Thickness-dependent Electrical and Piezoelectric Properties of Lead-Free Ferroelectric Ba[0.8]Sr[0.2]TiO[3] Thin Films

The thickness dependent of electrical and piezoelectric properties of lead-free ferroelectric Ba[0.8]Sr[0.2]TiO[3] thin films is reported. Ba[0.8]Sr[0.2]TiO[3] (BST 80/20) thin films for various thickness, ranging from 150 nm to 550 nm, were prepared by high-frequency reactive sputtering of a ceramic target in an oxygen atmosphere on p-type Si substrate. Memory windows and effective dielectric constant of the BST film in Au/BST/Si thin film capacitors is found to increase with the increasing thickness of the film. Domain structure, domain switching and hysteresis loops of the BST 80/20 thin film were investigate via the piezoresponse force microscopy. Complete domain switching and strong piezoresponse are found in the ferroelectric BST film. The piezoelectric coefficient and the remnant piezoelectric response (ΔPR) of BST 80/20 films is found to increase with the thickness of the fil

Lanthanum-Gallium Tantalate Crystals and their Electrophysical Characterization

Lanthanum-gallium tantalate single crystal (La3Ta0.5Ga5.5O14, langatate, LGT) is a perspective piezoe-lectric material as an active component of pressure sensors. An investigation of the growth conditions in-fluence (the growth atmosphere) on the electrophysical сharacterization of LGT, obtained in different at-mospheres (Ar, Ar + O2) was carried out. The frequency dependences of the relative dielectric constant (ε11/ε0) and of the admittance depend on the growth atmosphere. The langatate electrophysical сharacteri-zation in alternating electric fields were analyzed by means of the impedance spectr oscopy method. The behavior of short circuit currents in specimens of polar cuts of LGT single crystals with the same material electrodes without preliminary polarization is described. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3628

Piezoelectric Characteristics of LiNbO3 Thin-film Heterostructures via Piezoresponse Force Microscopy

Electro-optic LiNbO3 thin films were deposited on Si(100) and Si(111) substrates using a radio-frequency magnetron sputtering process. The piezoelectric properties of the LiNbO3 films were investigated using the scanning probe microscopy in the piezoresponse mode. The obtained results show the high degree of grains orientation in polycrystalline structure. The piezoelectric modulus (dzz) was estimated to be 16 pm/V (for LiNbO3 / Si(100)) and 22 pm/V (for LiNbO3 / Si(111)) and the polarization about of 0.37 C·m – 2. These values are larger than those reported previously for LiNbO3 films. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3366

Formation of the Electric Field Distribution in Thin Electro-Optic Layers for Precision Correction their Optical Characteristics

A method of making given field distribution within thin electro-optical layers by using narrow band electrodes placed at the same electric potential. A formula for electric field intensity produced by a single band electrode is obtained. Electric field modeling for different band electrode configurations is undertaken. It was shown, by applying piezoresponse force microscopy, that in case of highly inhomogeneous field the polarization of lithium niobate electro-optical film persisted only in the area above the band electrode. Lithium niobate, electro-optical structures, piezoresponse force microscopy, Computer simulation

Superradiation from Crystals of High-Spin Molecular Nanomagnets

Phenomenological theory of superradiation from crystals of high-spin molecules is suggested. We show that radiation friction can cause a superradiation pulse and investigate the role of magnetic anisotropy, external magnetic field and dipole-dipole interactions. Depending on the contribution of all these factors at low temperature, several regimes of magnetization of crystal sample are described. Very fast switch of magnetization's direction for some sets of parameters is predicted.Comment: 10 pages, 3 figure

Synthesis and Nanoscale Characterization of LiNbO3 Thin Films Deposited on Al2O3 Substrate by RF Magnetron Sputtering under Electric Field

LiNbO3 thin films were deposited on Al2O3 substrates by RF-magnetron sputtering with in-situ electric field to study the self-polarization effect. The films have been characterized crystallographically by x-ray diffraction, and morphologically by atomic force microscopy. The films contain crystallites of LiNbO3 with preferable orientation [012] along the normal to the Al2O3 substrate surface (012). Piezoresponse force microscopy was used to study vertical and lateral polarization direction in LiNbO3 thin films. The analysis of the histograms of vertical piezoresponse images allowed to reveal self-polarization effect in films. The local piezoelectric hysteresis performed on the nanometer scale indicates switching behavior of polarization for LiNbO3 thin film

Formation of the Electric Field Distribution in Thin Electro-Optic Layers for Precision Correction their Optical Characteristics

A method of making given field distribution within thin electro-optical layers by using narrow band electrodes placed at the same electric potential. A formula for electric field intensity produced by a single band electrode is obtained. Electric field modeling for different band electrode configurations is undertaken. It was shown, by applying piezoresponse force microscopy, that in case of highly inhomogeneous field the polarization of lithium niobate electro-optical film persisted only in the area above the band electrode. Lithium niobate, electro-optical structures, piezoresponse force microscopy, Computer simulation

Interior of a Schwarzschild black hole revisited

The Schwarzschild solution has played a fundamental conceptual role in general relativity, and beyond, for instance, regarding event horizons, spacetime singularities and aspects of quantum field theory in curved spacetimes. However, one still encounters the existence of misconceptions and a certain ambiguity inherent in the Schwarzschild solution in the literature. By taking into account the point of view of an observer in the interior of the event horizon, one verifies that new conceptual difficulties arise. In this work, besides providing a very brief pedagogical review, we further analyze the interior Schwarzschild black hole solution. Firstly, by deducing the interior metric by considering time-dependent metric coefficients, the interior region is analyzed without the prejudices inherited from the exterior geometry. We also pay close attention to several respective cosmological interpretations, and briefly address some of the difficulties associated to spacetime singularities. Secondly, we deduce the conserved quantities of null and timelike geodesics, and discuss several particular cases in some detail. Thirdly, we examine the Eddington-Finkelstein and Kruskal coordinates directly from the interior solution. In concluding, it is important to emphasize that the interior structure of realistic black holes has not been satisfactorily determined, and is still open to considerable debate.Comment: 15 pages, 7 figures, Revtex4. V2: Version to appear in Foundations of Physic

Formation of the Microcrystalline Structure in LiNbO3 Thin Films by Pulsed Light Annealing

LiNbO3 thin films with a thickness of 200 nm were deposited onto Al2O3 substrate by RF-magnetron sputtering technique without intentional substrate heating. The results demonstrate that post-growth infrared pulsed light annealing of the amorphous LiNbO3 films leads to the formation of two phases, LiNbO3 and LiNb3O8. After annealing at temperatures of 700 to 800 °C, the percentage of the nonferroelectric phase LiNb3O8 was minimal. The surface composition of the films annealed at different temperatures was examined by X-ray photoelectron spectroscopy. Piezoresponse force microscopy was used to study both the vertical and the lateral polarization and to visualize the piezoelectric inactivity of LiNb3O8 grains. A comparison of the results of PFM and XPS measurements revealed that there is a correlation between the fraction of the piezoelectric phase and the film composition: At an annealing temperature higher than 850 °C, the atomic ratio of lithium to niobium decreases compared to the initial value along with a decrease of the fraction of the piezoelectric phase