Josephson parametric reflection amplifier with integrated directionality

A directional superconducting parametric amplifier in the GHz frequency range is designed and analyzed, suitable for low-power read-out of microwave kinetic inductance detectors employed in astrophysics and when combined with a nonreciprocal device at its input also for circuit quantum electrodynamics (cQED). It consists of an one wavelength long nondegenerate Josephson parametric reflection amplifier circuit. The device has two Josephson junction oscillators, connected via a tailored impedance to an on-chip passive circuit which directs the in- to the output port. The amplifier provides a gain of 20 dB over a bandwidth of 220 MHz on the signal as well as on the idler portion of the amplified input and the total photon shot noise referred to the input corresponds to maximally 1.3 photons per second per Hertz of bandwidth. We predict a factor of four increase in dynamic range compared to conventional Josephson parametric amplifiers.Comment: Main article (5 pages plus 2 pages references) plus supplemental material (14 pages

Engineering physics of superconducting hot-electron bolometer mixers

Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good quality superconductor-insulator-superconductor (SIS) devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal metal-superconductor bilayer, connected to a thin film of a narrow, short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local- oscillator power. Despite this technological simplicity its operation has been found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge conversion resistance occurring at an normal-metal-superconductor interface and a resistance due to time- dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a non-uniform superconducting environment set up by the bias-conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy-relaxation rate. Meanwhile several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments.Comment: This is an author-processed copy of an Invited contribution to the Special Issue of the IEEE Transactions on Terahertz Science and Technology dedicated to the 28th IEEE International Symposium on Space Terahertz Technology (ISSTT2017

Glass Transition in a Two-Dimensional Electron System in Silicon in a Parallel Magnetic Field

Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional electron system (2DES) in Si in the vicinity of the metal-insulator transition (MIT) persists in parallel magnetic fields B of up to 9 T. At low B, both the glass transition density $n_g$ and $n_c$, the critical density for the MIT, increase with B such that the width of the metallic glass phase ($n_c<n_s<n_g$) increases with B. At higher B, where the 2DES is spin polarized, $n_c$ and $n_g$ no longer depend on B. Our results demonstrate that charge, as opposed to spin, degrees of freedom are responsible for glassy ordering of the 2DES near the MIT.Comment: 4 pages, 5 figure

Metal-insulator transition and glassy behavior in two-dimensional electron systems

Studies of low-frequency resistance noise demonstrate that glassy freezing occurs in a two-dimensional electron system in silicon in the vicinity of the metal-insulator transition (MIT). The width of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility (low-disorder) samples. The glass transition is manifested by a sudden and dramatic slowing down of the electron dynamics, and by a very abrupt change to the sort of statistics characteristic of complicated multistate systems. In particular, the behavior of the second spectrum, an important fourth-order noise statistic, indicates the presence of long-range correlations between fluctuators in the glassy phase, consistent with the hierarchical picture of glassy dynamics.Comment: Contribution to conference on "Noise as a tool for studying materials" (SPIE), Santa Fe, New Mexico, June 2003; 15 pages, 12 figs. (includes some low-quality figs; send e-mail to get high-quality figs.

Population dynamics of free-swimming Annelida in four Dutch wastewater treatment plants in relation to process characteristics

Free-swimming Annelida occasionally occur in very high densities in WWTPs (WasteWater Treatment Plants) and are nowadays applied for waste sludge reduction, but their growth is uncontrollable. In order to get more insight in the population dynamics of these free-swimming Annelida, and relate their presence to process characteristics, nine ATs (Aeration Tanks) of four Dutch WWTPs were regularly sampled over a 2.5-year period. For each species, peak periods in worm population growth were defined and population doubling times and half-lives calculated. Peak periods and doubling times were compared to those in natural systems. Process characteristics were obtained from the plant operators and related to the worm populations by multivariate analysis for the first time in large-scale WWTPs. The species composition in the WWTPs was limited and the most abundant free-swimming Annelida were in decreasing order Nais spp., Aeolosoma hemprichi, Pristina aequiseta, Aeolosoma variegatum, Chaetogaster diastrophus, and Aeolosoma tenebrarum.This latter species had never been found before in WWTPs. Worm absence sometimes coincided with the presence of anoxic zones, but this was possibly overcome by higher temperatures in the WWTPs. Worms were present all year round, even in winter, but no yearly recurrences of population peaks were observed, probably as a result of stable food supply and temperature, and the lack of predation in the WWTPs. Peak periods were similar between the ATs of each WWTP. The duration of the peak periods was on average 2¿3 months for each species and the population doubling times in the peak periods were short (on average 2¿6 days), which also corresponds to a stable favorable environment. The disappearance of worm populations from the WWTPs was presumably caused by declining asexual reproduction and subsequent removal with the waste sludge. Multivariate analysis indicated that 36% of the variability in worm populations was due to spatial and temporal patterns only. In addition, no more than 4% of the variability in worm populations was related to variations in process characteristics only and worm presence was usually associated with better sludge settleability. In conclusion, our data from large-scale WWTPs suggest that growth of free-swimming Annelida still seems uncontrollable and that their effects on treatment processes are unclear, which makes stable application in wastewater treatment for sludge reduction difficult

Possible Indications of Electronic Inhomogeneities in Superconducting Nanowire Detectors

The voltage-carrying state of superconducting NbTiN nanowires, used for single-photon detectors, is analyzed. Upon lowering the current, the wire returns to the superconducting state in a steplike pattern, which differs from sample to sample. Elimination of geometrical inhomogeneities, such as sharp corners, does not remove these steplike features. They appear to be intrinsic to the material. Since the material is strongly disordered, electronic inhomogeneities are considered as a possible cause. A thermal model, taking into account random variations of the electronic properties along the wire, is used as an interpretative framework.Comment: Applied Superconductivity Conference (ASC'12

Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field

A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a magnetic field. We show explicitly and quantitatively that a magnetic field applied parallel to the plane of the electrons reduces the slope of the conductivity versus temperature curves to near zero over a broad range of electron densities extending from $n_c$ to deep in the metallic regime where the high field conductivity is on the order of $10 e^2/h$. The strong suppression (or "quenching") of the metallic behavior by a magnetic field sets an important constraint on theory.Comment: 4 pages, 4 figure