Semiconductor detectors for neutron flux measurements

Abstract Silicon detectors with 235U converter for neutron flux measurements over a wide energy range (from thermal up to epithemal neutrons) have been developed. The surface-barrier detectors with plastic converters were developed for fast neutron detection

Semiconductor sensors for dosimetry of epithermal neutrons

Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due to this fact testing our p-i-n diodes under irradiation by the epithermal neutrons was carried out. The more advanced p-i-n diodes on the base of high purity silicon were used at present work, and, as a result, we have obtained considerably more sensitive sensors for more wide range of neutron doses. The sensitivity of sensors is 0.14 V/Gy for average neutron energy of 24 keV

Silicon detectors for γ-ray and β-spectroscopy

Large active volume Si(Li) detectors were successfully developed for γ-ray spectrometry at room temperature that show a sufficient efficiency and an energy resolution that is better than scintillation detectors. The higher efficiency of the proposed detectors with respect to normal silicon diodes is achieved by increasing the active volume. For this purpose special attention is given to the selection of the initial material which has to show homogeneous electro-physical parameters, low concentration of oxygen impurities and high structural perfection. The technique of using lithium ions is used as these drift into large depths and hence the profile of the impurity distribution is optimized