In-Plane Magnetolumnescence of Modulation-Doped GaAs/AlGaAs Coupled Double Quantum Wells

In-plane magnetic field photoluminescence spectra from a series of GaAs/AlGaAs coupled double quantum wells show distinctive doublet structures related to the symmetric and antisymmetric states. The magnetic field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In lower mobility samples, the transition energy shows an $\cal N$-type kink with fields (namely a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is due to a homogeneous broadening of electron and hole states and the results are in good agreement with theoretical calculations.Comment: 3 pages, 4 figures, submitted to Appl. Phys. Let

Giant supercurrent states in a superconductor-InAs/GaSb-superconductor junction

Superconductivity in topological materials has attracted a great deal of interest in both electron physics and material sciences since the theoretical predictions that Majorana fermions can be realized in topological superconductors [1-4]. Topological superconductivity could be realized in a type II, band-inverted, InAs/GaSb quantum well if it is in proximity to a conventional superconductor. Here we report observations of the proximity effect induced giant supercurrent states in an InAs/GaSb bilayer system that is sandwiched between two superconducting tantalum electrodes to form a superconductor-InAs/GaSb-superconductor junction. Electron transport results show that the supercurrent states can be preserved in a surprisingly large temperature-magnetic field (T-H) parameter space. In addition, the evolution of differential resistance in T and H reveals an interesting superconducting gap structure

Complete quantum control of exciton qubits bound to isoelectronic centres

In recent years, impressive demonstrations related to quantum information processing have been realized. The scalability of quantum interactions between arbitrary qubits within an array remains however a significant hurdle to the practical realization of a quantum computer. Among the proposed ideas to achieve fully scalable quantum processing, the use of photons is appealing because they can mediate long-range quantum interactions and could serve as buses to build quantum networks. Quantum dots or nitrogen-vacancy centres in diamond can be coupled to light, but the former system lacks optical homogeneity while the latter suffers from a low dipole moment, rendering their large-scale interconnection challenging. Here, through the complete quantum control of exciton qubits, we demonstrate that nitrogen isoelectronic centres in GaAs combine both the uniformity and predictability of atomic defects and the dipole moment of semiconductor quantum dots. This establishes isoelectronic centres as a promising platform for quantum information processing

Near-field probing of strong light-matter coupling in single IR antennae

Quantum well intersubband polaritons are traditionally studied in large scale systems, over many wavelengths in size. In this presentation, we demonstrate that it is possible to detect and investigate intersubband polaritons in a single subwavelength nanoantenna in the IR frequency range. We observe polariton formation using a scattering-type near-field microscope and nano-FTIR spectroscopy. We will discuss near-field spectroscopic signatures of plasmonic antennae with and without coupling to the intersubband transition in quantum wells located underneath the antenna. Evanescent field amplitude spectra recorded on the antenna surface show a mode anti-crossing behavior in the strong coupling case. We also observe a corresponding strong-coupling signature in the phase of the detected field. We anticipate that this near-field approach will enable explorations of strong and ultrastrong light-matter coupling in the single nanoantenna regime, including investigations of the elusive effect of ISB polariton condensation

Observation of the superconducting proximity effect in Nb/InAs and NbNx/InAs by Raman scattering

URL:http://link.aps.org/doi/10.1103/PhysRevB.66.134530 DOI:10.1103/PhysRevB.66.134530High-quality thin Nb and NbN films (60-100 Å) are grown on (100) n+-InAs (n=1019cm-3) substrates by dc-magnetron sputter deposition. Studies of the electronic properties of interfaces between the superconductor and the semiconductor are done by Raman scattering measurements. The superconducting proximity effect at superconductor-semiconductor interfaces is observed through its impact on inelastic light scattering intensities originating from the near-interface region of InAs. The InAs longitudinal optical phonon LO mode (237cm-1) and the plasmon-phonon coupled modes L- (221cm-1) and L+ (1100 to 1350cm-1), for n+=1×1019-2×1019cm-3 are measured. The intensity ratio of the LO mode (associated with the near-surface charge accumulation region, in InAs) to that of the L- mode (associated with bulk InAs), is observed to increase by up to 40% below the superconducting transition temperature. This temperature-dependent change in light scattering properties is only observed with high quality superconducting films and when the superconductor and the semiconductor are in good electrical contact. A few possible mechanisms of the observed effect are proposed.We gratefully acknowledge support from the United States Department of Energy through Materials Research Laboratory~Grant No. DEFG02-96ER45439! ~I.V.R., A.C.A., L.H.G., T.A.T., J.F.D., P.W.B., J.F.K.!, and from the United States Department of Energy through Midwest Superconductivity Consortium ~MISCON! ~Grant No. DE FG02-90ER45427! and the NSF ~Grant No. DMR 96-23827! ~S.W.H., P.F.M.!. SEM, XRD, XPS, and RBS materials characterizations were performed at the Center for Microanalysis of Materials and Microfabrication Center at Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana- Champaign ~Grant No. DE FG02-96ER45439!. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin company, for the United States Department of Energy under Contract No. DE-AC04-94AL85000

Patient reported cosmetic outcome after vacuum assisted excision of benign breast lesions:a cross-sectional study

OBJECTIVE: Better cosmetic outcome after vacuum assisted excision (VAE) compared to surgical excision of benign breast lesions is suggested in previous studies but has never been evaluated with validated outcome measures. In this study, patient reported cosmetic outcome after VAE was evaluated. METHODS: Patients who underwent VAE between July 2017 and December 2018 were invited to complete the cosmetic subscale of the Dutch Breast Cancer Treatment Outcome Scale, comparing the treated with the untreated breast. Response mode ranged from 1 (no difference) to 4 (large difference) and cosmetic outcome was calculated as the unweighted mean. Clinical outcomes included: tumor size, number of cores, complications, residual lesions and recurrences. RESULTS: Response rate was 73.4% (47 of 64 patients). Median tumor size was 15 mm (range 5-51 mm) and median number of cores 6.5 (range 1-85), complete excision was confirmed in all but two patients. Mean cosmetic outcome was good (mean score ≤1.75) in 74% of patients and no patients reported a poor cosmetic outcome (mean score >3.25). A hematoma occurred in five patients (one needed aspiration) and a skin rash in one patient, no patients developed an infection or seroma. CONCLUSION: In this study VAE is safe and effective for tumors up to 5 cm and patient reported cosmetic outcome was good. Patients with benign lesions could benefit from VAE as an alternative for surgical excision. ADVANCES IN KNOWLEDGE: A formal quantitative measurement of cosmetic outcome after vacuum assisted excision for benign breast lesions was still lacking. This study shows that this cosmetic outcome is overall good in benign lesions up to 5 cm

Photoluminescence studies of modulation doped coupled double quantum wells in magnetic fields

We have studied the photoluminescence spectra of a series of mudulation doped couple double quantum well structures in parallel and perpendicular magnetic fields to 62 tesla at 4K and 77K, for B{parallel}a, the spectra display distinct Landau level transitions which show anti-crossing with the e1-hh1 exciton. At high fields, the lowest conduction band-valence exciton approaches the extrapolated 0- 0 Landau level. About 25 Tesla, there is valence band mixing of the e1-lh1, e1-hh2, e1-hh1 transitions. The spectral peaks display a diamagnetic shift in low in-plane magnetic fields which become linear in high fields. At magnetic fields beyond 40T, spin splitting is observed for both B{parallel}z and B{perpendicular} geometries. The partial energy gap discovered in conductance measurements in in-plane fields was not conclusively observed using photoluminescence spectroscopy, although anomalies in the energy dependence of the lowest level with magnetic field were evident at similar field values