32 research outputs found
Resonant Excitation of Quantum Emitters in Hexagonal Boron Nitride
Quantum emitters in layered hexagonal boron nitride (hBN) have recently
attracted a great attention as promising single photon sources. In this work,
we demonstrate resonant excitation of a single defect center in hBN, one of the
most important prerequisites for employment of optical sources in quantum
information application. We observe spectral linewidths of hBN emitter narrower
than 1 GHz while the emitter experiences spectral diffusion. Temporal
photoluminescence measurements reveals an average spectral diffusion time of
around 100 ms. On-resonance photon antibunching measurement is also realized.
Our results shed light on the potential use of quantum emitters from hBN in
nanophotonics and quantum information
Framework for engineering of spin defects in hexagonal boron nitride by focused ion beams
Hexagonal boron nitride (hBN) is gaining interest as a wide bandgap van der
Waals host of optically active spin defects for quantum technologies. Most
studies of the spin-photon interface in hBN focus on the negatively charged
boron vacancy (VB-) defect, which is typically fabricated by ion irradiation.
However, VB- fabrication methods often lack robustness and reproducibility when
applied to thin flakes (less than 10 nm) of hBN. Here we identify mechanisms
that both promote and inhibit VB- generation and optimize ion beam parameters
for site-specific fabrication of optically active VB- centers. We emphasize
conditions accessible by high resolution focused ion beam (FIB) systems, and
present a framework for VB- fabrication in hBN flakes of arbitrary thickness
for applications in quantum sensing and quantum information processing.Comment: 11 pages, 5 figure
NearâField Energy Transfer between a Luminescent 2D Material and Color Centers in Diamond
Energy transfer between fluorescent probes lies at the heart of many applications ranging from bioâsensing and bioâimaging to enhanced photodetection and light harvesting. In this work, Förster resonance energy transfer (FRET) between shallow defects in diamondânitrogenâvacancy (NV) centersâand atomically thin, 2D materialsâtungsten diselenide (WSe2)âis studied. By means of fluorescence lifetime imaging, the occurrence of FRET in the WSe2/NV system is demonstrated. Further, it is shown that in the coupled system, NV centers provide an additional excitation pathway for WSe2 photoluminescence. The results constitute the first step toward the realization of hybrid quantum systems involving singleâcrystal diamond and 2D materials that may lead to new strategies for studying and controlling spin transfer phenomena and spin valley physics
NearâField Energy Transfer between a Luminescent 2D Material and Color Centers in Diamond
Energy transfer between fluorescent probes lies at the heart of many applications ranging from bioâsensing and bioâimaging to enhanced photodetection and light harvesting. In this work, Förster resonance energy transfer (FRET) between shallow defects in diamondânitrogenâvacancy (NV) centersâand atomically thin, 2D materialsâtungsten diselenide (WSe2)âis studied. By means of fluorescence lifetime imaging, the occurrence of FRET in the WSe2/NV system is demonstrated. Further, it is shown that in the coupled system, NV centers provide an additional excitation pathway for WSe2 photoluminescence. The results constitute the first step toward the realization of hybrid quantum systems involving singleâcrystal diamond and 2D materials that may lead to new strategies for studying and controlling spin transfer phenomena and spin valley physics