RELATIONSHIP BETWEEN BALL IMPACT LOCATION AND JOINT ANGLE CHANGES FOR ONE-HANDED TENNIS BACKHAND GROUNDSTROKES

The purpose of this study was to investigate the effect of off-longitudinal axis and off-lateral axis ball-racket impact locations on racket and lower arm joint angle changes for one-handed tennis backhand ground strokes. Three-dimensional racket and wrist angular kinematic data were recorded for fourteen university tennis players. Off-longitudinal axis ball-racket impact locations explained over 70% of the variation in racket rotation about the longitudinal axis and wrist flexion / extension angles during the period immediately following impad. Off-lateral axis ball-racket impact locations had a less clear cut influence on racket and lower arm rotations. This study has confirmed that off-longitudinal impacts blow the longitudinal axis cause forced wrist flexion and established that there can be large differences in forced wrist flexion from individual to individual

Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than plus or minus 10 deg.) sapphire (0001) substrate can be used to improve epitaxial relationships better by providing attractive atomic steps in the epitaxial process

Silicon germanium semiconductive alloy and method of fabricating same

A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al.sub.2O.sub.3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a orientation of the cubic diamond structure SiGe is aligned with a orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium

Epitaxial Growth of Cubic Crystalline Semiconductor Alloys on Basal Plane of Trigonal or Hexagonal Crystal

Hetero-epitaxial semiconductor materials comprising cubic crystalline semiconductor alloys grown on the basal plane of trigonal and hexagonal substrates, in which misfit dislocations are reduced by approximate lattice matching of the cubic crystal structure to underlying trigonal or hexagonal substrate structure, enabling the development of alloyed semiconductor layers of greater thickness, resulting in a new class of semiconductor materials and corresponding devices, including improved hetero-bipolar and high-electron mobility transistors, and high-mobility thermoelectric devices

The effect of ball impact location on racket and forearm joint angle changes for one-handed tennis backhand groundstrokes

Recreational tennis players tend to have higher incidence of tennis elbow, and this has been hypothesised to be related to one-handed backhand technique and off-centre ball impacts on the racket face. This study aimed to investigate for a range of participants the effect of off-longitudinal axis and off-lateral axis ball-racket impact locations on racket and forearm joint angle changes immediately following impact in one-handed tennis backhand groundstrokes. Three-dimensional racket and wrist angular kinematic data were recorded for fourteen university tennis players each performing thirty ‘flat’ one-handed backhand groundstrokes. Off-longitudinal axis ball-racket impact locations explained over 70% of the variation in racket rotation about the longitudinal axis and wrist flexion / extension angles during the 30 ms immediately following impact. Off-lateral axis ball-racket impact locations had a less clear cut influence on racket and forearm rotations. Specifically off-longitudinal impacts below the longitudinal axis forced the wrist into flexion for all participants with there being between 11º and 32º of forced wrist flexion for an off-longitudinal axis impact that was one ball diameter away from the mid-line. This study has confirmed that off-longitudinal impacts below the longitudinal axis contribute to forced wrist flexion and eccentric stretch of the wrist extensors and there can be large differences in the amount of forced wrist flexion from individual to individual and between strokes with different impact locations

Control Program and Optical Improvements of Fresnel Microspectrometer

A microspectrometer has a circular geometry, and is designed with the Fresnel diffraction equation. This enables a dramatic miniaturization of the optical parts of a spectrometer over 100 times by volume. Therefore, it enables the construction of spectrometer arrays such as 100X100 microspectrometers for tunable multispectral or hyper-spectral imaging. It can be used for a massive, simultaneous spectral scan from multiple optical sources such as 10,000 optical fibers

Power Budget Analysis for High Altitude Airships

The High Altitude Airship (HAA) has various potential applications and mission scenarios that require onboard energy harvesting and power distribution systems. The energy source considered for the HAA s power budget is solar photon energy that allows the use of either photovoltaic (PV) cells or advanced thermoelectric (ATE) converters. Both PV cells and an ATE system utilizing high performance thermoelectric materials were briefly compared to identify the advantages of ATE for HAA applications in this study. The ATE can generate a higher quantity of harvested energy than PV cells by utilizing the cascaded efficiency of a three-staged ATE in a tandem mode configuration. Assuming that each stage of ATE material has the figure of merit of 5, the cascaded efficiency of a three-staged ATE system approaches the overall conversion efficiency greater than 60%. Based on this estimated efficiency, the configuration of a HAA and the power utility modules are defined

Electrostatic Power Generation from Negatively Charged, Simulated Lunar Regolith

Research was conducted to develop an electrostatic power generator for future lunar missions that facilitate the utilization of lunar resources. The lunar surface is known to be negatively charged from the constant bombardment of electrons and protons from the solar wind. The resulting negative electrostatic charge on the dust particles, in the lunar vacuum, causes them to repel each other minimizing the potential. The result is a layer of suspended dust about one meter above the lunar surface. This phenomenon was observed by both Clementine and Surveyor spacecrafts. During the Apollo 17 lunar landing, the charged dust was a major hindrance, as it was attracted to the astronauts' spacesuits, equipment, and the lunar buggies. The dust accumulated on the spacesuits caused reduced visibility for the astronauts, and was unavoidably transported inside the spacecraft where it caused breathing irritation [1]. In the lunar vacuum, the maximum charge on the particles can be extremely high. An article in the journal "Nature", titled "Moon too static for astronauts?" (Feb 2, 2007) estimates that the lunar surface is charged with up to several thousand volts [2]. The electrostatic power generator was devised to alleviate the hazardous effects of negatively charged lunar soil by neutralizing the charged particles through capacitive coupling and thereby simultaneously harnessing power through electric charging [3]. The amount of power generated or collected is dependent on the areal coverage of the device and hovering speed over the lunar soil surface. A thin-film array of capacitors can be continuously charged and sequentially discharged using a time-differentiated trigger discharge process to produce a pulse train of discharge for DC mode output. By controlling the pulse interval, the DC mode power can be modulated for powering devices and equipment. In conjunction with a power storage system, the electrostatic power generator can be a power source for a lunar rover or other systems. The negatively charged lunar soil would also be neutralized mitigating some of the adverse effects resulting from lunar dust

Micro spectrometer for parallel light and method of use

A spectrometer system includes an optical assembly for collimating light, a micro-ring grating assembly having a plurality of coaxially-aligned ring gratings, an aperture device defining an aperture circumscribing a target focal point, and a photon detector. An electro-optical layer of the grating assembly may be electrically connected to an energy supply to change the refractive index of the electro-optical layer. Alternately, the gratings may be electrically connected to the energy supply and energized, e.g., with alternating voltages, to change the refractive index. A data recorder may record the predetermined spectral characteristic. A method of detecting a spectral characteristic of a predetermined wavelength of source light includes generating collimated light using an optical assembly, directing the collimated light onto the micro-ring grating assembly, and selectively energizing the micro-ring grating assembly to diffract the predetermined wavelength onto the target focal point, and detecting the spectral characteristic using a photon detector

Micro Ring Grating Spectrometer with Adjustable Aperture

A spectrometer includes a micro-ring grating device having coaxially-aligned ring gratings for diffracting incident light onto a target focal point, a detection device for detecting light intensity, one or more actuators, and an adjustable aperture device defining a circular aperture. The aperture circumscribes a target focal point, and directs a light to the detection device. The aperture device is selectively adjustable using the actuators to select a portion of a frequency band for transmission to the detection device. A method of detecting intensity of a selected band of incident light includes directing incident light onto coaxially-aligned ring gratings of a micro-ring grating device, and diffracting the selected band onto a target focal point using the ring gratings. The method includes using an actuator to adjust an aperture device and pass a selected portion of the frequency band to a detection device for measuring the intensity of the selected portion