DESCRIPTION OF UTI IN PATIENTS WITH RENAL TRANSPLANTATION ADMITTED IN LABAFINEGAD HOSPITAL FROM 1384 TO 1385

Background: The renal transplantation is now the treatment of choice for ESRD. Urinary tract is the most common site for infection after kidney transplantation. The different clinical & microbiological aspects of UTl in renal transplantation. Materials and Methods: In this cross- sectional study, the clinical manifestation at the time of admission, past medical history, the time of transplantation & the result of laboratory data including U/A, U/C & CBC of patients with kidney transplantation & probable UTl were collected & analysed in SPSS 11.5. ..

Highly conductive Sb-doped layers in strained Si

The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance of highly doped n-type layers created by Sb or As implantation. The improvement is stronger with Sb, leading to a reversal in the relative doping efficiency of these n-type impurities. For Sb, the primary effect is a strong enhancement of activation as a function of tensile strain. At low processing temperatures, 0.7% strain more than doubles Sb activation, while enabling the formation of stable, ~10-nm-deep junctions. This makes Sb an interesting alternative to As for ultrashallow junctions in strain-engineered complementary metal-oxide-semiconductor device

Analysis of the Need to Observe Diplomatic Etiquette as an Integral Part of the Protocol

Статья посвящена анализу связи между протоколом, этикетом и международной вежливостью и необходимостью соблюдения этикета в дипломатических отношениях.The article is devoted to the analysis of the relationship between protocol, etiquette and international courtesy and the need to observe etiquette in diplomatic relations

Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon

Simulation and physical experiments have shown that vacancy engineering implants have the potential to provide outstanding pMOS source/drain performance for several future CMOS device generations. Using vacancy-generating implants prior to boron implantation, hole concentrations approaching 1021cm-3 can be achieved using low thermal budget annealing. In this new study we propose that the vacancy engineering technique is not reliant on the implementation of SOI-based CMOS but is also directly applicable to bulk silicon technologies