The investigation of smart magnetic nanoparticles for use in the hyperthermia treatment of cancer

Self-controlled temperature nanoparticles as a form of hyperthermia treatment to fight against cancer

Synthesis and magnetism of single-phase Mn-Ga films

Single-phase noncubic Mn-Ga films with a thickness of about 200 nm were fabricated by an in situ annealing of [Mn(x)/Ga(y)/Mn(x)]5 multilayers deposited by e-beam evaporation. Mn-Ga alloys prepared in three different compositions Mn2Ga5 and Mn2Ga were found to crystallize in the tetragonal tP14 and tP2 structures, respectively. Mn3Ga crystallizes in the hexagonal hp8 or tetragonal tI8 structures. All three alloys show substantial magnetocrystalline anisotropy between 7 and 10 Mergs/cm3. The samples show hard magnetic properties including coercivities of Mn2Ga5 and Mn2Ga about 12.0 kOe and of Mn3Ga about 13.4 kOe. The saturation magnetization and Curie temperature of Mn2Ga5, Mn2Ga, and Mn3Ga are 183 emu/cm3 and 435 K, 342 emu/cm3 and 697 K, and 151 emu/cm3 and 798 K, respectively. The samples show metallic electron transport up to room temperature

Effect of boron doping on nanostructure and magnetism of rapidly quenched Zr\u3csub\u3e2\u3c/sub\u3eCo\u3csub\u3e11\u3c/sub\u3e-based alloys

The role of B on the microstructure and magnetism of Zr16Co82.5-xMo1.5Bx ribbons prepared by arc melting and melt spinning is investigated. Microstructure analysis show that the ribbons consist of a hard-magnetic rhombohedral Zr2Co11 phase and a minor amount of soft-magnetic Co. We show that the addition of B increases the amount of hard-magnetic phase, reduces the amount of soft-magnetic Co and coarsens the grain size from about 35 nm to 110 nm. There is a monotonic increase in the volume of the rhombohedral Zr2Co11 unit cell with increasing B concentration. This is consistent with a previous theoretical prediction that B may occupy a special type of large interstitial sites, called interruption sites. The optimum magnetic properties, obtained for x = 1, are a saturation magnetization of 7.8 kG, a coercivity of 5.4 kOe, and a maximum energy product of 4.1 MGOe

Magnetism and electron transport of MnyGa (1 \u3c y \u3c 2) nanostructures

Nanostructured MnyGa ribbons with varying Mn concentrations including Mn1.2Ga, Mn1.4Ga, Mn1.6Ga, and Mn1.9Ga were prepared using arc-melting and melt-spinning followed by a heat treatment. Our experimental investigation of the nanostructured ribbons shows that the material with y = 1.2, 1.4, and 1.6 prefers the tetragonal L10 structure and that with y = 1.9 prefers the D022 structure. We have found a maximum saturation magnetization of 621 emu/cm3 in Mn1.2Ga which decreases monotonically to 300 emu/cm3 as y reaches 1.9. Although both the L10- and D022-MnyGa samples show a high Curie temperature (Tc) well above room temperature, the value of Tc decreases almost linearly from 702K for Mn1.9Ga to 551K for Mn1.2Ga. All the ribbons are metallic between 2K and 300K but the Mn1.2Ga also shows a resistance minimum near 15K. The observed magnetic properties of the MnyGa ribbons are consistent with the competing ferromagnetic coupling between Mn moments in the regular L10-MnGa lattice sites and antiferromagnetic coupling with excess Mn moments occupying Ga sites

Localization effects and Anomalous Hall conductivity in a disordered 3D ferromagnet

We have prepared the Heusler alloy CoFeV0.5Mn0.5Si in bulk form via arc melting. CoFeV0.5Mn0.5Si is ferromagnetic with a Curie temperature of 657 K. The longitudinal resistivity exhibits a minimum at 150 K, which is attributable to competition between quantum interference corrections at low temperatures and inelastic scattering at higher temperatures. The magnetoresistance (MR) is positive and nearly linear at low temperatures and becomes negative at temperatures close to room temperature. The positive MR in the quantum correction regime is evidence of the presence of the enhanced electron interaction as a contributor to the longitudinal resistivity. Hall effect measurements indicate a carrier concentration of the order of 1022 cm-3, which is nearly 3 orders of magnitude higher than that found in the “parent” material CoFeMnSi. The higher carrier concentration is consistent with the predicted half metallicity of CoFeV0.5Mn0.5Si. The anomalous Hall conductivity of CoFeV0.5Mn0.5Si is temperature independent for temperatures below the resistivity minimum, which is strong evidence of the absence of quantum interference effects on the anomalous Hall conductivity in a 3D ferromagnet

Unusual perpendicular anisotropy in Co\u3csub\u3e2\u3c/sub\u3eTiSi films

Thin films of Co2TiSi on MgO are investigated experimentally and theoretically. The films were produced by magnetron sputtering on MgO(001) and have a thickness of about 100 nm. As bulk Co2TiSi, they crystallize in the normal cubic Heusler (L21) structure, but the films are slightly distorted (c/a = 1.0014) and contain some antisite disorder. The films exhibit a robust perpendicular anisotropy of 0.5 MJ m−3. This result is surprising for several reasons. First, surface and interface anisotropies are too small to explain perpendicular anisotropy in such rather thick films. Second, Co2TiSi has a substantial magnetization and crystallizes in a cubic Heusler structure, so that conventional wisdom predicts a preferential magnetization direction in the film plane rather than perpendicular. Third, the lattice strain of 0.14% is unable to account for the perpendicular anisotropy. We explain the perpendicular anisotropy as a quasicubic symmetry breaking chemical-ordering effect promoted by the substrate

Structural, magnetic, and electron-transport properties of epitaxial Mn\u3csub\u3e2\u3c/sub\u3ePtSn films

The growth of new magnetic materials on suitable insulating substrates is an important part of the development of spin-electronics devices for memory or information processing. Epitaxial thin films of Mn2PtSn were grown on a MgO [001] substrate by magnetron co-sputtering of the constituents. Structural, magnetic, and electron-transport properties were investigated. The epitaxial Mn2PtSn film has an inverse tetragonal structure with the c-axis aligned in the plane of the MgO substrate. The lattice constants determined using XRD and TEM analysis are c=6.124Å and a=b=4.505Å. The orientation of Mn2PtSn c-axis which is 45° away from the a-axis of MgO has resulted in a small lattice mismatch of about 2.8%. The measured saturation magnetization is 5.3 μB/f.u., which is smaller than the first-principles calculated value of 6.4 μB/f.u. for ferromagnetic spin arrangement. Magnetization measurements determined the bulk magnetocrystalline anisotropy constant Kv of about 11.3 Merg/cm3 (1.13MJ/m3). The electron-transport behavior is similar to that of normal magnetic metals. These results indicate that Mn2PtSn may have promising applications in spintronic devices

Electric-Field Control of a Magnetic Phase Transition in Ni\u3csub\u3e3\u3c/sub\u3eV\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e8\u3c/sub\u3e

We report on the electric-field tuning of a magnetic phase transition temperature (TL) in multiferroic Ni3V2O8 thin films. The simultaneous magnetic and ferroelectric transition in Ni3V2O8 exhibits a clear dielectric anomaly; we monitored TL under applied electric and magnetic fields using dielectric measurements. The transition temperature increases by 0.2 K±0.05 K when the sample is biased approximately 25 MV/m compared to zero bias. This electric-field control of the magnetic transition can be qualitatively understood using a mean-field model incorporating a tri-linear coupling between the magnetic order parameters and spontaneous polarization. The shape of the electric field-temperature phase boundary is consistent with the proper order parameter for the multiferroic phase in Ni3V2O8 being a linear combination of the magnetic and ferroelectric correlation functions

High energy product of MnBi by field annealing and Sn alloying

Permanent-magnet materials are one cornerstone of today’s technology, abundant in disk drives, motors, medical equipment, wind generators, and cars. A continuing challenge has been to reconcile high permanent-magnet performance with low raw-material costs. This work reports a Mn-Bi-Sn alloy exclusively made from inexpensive elements, exhibiting high values of Curie-temperature, magnetization, anisotropy, coercivity, and energy product. The samples are produced by field annealing of rapidly quenched Sn-containing MnBi alloys, where the improvement of the magnetic properties is caused by the substitutional occupancy of the 2c sites in the hexagonal NiAs structure by Sn. The substitution modifies the electronic structure of the compound and enhances the magnetocrystalline anisotropy, thereby improv- ing the coercivity of the compound. The energy product reaches 114 kJ/m3 (14.3 MGOe) at room temperature and 86 kJ/m3 (10.8 MGOe) at 200○C; this value is similar to that of the Dy-free Nd2Fe14B and exceeds that of other rare-earth-free permanent-magnet bulk alloys, as encountered in automotive applications

Crystal structure, magnetism and magnetocaloric properties of Mn\u3csub\u3e2−x\u3c/sub\u3eSn\u3csub\u3e0.5\u3c/sub\u3eGa\u3csub\u3e0.5\u3c/sub\u3e (x=0, 0.3, 0.5, 0.8) alloys

Magnetic refrigeration based on the magnetocaloric effect has attracted recent attention due to advantages such as high efficiency and environmental friendliness. We have investigated the structural, magnetic and magnetocaloric properties of Mn2−xSn0.5Ga0.5 (x=0, 0.3, 0.5, 0.8) alloys prepared using arc-melting and meltspinning techniques with prospects for magnetic refrigeration. The Mn2−xSn0.5Ga0.5 alloys, except for Mn1.2Sn0.5Ga0.5, have a single-phase hexagonal crystal structure. The Mn1.2Sn0.5Ga0.5 alloy also contains a small amount of MnSn2 impurity phase. The Curie temperature and high-field (30 kOe) magnetization at 55 K decrease with increasing Mn concentration from 306 K and 64.1 emu/g (1.07 μB/Mn) for Mn1.2Sn0.5Ga0.5 to 262 K and 46.7 emu/g (0.85 μB/Mn) for Mn2Sn0.5Ga0.5, respectively. The peak values of magnetic entropy change are relatively small with ΔSM,max=1.7 Jkg−1K−1for Mn1.5Sn0.5Ga0.5 at 30 kOe. Despite this, these materials show considerable relative cooling power (RCP) along with a wide working temperature range near room temperature and negligible magnetic and thermal hysteresis, where Mn1.2Sn0.5Ga0.5 shows a highest RCP of 102.3 Jkg−1 at 30 kOe