Scanning Probe Techniques for Characterization of Vertically Aligned Carbon Nanotubes

This chapter presents the results of experimental studies of the electrical, mechanical and geometric parameters of vertically aligned carbon nanotubes (VA CNTs) using scanning probe microscopy (SPM). This chapter also presents the features and difficulties of characterization of VA CNTs in different scanning modes of the SPM. Advanced techniques for VA CNT characterization (the height, Young’s modulus, resistivity, adhesion and piezoelectric response) taking into account the features of the SPM modes are described. The proposed techniques allow to overcome the difficulties associated with the vertical orientation and high aspect ratio of nanotubes in determining the electrical and mechanical parameters of the VA CNTs by standard methods. The results can be used in the development of diagnostic methods as well as in nanoelectronics and nanosystem devices based on vertically aligned carbon nanotubes (memory elements, adhesive structures, nanoelectromechanical switches, emission structures, etc.)

Multi-Watt Average Power Nanosecond Microchip Laser and Power Scalability Estimates

We demonstrated up to 2 W average power, CW-pumped, passively- Q-switched, 1.5 ns monolithic MCL with single-longitudinal mode-operation. We discuss laser design issues to bring the average power to 5-1 OW and beyond

Three Year Aging of Prototype Flight Laser at 10 Khz and 1 Ns Pulses with External Frequency Doubler for the Icesat-2 Mission

We present the results of three year life-aging of a specially designed prototype flight source laser operating at 1064 nm, 10 kHz, 1ns, 15W average power and external frequency doubler. The Fibertek-designed, slightly pressurized air, enclosed-container source laser operated at 1064 nm in active Q-switching mode. The external frequency doubler was set in a clean room at a normal air pressure. The goal of the experiment was to measure degradation modes at 1064 and 532 nm discreetly. The external frequency doubler consisted of a Lithium triborate, LiB3O5, crystal operated at non-critical phase-matching. Due to 1064 nm diagnostic needs, the amount of fundamental frequency power available for doubling was 13.7W. The power generated at 532 nm was between 8.5W and 10W, depending on the level of stress and degradation. The life-aging consisted of double stress-step operation for doubler crystal, at 0.35 J/cm2 for almost 1 year, corresponding to normal conditions, and then at 0.93 J/cm2 for the rest of the experiment, corresponding to accelerated testing. We observed no degradation at the first step and linear degradation at the second step. The linear degradation at the second stress-step was related to doubler crystal output surface changes and linked to laser-assisted contamination. We discuss degradation model and estimate the expected lifetime for the flight laser at 532 nm. This work was done within the laser testing for NASA's Ice, Cloud, and land Elevation Satellite-2 (ICESat-2) LIDAR at Goddard Space Flight Center in Greenbelt, MD with the goal of 1 trillion shots lifetime

Reduction of B-Integral Accumulation in Lasers

A pulsed laser is provided wherein the B-integral accumulated in the laser pulse is reduced using a semiconductor wafer. A laser pulse is generated by a laser pulse source. The laser pulse passes through a semiconductor wafer that has a negative nonlinear index of refraction. Thus, the laser pulse accumulates a negative B-integral. The laser pulse is then fed into a laser amplification medium, which has a positive nonlinear index of refraction. The laser pulse may make a plurality of passes through the laser amplification medium and accumulate a positive B-integral during a positive non-linear phase change. The semiconductor and laser pulse wavelength are chosen such that the negative B-integral accumulated in the semiconductor wafer substantially cancels the positive B-integral accumulated in the laser amplification medium. There may be additional accumulation of positive B-integral if the laser pulse passes through additional optical mediums such as a lens or glass plates. Thus , the effects of self-phase modulation in the laser pulse are substantially reduced

Piezoelectric Response of Multi-Walled Carbon Nanotubes

Recent studies in nanopiezotronics have indicated that strained graphene may exhibit abnormal flexoelectric and piezoelectric properties. Similar assumptions have been made with regard to the properties of carbon nanotubes (CNTs), however, this has not so far been confirmed. This paper presents the results of our experimental studies confirming the occurrence of a surface piezoelectric effect in multi-walled CNTs under a non-uniform strain. Using atomic force microscopy, we demonstrated the piezoelectric response of multi-walled CNTs under compression and bending. The current generated by deforming an individual CNT was shown to be −24 nA. The value of the surface potential at the top of the bundle of strained CNTs varied from 268 mV to −110 mV, depending on strain type and magnitude. We showed that the maximum values of the current and the surface potential can be achieved when longitudinal strain predominates in a CNT. However, increasing the bending strain of CNTs does not lead to a significant increase in current and surface potential, due to the mutual compensation of piezoelectric charges concentrated on the CNT side walls. The results of the study offer a number of opportunities and challenges for further fundamental research on the piezoelectric properties of carbon nanotubes as well as for the development of advanced CNT-based nanopiezotronic devices