grown above the voids, and the mechanisms responsible for this enhancement are discussed

Использование принципа клиентоориентированности при формировании стратегии развития предприятий

Материалы межвуз. науч. конф. студентов, магистрантов и аспирантов, Гомель, 15 мая 2008 г

Concentrated chloride-based epitaxial growth of 4H-SiC Concentrated chloride-based epitaxial growth of 4H-SiC

Abstract. A chloride-based CVD process has been studied in concentrated growth conditions. A systematic study of different carrier flows and pressures has been done in order to get good quality epilayers on 8° off and on-axis substrates while using very low carrier flows. Hydrogen chloride (HCl) was added to the standard gas mixture to keep a high growth rate and to get homo-polytypic growth on on-axis substrates. The carrier flow was reduced down to one order of magnitude less than under typical growth condition. By lowering the process pressure it was possible to reduce precursor depletion along the susceptor which improved the thickness uniformity to below 2% variation (σ/mean) over a 2" diameter wafer