704 research outputs found

    Bounds on changes in Ritz values for a perturbed invariant subspace of a Hermitian matrix

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    The Rayleigh-Ritz method is widely used for eigenvalue approximation. Given a matrix XX with columns that form an orthonormal basis for a subspace \X, and a Hermitian matrix AA, the eigenvalues of XHAXX^HAX are called Ritz values of AA with respect to \X. If the subspace \X is AA-invariant then the Ritz values are some of the eigenvalues of AA. If the AA-invariant subspace \X is perturbed to give rise to another subspace \Y, then the vector of absolute values of changes in Ritz values of AA represents the absolute eigenvalue approximation error using \Y. We bound the error in terms of principal angles between \X and \Y. We capitalize on ideas from a recent paper [DOI: 10.1137/060649070] by A. Knyazev and M. Argentati, where the vector of absolute values of differences between Ritz values for subspaces \X and \Y was weakly (sub-)majorized by a constant times the sine of the vector of principal angles between \X and \Y, the constant being the spread of the spectrum of AA. In that result no assumption was made on either subspace being AA-invariant. It was conjectured there that if one of the trial subspaces is AA-invariant then an analogous weak majorization bound should only involve terms of the order of sine squared. Here we confirm this conjecture. Specifically we prove that the absolute eigenvalue error is weakly majorized by a constant times the sine squared of the vector of principal angles between the subspaces \X and \Y, where the constant is proportional to the spread of the spectrum of AA. For many practical cases we show that the proportionality factor is simply one, and that this bound is sharp. For the general case we can only prove the result with a slightly larger constant, which we believe is artificial.Comment: 12 pages. Accepted to SIAM Journal on Matrix Analysis and Applications (SIMAX

    Renormalization of hole-hole interaction at decreasing Drude conductivity

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    The diffusion contribution of the hole-hole interaction to the conductivity is analyzed in gated GaAs/Inx_xGa1x_{1-x}As/GaAs heterostructures. We show that the change of the interaction correction to the conductivity with the decreasing Drude conductivity results both from the compensation of the singlet and triplet channels and from the arising prefactor αi<1\alpha_i<1 in the conventional expression for the interaction correction.Comment: 6 pages, 5 figure

    Introductory Remarks from the Guest Editors

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    Electric fields in plasmas under pulsed currents

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    Electric fields in a plasma that conducts a high-current pulse are measured as a function of time and space. The experiment is performed using a coaxial configuration, in which a current rising to 160 kA in 100 ns is conducted through a plasma that prefills the region between two coaxial electrodes. The electric field is determined using laser spectroscopy and line-shape analysis. Plasma doping allows for 3D spatially resolved measurements. The measured peak magnitude and propagation velocity of the electric field is found to match those of the Hall electric field, inferred from the magnetic-field front propagation measured previously.Comment: 13 pages, 13 figures, submitted to PR

    Investigation of spherical and cylindrical Luneburg lens antennas by Green's function method

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    Luneburg lens antenna radiation fields are calculated with Green's functions of spherical and cylindrical layered structures. Electric field components for Luneburg lenses excited by a linear and circular polarized antenna are analyzed. Co-polarized and cross-polarized field radiation patterns are shown. Reflection from the lens, losses in the lens material, spillover and polarization loss are taken into account for antenna gain calculation. The proposed method significantly reduces computing time for multilayered lens in comparison with the most commonly used in antenna design. © 2015 Radio Society (Mauritius)

    Spin-splitting in the quantum Hall effect of disordered GaAs layers with strong overlap of the spin subbands

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    With minima in the diagonal conductance G_{xx} and in the absolute value of the derivative |dG_{xy}/dB| at the Hall conductance value G_{xy}=e^{2}/h, spin-splitting is observed in the quantum Hall effect of heavily Si-doped GaAs layers with low electron mobility 2000 cm^2/Vs in spite of the fact that the spin-splitting is much smaller than the level broadening. Experimental results can be explained in the frame of the scaling theory of the quantum Hall effect, applied independently to each of the two spin subbands.Comment: 4 pages, 4 figure
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