Spektri vibracija i proučavanje strukture stakala Hg-As-S

Structural interpretation of Raman and IR spectra, and X-ray diffraction study give evidence to the fact that the adding of mercury into binary glass-forming system causes the formation of α-HgS and β-As4S4 at CHg > 2 at.%. Slow quenching of the melt of HgAsS2 compound results in the separation of α-HgS and β-As4S4. In the chain-like model of a-As2S3 structure, the addition of Hg atoms results in the increase of chain dimensions from 1.42 to 1.8 nm.Objašnjenje strukture na osnovi Ramanovih i infracrvenih spektara i proučavanje difrakcije X zračenja pokazuju da dodavanje Hg u binarni staklasti As-S uzrokuje stvaranje α–HgS i β–As4S4 pri CHg > 2 at.%. Sporim kaljenjem taljevine HgAsS2 dolazi do razdvajanja α–HgS i β–As4S4. U lančastom modelu strukture a–As2S3, dodavanje Hg uzrokuje porast duljine lanaca od 1.42 na 1.8 nm

Spektri vibracija i proučavanje strukture stakala Hg-As-S

Structural interpretation of Raman and IR spectra, and X-ray diffraction study give evidence to the fact that the adding of mercury into binary glass-forming system causes the formation of α-HgS and β-As4S4 at CHg > 2 at.%. Slow quenching of the melt of HgAsS2 compound results in the separation of α-HgS and β-As4S4. In the chain-like model of a-As2S3 structure, the addition of Hg atoms results in the increase of chain dimensions from 1.42 to 1.8 nm.Objašnjenje strukture na osnovi Ramanovih i infracrvenih spektara i proučavanje difrakcije X zračenja pokazuju da dodavanje Hg u binarni staklasti As-S uzrokuje stvaranje α–HgS i β–As4S4 pri CHg > 2 at.%. Sporim kaljenjem taljevine HgAsS2 dolazi do razdvajanja α–HgS i β–As4S4. U lančastom modelu strukture a–As2S3, dodavanje Hg uzrokuje porast duljine lanaca od 1.42 na 1.8 nm

Laser-induced optical changes in amorphous multilayers

It is shown that the well-known blue-shift of the fundamental absorption edge in as-deposited compositionally modulated amorphous Si/Ge and As6Se94/Se80Te20 multilayers (with periods of 4-8 nm) is further enhanced due to the thermal or laser-induced intermixing of adjacent layers. The laser-induced intermixing process, as supported by experiments and model calculations, can be attributed to both the local heating and photo-effects in As6Se94/Se80Te20 multilayers, while only the thermal effects were observed for Si/Ge multilayers. Structural transformations, based on this enhanced interdiffusion, provides good capability for spatially patterning optoelectronic devices and digital information recording

Photo-induced transformations in chalcogenide composite layers

Investigations of photo-induced structural transformations (PST) and related changes of optical parameters in the light-sensitive amorphous chalcogenides were extended to composite layers, which consist of a wide band-gap material and an active material, Se60Te40 with a smaller band gap. Photo-stimulated interdiffusion and/or crystallization in layered Se0.6Tc0.4/As0.6Se0.94 and Se0.6Te0.4/SiOx were investigated with respect to their dependence on the compositional modulation of the multilayer at scale-dimensions (similar to3-10nm). It was established that PST due to the interdiffusion and crystallization can be efficiently operated by the composition of the adjacent layers of the multilayer which results in the change of the transformation rate and of the optical relief type (positive or negative). The comparison with a single Se0.6Te0.4 layer and with the known data for amorphous-Se/As2S3 multilayers supports the advantages of composite layers for amplitude-phase optical recording. (C) 2004 Published by Elsevier B.V