Mechanically-tunable bandgap closing in 2D graphene phononic crystals

We present a tunable phononic crystal which can be switched from a mechanically insulating to a mechanically conductive (transmissive) state. Specifically, in our simulations for a phononic lattice under biaxial tension (σxx = σyy = 0.01 N m−1), we find a bandgap for out-of-plane phonons in the range of 48.8–56.4 MHz, which we can close by increasing the degree of tension uniaxiality (σxx/σyy) to 1.7. To manipulate the tension distribution, we design a realistic device of finite size, where σxx/σyy is tuned by applying a gate voltage to a phononic crystal made from suspended graphene. We show that the bandgap closing can be probed via acoustic transmission measurements and that the phononic bandgap persists even after the inclusion of surface contaminants and random tension variations present in realistic devices. The proposed system acts as a transistor for MHz-phonons with an on/off ratio of 105 (100 dB suppression) and is thus a valuable extension for phonon logic applications. In addition, the transition from conductive to isolating can be seen as a mechanical analogue to a metal-insulator transition and allows tunable coupling between mechanical entities (e.g. mechanical qubits)

Dynamics and efficient conversion of excitons to trions in non-uniformly strained monolayer WS2

In recent years, there has been ongoing effort in achieving efficient transport of excitons in monolayer transition metal dichalcogenides subjected to highly non-uniform strain. Here we investigate the transport of excitons and trions in monolayer semiconductor WS2 subjected to controlled non-uniform mechanical strain. An atomic force microscope (AFM)-based setup is applied to actively control and tune the strain profiles by indenting the monolayer with an AFM tip. Optical spectroscopy is used to reveal the dynamics of the excited carriers. The non-uniform strain configuration locally changes the valence and conduction bands of WS2, giving rise to effective forces attracting excitons and trions towards the point of maximum strain underneath the AFM tip. We observe large changes in the photoluminescence spectra of WS2 under strain, which we interpret using a drift–diffusion model. We show that the transport of neutral excitons, a process that was previously thought to be efficient in non-uniformly strained two-dimensional semiconductors and termed as funnelling, is negligible at room temperature, in contrast to previous observations. Conversely, we discover that redistribution of free carriers under non-uniform strain profiles leads to highly efficient conversion of excitons to trions. Conversion efficiency reaches up to about 100% even without electrical gating. Our results explain inconsistencies in previous experiments and pave the way towards new types of optoelectronic devices

Generating intense electric fields in 2D materials by dual ionic gating

The application of an electric field through two-dimensional materials (2DMs) modifies their properties. For example, a bandgap opens in semimetallic bilayer graphene while the bandgap shrinks in few-layer 2D semiconductors. The maximum electric field strength achievable in conventional devices is limited to ≤0.3 V/nm by the dielectric breakdown of gate dielectrics. Here, we overcome this limit by suspending a 2DM between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below it, producing an intense electric field larger than 4 V/nm. This field is strong enough to close the bandgap of few-layer WSe2, thereby driving a semiconductor-to-metal transition. The ability to apply fields an order of magnitude higher than what is possible in dielectric-gated devices grants access to previously-inaccessible phenomena occurring in intense electric fields

Neutral and charged excitons interplay in non-uniformly strain-engineered WS2

We investigate the response of excitons in two-dimensional semiconductors to nonuniformity of mechanical strain. In our approach to non-uniform strain-engineering, a WS2 monolayer is suspended over a triangular hole. Large (>2%), strongly non-uniform (>0.28% µm–1), and in-situ tunable strain is induced in WS2 by pressurizing it with inert gas. We observe a pronounced shift of the spectral weight from neutral to charged excitons at the center of the membrane, in addition to well-known strain-dependent bandgap modification. We show that the former phenomenon is a signature of a new effect unique for non-uniform strain: funneling of free carriers towards the region of high strain followed by neutral to charged exciton conversion. Our result establishes non-uniform strain engineering as a novel and useful experimental 'knob' for tuning optoelectronic properties of 2D semiconductors

Towards tunable graphene phononic crystals

Phononic crystals (PnCs) are artificially patterned media exhibiting bands of allowed and forbidden zones for phonons—in analogy to the electronic band structure of crystalline solids arising from the periodic arrangement of atoms. Many emerging applications of PnCs from solid-state simulators to quantum memories could benefit from the on-demand tunability of the phononic band structure. Here, we demonstrate the fabrication of suspended graphene PnCs in which the phononic band structure is controlled by mechanical tension applied electrostatically. We show signatures of a mechanically tunable phononic band gap. The experimental data supported by simulation suggests a phononic band gap at 28–33 MHz in equilibrium, which upshifts by 9 MHz under a mechanical tension of 3.1 N m−1. This is an essential step towards tunable phononics paving the way for more experiments on phononic systems based on 2D materials

The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication

Focused beams of helium ions are a powerful tool for high-fidelity machining with spatial precision below 5 nm. Achieving such a high patterning precision over large areas and for different materials in a reproducible manner, however, is not trivial. Here, we introduce the Python toolbox FIB-o-mat for automated pattern creation and optimization, providing full flexibility to accomplish demanding patterning tasks. FIB-o-mat offers high-level pattern creation, enabling high-fidelity large-area patterning and systematic variations in geometry and raster settings. It also offers low-level beam path creation, providing full control over the beam movement and including sophisticated optimization tools. Three applications showcasing the potential of He ion beam nanofabrication for two-dimensional material systems and devices using FIB-o-mat are presented

Strain fingerprinting of exciton valley character in 2D semiconductors

Intervalley excitons with electron and hole wavefunctions residing in different valleys determine the long-range transport and dynamics observed in many semiconductors. However, these excitons with vanishing oscillator strength do not directly couple to light and, hence, remain largely unstudied. Here, we develop a simple nanomechanical technique to control the energy hierarchy of valleys via their contrasting response to mechanical strain. We use our technique to discover previously inaccessible intervalley excitons associated with K, Γ, or Q valleys in prototypical 2D semiconductors WSe2 and WS2. We also demonstrate a new brightening mechanism, rendering an otherwise “dark” intervalley exciton visible via strain-controlled hybridization with an intravalley exciton. Moreover, we classify various localized excitons from their distinct strain response and achieve large tuning of their energy. Overall, our valley engineering approach establishes a new way to identify intervalley excitons and control their interactions in a diverse class of 2D systems

Strain control of hybridization between dark and localized excitons in a 2D semiconductor

Mechanical strain is a powerful tuning knob for excitons, Coulomb-bound electron-hole complexes dominating optical properties of two-dimensional semiconductors. While the strain response of bright free excitons is broadly understood, the behavior of dark free excitons (long-lived excitations that generally do not couple to light due to spin and momentum conservation) or localized excitons related to defects remains mostly unexplored. Here, we develop a technique capable of straining pristine suspended WSe2 kept at cryogenic temperatures up to 3\% to study the strain behavior of these fragile many-body states. We find that under the application of strain, dark and localized excitons in monolayer WSe2 - a prototypical 2D semiconductor - are brought into energetic resonance, forming a new hybrid state that inherits the properties of the constituent species. The characteristics of the hybridized state, including an order-of-magnitude enhanced light/matter coupling, avoided-crossing energy shifts, and strain tunability of many-body interactions, are all supported by first-principles calculations. The hybridized exciton reported here may play a critical role in the operation of single quantum emitters based on WSe2. Furthermore, the techniques we developed may be used to fingerprint unidentified excitonic statesComment: 15 pages, 5 figure

Nanomechanical absorption spectroscopy of 2D materials with femtowatt sensitivity

Nanomechanical spectroscopy (NMS) is a recently developed approach to determine optical absorption spectra of nanoscale materials via mechanical measurements. It is based on measuring changes in the resonance frequency of a membrane resonator vs. the photon energy of incoming light. This method is a direct measurement of absorption, which has practical advantages compared to common optical spectroscopy approaches. In the case of two-dimensional (2D) materials, NMS overcomes limitations inherent to conventional optical methods, such as the complications associated with measurements at high magnetic fields and low temperatures. In this work, we develop a protocol for NMS of 2D materials that yields two orders of magnitude improved sensitivity compared to previous approaches, while being simpler to use. To this end, we use mechanical sample actuation, which simplifies the experiment and provides a reliable calibration for greater accuracy. Additionally, the use of low-stress silicon nitride membranes as our substrate reduces the noise-equivalent power to fW , comparable to commercial semiconductor photodetectors. We use our approach to spectroscopically characterize a 2D transition metal dichalcogenide (WS2), a layered magnetic semiconductor (CrPS4), and a plasmonic super-crystal consisting of gold nanoparticles