Impact of Excess Lead Iodide on the Recombination Kinetics in Metal Halide Perovskites

Fundmental comprehension of light-induced processes in perovskites are still scarce. One active debate surrounds the influence of excess lead iodide (PbI2) on device performance, as well as optoelectronic properties, where both beneficial and detrimental traits have been reported. Here, we study its impact on charge carrier recombination kinetics by simultaneously acquiring the photoluminescence quantum yield and time-resolved photoluminescence as a function of excitation wavelength (450–780 nm). The presence of PbI2 in the perovskite film is identified via a unique spectroscopic signature in the PLQY spectrum. Probing the recombination in the presence and absence of this signature, we detect a radiative bimolecular recombination mechanism induced by PbI2. Spatially resolving the photoluminescence, we determine that this radiative process occurs in a small volume at the PbI2/perovskite interface, which is only active when charge carriers are generated in PbI2, and therefore provide deeper insight into how excess PbI2 may improve the properties of perovskite-based devices

Excitation wavelength dependence of photoluminescence flickering in degraded MAPbI 3 perovskite and its connection to lead iodide formation

Metal halide perovskite semiconductors often exhibit photoluminescence blinking and flickering when luminescence of individual small nano- or even microcrystals is monitored. The nature of these fluctuations is not well understood but must be related to the presence of metastable non-radiative recombination channels and efficient charge migration in these materials. Here we report on the excitation wavelength dependence of photoluminescence flickering effect in degraded methylammonium lead iodide (MAPbI3) thin films. While the luminescence intensity is temporary stable when excited in the blue region with wavelength shorter than 530 nm, excitation with red light (wavelength longer than 530 nm) results in luminescence flickering. It is hypothesised that the wavelength dependence reflects the excitation energy dependence of the photochemical mechanism that switches non-radiative recombination channels on and off. The effect can also be related to hindered charge carrier diffusion due to their localization in the interfacial layer between MAPbI3 and PbI2 which is formed in the course of degradation

Heterogeneities and Emissive Defects in MAPbI3 Perovskite Revealed by Spectrally Resolved Luminescence Blinking

The fate of excited charge carriers in metal halide perovskite semiconductors is influenced by energetic disorder and defects. Here, photoluminescence (PL) blinking is used to probe metastable nonradiative (NR) centers and the nanoscale energy landscape. Temporal activation of an NR center creates a local region with increased NR recombination. Activation and deactivation of this local PL quenching does not only lead to PL blinking, but also to fluctuations of the PL spectra, if the crystal is inhomogeneous in the sense that the PL emission spectrum is slightly different from one location to another. It resembles the spectral hole-burning technique; however, here the eliminated excited states are chosen by their spatial localization close to the quencher. In MAPbI3, PL spectral fluctuations at low temperature reveal energetic inhomogeneities on the order of 5 to 10 meV. Quenching of the main PL band is often found to correlate with an increase of the low-energetic tail of the PL spectra, which is attributed to partially radiative recombination of charges captured by the NR center. The transition energy of the NR center is found to be only ≈80 meV smaller than the bandgap, implying that the underlying defect cannot be a single mid-bandgap state

Presence of Maximal Characteristic Time in Photoluminescence Blinking of MAPbI3 Perovskite

Photoluminescence (PL) blinking is a common phenomenon in nanostructured semiconductors associated with charge trapping and defect dynamics. PL blinking kinetics exhibit very broadly distributed timescales. The traditionally employed analysis of probability distribution of ON and OFF events suffers from ambiguities in their determination in complex PL traces making its suitability questionable. Here, the statistically correct power spectral density (PSD) estimation method applicable for fluctuations of any complexity is employed. PSDs of the blinking traces of submicrometer MAPbI3 crystals at high frequencies follow power law with excitation power density dependent parameters. However, at frequencies less than 0.3 Hz, the majority of the PSDs saturate revealing the presence of a maximal characteristic timescale of blinking in the range of 0.5–10 s independently of the excitation power density. Super-resolution optical microscopy shows the characteristic timescale to be an inherent material property independent of polycrystallinity. Thus, for the first time the maximum timescale of the multiscale blinking behavior of nanoparticles is observed demonstrating that the power law statistics are not universal for semiconductors. It is proposed that the viscoelasticity of metal-halide perovskites can limit the maximum timescale for the PL fluctuations by limiting the memory of preceded deformations/re-arrangements of the crystal lattice