Nanomechanical displacement detection using coherent transport in ordered and disordered graphene nanoribbon resonators

Graphene nanoribbons provide an opportunity to integrate phase-coherent transport phenomena with nanoelectromechanical systems (NEMS). Due to the strain induced by a deflection in a graphene nanoribbon resonator, coherent electron transport and mechanical deformations couple. As the electrons in graphene have a Fermi wavelength \lambda ~ a_0 = 1.4 {\AA}, this coupling can be used for sensitive displacement detection in both armchair and zigzag graphene nanoribbon NEMS. Here it is shown that for ordered as well as disordered ribbon systems of length L, a strain \epsilon ~ (w/L)^2 due to a deflection w leads to a relative change in conductance \delta G/G ~ (w^2/a_0L).Comment: 4 Pages, 4 figure

Electronic Raman scattering in Tl2Ba2CuO6+x: symmetry of the order parameter, oxygen doping effects, and normal state scattering

Single crystals of the optimally doped, moderately and strongly overdoped high temperature superconductor Tl2Ba2CuO6+x (Tl-2201) with Tc=80, 56 and 30K, respectively, have been investigated by polarized Raman scattering. By taking the peak position of the B_1g component of electronic Raman scattering as 2Delta_0 we found that the reduced gap value (2Delta_0/k_BT_c) strongly decreases with increasing doping. The behavior of the low frequency scattering for the B_1g and B_2g scattering components is similar for optimally doped and overdoped crystals and can be described by a w^3 - and w -law, respectively, which is consistent with a d-wave symmetry of the order parameter. In contrast to the optimally doped Tl-2201 in both, moderately and strongly overdoped Tl-2201, the relative (compared to the B_1g) intensity of the A_1g scattering component is suppressed. We suggest that the van Hove singularity is responsible for the observed changes of Raman intensity and reduced gap value with doping. Electronic Raman scattering in the normal state is discussed in the context of the scattering from impurities and compared to the existing infrared data. The scattering rate evaluated from the Raman measurements is smaller for the overdoped samples, compared to the moderately overdoped samples.Comment: 7 pages, 7 figure

Interface states in junctions of two semiconductors with intersecting dispersion curves

A novel type of shallow interface state in junctions of two semiconductors without band inversion is identified within the envelope function approximation, using the two-band model. It occurs in abrupt junctions when the interband velocity matrix elements of the two semiconductors differ and the bulk dispersion curves intersect. The in-plane dispersion of the interface state is found to be confined to a finite range of momenta centered around the point of intersection. These states turn out to exist also in graded junctions, with essentially the same properties as in the abrupt case.Comment: 1 figur

Planar Heterostructure Graphene -- Narrow-Gap Semiconductor -- Graphene

We investigate a planar heterostructure composed of two graphene films separated by a narrow-gap semiconductor ribbon. We show that there is no the Klein paradox when the Dirac points of the Brillouin zone of graphene are in a band gap of a narrow-gap semiconductor. There is the energy range depending on an angle of incidence, in which the above-barrier damped solution exists. Therefore, this heterostructure is a "filter" transmitting particles in a certain range of angles of incidence upon a potential barrier. We discuss the possibility of an application of this heterostructure as a "switch".Comment: 9 pages, 2 figure