Production and antioxidative activity of alcoholic beverages made from Thai ou yeast and black rice (Oryza sativa var. Indica cv. Shiun)

Fermentation yeast was isolated from a Thai traditional alcoholic beverage called Thai ou, which is drunk through bamboo tubes. The isolated yeast was identified as a strain of the genus Saccharomyces cerevisiae. The alcoholic beverage made with the isolated yeast designated as S. cerevisiae NP01 from black rice grains had an ethanol concentration of 12.4 to 13.1% (v/v) and a large amount of phenolic compounds. The resulting alcoholic beverages made from black rice grains were red in color, especially those made from uncooked black rice, which had a brilliant red hue similar to that of red or rosé wine. The amount of anthocyanin in the beverages made from uncooked black rice with NP01 and industrial wine yeast W-4 was 118 and 131 μg/ml, respectively. The anthocyanin content of beverages made from uncooked black rice was higher than that of the beverages made from the cooked black rice. The antioxidative activity of alcoholic beverages made from uncooked black rice was also higher than that of beverages made from cooked black rice. In the course of this study, the use of NP01 yeast produced black rice wine that was red in color and exhibited antioxidative activity.Key words: Antioxidative activity, ou, black rice, anthocyanin, alcoholic beverage

Picosecond Nonlinear Relaxation of Photoinjected Carriers in a Single GaAs/AlGaAs Quantum Dot

Photoemission from a single self-organized GaAs/AlGaAs quantum dot (QD) is temporally resolved with picosecond time resolution. The emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Quantitative agreement is found between the experimental data and the calculation based on a model which characterizes the successive relaxation of multiexcitons. Through the analysis we can determine the carrier relaxation time as a function of population of photoinjected carriers. Enhancement of the intra-dot carrier relaxation is demonstrated to be due to the carrier-carrier scattering inside a single QD.Comment: 4 pages, 4 figures, to be published in Phys. Rev. B, Rapid

Bunching visibility for correlated photons from single GaAs quantum dots

We study photon bunching phenomena associated with biexciton-exciton cascade in single GaAs self-assembled quantum dots. Experiments carried out with a pulsed excitation source show that significant bunching is only detectable at very low excitation, where the typical intensity of photon streams is less than the half of their saturation value. Our findings are qualitatively understood with a model which accounts for Poissonian statistics in the number of excitons, predicting the height of a bunching peak being determined by the inverse of probability of finding more than one exciton.Comment: 6 pages, 6 figs to appear in Phys. Rev.

Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background

Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350°C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200°C-capped sample

Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures

Structure of the Ga-stabilized GaAs(001)-c(8x2) surface has been studied using rocking-curve analysis of reflection high-energy electron diffraction (RHEED). The c(8x2) structure emerges at temperatures higher than 600C, but is unstable with respect to the change to the (2x6)/(3x6) structure at lower temperatures. Our RHEED rocking-curve analysis at high temperatures revealed that the c(8x2) surface has the structure which is basically the same as that recently proposed by Kumpf et al. [Phys. Rev. Lett. 86, 3586 (2001)]. We found that the surface atomic configurations are locally fluctuated at high temperatures without disturbing the c(8x2) periodicity.Comment: 14 pages, 4 figures, 1 tabl

Micro-photoluminescence of GaAs/AlGaAs triple concentric quantum rings

A systematic optical study, including micro, ensemble and time resolved photoluminescence of GaAs/AlGaAs triple concentric quantum rings, self-assembled via droplet epitaxy, is presented. Clear emission from localized states belonging to the ring structures is reported. The triple rings show a fast decay dynamics, around 40 ps, which is expected to be useful for ultrafast optical switching applications

Intravenous immunoglobulin contributes to the control of antimelanoma differentiation-associated protein 5 antibody-associated dermatomyositis with palmar violaceous macules/papules

Autoantibodies to melanoma differentiation-associated protein 5 (MDA5) are associated with a subset of patients with dermatomyositis (DM) who have rapidly progressive interstitial lung disease (RP-ILD) with poor prognosis. Intensive immunosuppressive therapy is initiated before irreversible lung damage can occur; however, there are few lines of evidence for the treatment of RP-ILD. Here, we report three cases of anti-MDA5 antibody-associated DM with RP-ILD in which the patients were treated with combined-modality therapy, including high-dose prednisolone, tacrolimus, intravenous cyclophosphamide and intravenous immunoglobulin (IVIG). In all three cases, serum ferritin levels, which are known to represent the disease activity of RP-ILD, were decreased after IVIG administration. IVIG might contribute to the control of the disease activity of anti-MDA5 antibody-positive DM. Moreover, palmar violaceous macules/papules around the interphalangeal joints, which was observed in all three cases in the incipient stage, might be a useful sign in suggesting a diagnosis of anti-MDA5 antibody-associated DM

Correlating the nanostructure and electronic properties of InAs nanowires

The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ~4X larger in the nominally defect-free segments of the wire. We also find that dark field optical intensity is correlated with the mobility, suggesting a simple route for selecting wires with a low defect density. At low temperatures, FETs fabricated on high defect density segments of InAs nanowires showed transport properties consistent with single electron charging, even on devices with low resistance ohmic contacts. The charging energies obtained suggest quantum dot formation at defects in the wires. These results reinforce the importance of controlling the defect density in order to produce high quality electrical and optical devices using InAs nanowires.Comment: Related papers at http://pettagroup.princeton.ed