124 research outputs found
Frequency Scaling of Microwave Conductivity in the Integer Quantum Hall Effect Minima
We measure the longitudinal conductivity at frequencies GHz over a range of temperatures K with particular emphasis on the Quantum Hall plateaus. We find that
scales linearly with frequency for a range of magnetic field
around the center of the plateaus, i.e. where . The width of this scaling region decreases with higher
temperature and vanishes by 1.2 K altogether. Comparison between localization
length determined from and DC measurements on the same
wafer show good agreement.Comment: latex 4 pages, 4 figure
Quantum corrections to conductivity: from weak to strong localization
Results of detailed investigations of the conductivity and Hall effect in
gated single quantum well GaAs/InGaAs/GaAs heterostructures with
two-dimensional electron gas are presented. A successive analysis of the data
has shown that the conductivity is diffusive for and behaves like
diffusive one for down to the temperature T=0.4 K. It has been
therewith found that the quantum corrections are not small at low temperature
when . They are close in magnitude to the Drude conductivity so
that the conductivity becomes significantly less than (the
minimal value achieved in our experiment is about at and K). We conclude that the
temperature and magnetic field dependences of conductivity in whole
range are due to changes of quantum corrections.Comment: RevTex 4.0, 10 figures, 7 two-column page
Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity
Large positive (P) magnetoresistance (MR) has been observed in parallel
magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs
heterostructure with a variable-range-hopping (VRH) mechanism of conductivity.
Effect of large PMR is accompanied in strong magnetic fields by a substantial
change in the character of the temperature dependence of the conductivity. This
implies that spins play an important role in 2D VRH conductivity because the
processes of orbital origin are not relevant to the observed effect. A possible
explanation involves hopping via double occupied states in the upper Hubbard
band, where the intra-state correlation of spins is important.Comment: 10 pages, 4 jpeg figure
The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
We present low temperature electrical transport experiments in five field
effect transistor devices consisting of monolayer, bilayer and trilayer MoS2
films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal
that the electronic states in all films are localized well up to the room
temperature over the experimentally accessible range of gate voltage. This
manifests in two dimensional (2D) variable range hopping (VRH) at high
temperatures, while below \sim 30 K the conductivity displays oscillatory
structures in gate voltage arising from resonant tunneling at the localized
sites. From the correlation energy (T0) of VRH and gate voltage dependence of
conductivity, we suggest that Coulomb potential from trapped charges in the
substrate are the dominant source of disorder in MoS2 field effect devices,
which leads to carrier localization as well.Comment: 10 pages, 5 figures; ACS Nano (2011
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