Conductance oscillations and zero-bias anomaly in a single superconducting junction to a three-dimensional Bi2Te3Bi_2Te_3 topological insulator

We experimentally investigate Andreev transport through a single junction between an s-wave indium superconductor and a thick film of a three-dimensional $Bi_2Te_3$ topological insulator. We study $Bi_2Te_3$ samples with different bulk and surface characteristics, where the presence of a topological surface state is confirmed by direct ARPES measurements. All the junctions demonstrate Andreev transport within the superconducting gap. For junctions with transparent $In-Bi_2Te_3$ interfaces we find a number of nearly periodic conductance oscillations, which are accompanied by zero-bias conductance anomaly. Both effects disappear above the superconducting transition or for resistive junctions. We propose a consistent interpretation of both effects as originating from proximity-induced superconducting correlations within the $Bi_2Te_3$ topological surface state

Linear and nonlinear optical properties of trigonal borate crystals K7MIn2-xYbx(B5O10)3 (M = Ca, Sr, Ba; x=0…2) with isolated B5O10 units

Noncentrosymmetric borates K7MIn2−xYbx(B5O10)3 (M = Ca, Sr, Ba; x = 0…2) were synthesized by the solid state reaction and the crystals were successfully grown by the top seeded solution growth method using the K2O-B2O3-MF2 flux. According to Rietveld refinement, the crystal structure belongs to the noncentrosymmetric R32 space group. Also, the octahedrally coordinated In atoms are located at wide ranges ∼8 Å which may be promising for phosphor and laser applications. Samples with ytterbium show a characteristic emission band in the range of 950–1050 nm related to the 2F5/2 → 2F7/2 transition of Yb3+ ions that is commonly used for laser generation. IR, Raman and absorption spectra were obtained for the samples as well. The short cut edge of UV absorption, SHG intensity comparable with KDP and low concentration quenching of luminescence suggest that the K7MIn2−xYbx(B5O10)3 borates are promising self-frequency doubling materials

Optical rectification and down-conversion of fs pulses into mid-IR and THz range in GaSe1-xSx

Design of top S-doped GaSe growth technology is completed. New methods for characterization of high optical quality crystals are proposed that allowed selection optimally doped crystals. Frequency conversion of fs pulses into 6.5–35 μm and into 0.2–4.5 THz is realized. S-doped crystals demonstrated advantages from 50–70% in the first experiments up to 8.5–15 times in the following experiments depending on experimental conditions. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only

Termination-dependent surface properties in the giant-Rashba semiconductors BiTeX (X = Cl, Br, I)

The non-centrosymmetric semiconductors BiTeX (X = Cl, Br, I) show large Rashba-type spin-orbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single crystal surfaces usually consist of stacking-fault-induced domains of Te and I terminations implying a spatially inhomogeneous electronic structure. Here we combine scanning tunneling microscopy (STM), photoelectron spectroscopy (ARPES, XPS) and density functional theory (DFT) calculations to systematically investigate the structural and electronic properties of BiTeX(0001) surfaces. For X = Cl, Br we observe macroscopic single-terminated surfaces. We discuss chemical characteristics among the three materials in terms of bonding character, surface electronic structure, and surface morphology.Comment: 12 pages, 5 figure