61 research outputs found

    Reentrant phase transition in charged colloidal suspensions

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    We report the observation of a novel phase transition in dilute aqueous suspensions of polystyrene particles as a function of ionic impurity concentration C. The suspension phase separates into dense and rare phases only for a restricted range of C which depends on particle concentration n. The dense phase has liquidlike or crystalline order depending on n and C. Free energies of the homogeneous and the phase-separated states are calculated with an effective interparticle potential. The calculated phase diagram is in qualitative agreement with the present experimental results

    Magnetism in C<SUB>60</SUB> films induced by proton irradiation

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    It is shown that polycrystalline fullerene thin films on hydrogen-passivated Si(111) substrates irradiated by 2 MeV protons display ferromagneticlike behavior at 5 K. At 300 K, both the pristine and the irradiated film show diamagnetic behavior. Magnetization data in the temperature range of 2-300 K in 1 T applied field, for the irradiated film show much stronger temperature dependence compared to the pristine film. Possible origins of ferromagneticlike signals in the irradiated films are discussed

    Optical absorption and photoluminescence spectroscopy of the growth of silver nanoparticles

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    Results obtained from the optical absorption and photoluminescence (PL) spectroscopy experiments have shown the formation of excitons in the silver-exchanged glass samples. These findings are reported here for the first time. Further, we investigate the dramatic changes in the photoemission properties of the silver-exchanged glass samples as a function of postannealing temperature. Observed changes are thought to be due to the structural rearrangements of silver and oxygen bonding during the heat treatments of the glass matrix. In fact, photoelectron spectroscopy does reveal these chemical transformations of silver-exchanged soda glass samples caused by the thermal effects of annealing in a high vacuum atmosphere. An important correlation between temperature-induced changes of the PL intensity and thermal growth of the silver nanoparticles has been established in this Letter through precise spectroscopic studies.Comment: 15 pages,4 figures,PDF fil

    Influence of Annealing on the Optical and Scintillation Properties of CaWO4_4 Single Crystals

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    We investigate the influence of oxygen annealing on the room temperature optical and scintillation properties of CaWO4_4 single crystals that are being produced for direct Dark Matter search experiments. The applied annealing procedure reduces the absorption coefficient at the peak position of the scintillation spectrum (430\sim430 nm) by a factor of 6\sim6 and leads to an even larger reduction of the scattering coefficient. Furthermore, the annealing has no significant influence on the \emph{intrinsic} light yield. An additional absorption occurring at 400\sim400 nm suggests the formation of O^- hole centers. Light-yield measurements at room temperature where one crystal surface was mechanically roughened showed an increase of the \emph{measured} light yield by 40\sim40 % and an improvement of the energy resolution at 59.5 keV by 12\sim12 % for the annealed crystal. We ascribe this result to the reduction of the absorption coefficient while the surface roughening is needed to compensate for the also observed reduction of the scattering coefficient after annealing

    Growth of silver nanoclusters embedded in soda glass matrix

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    Temperature-controlled-growth of silver nanoclusters in soda glass matrix is investigated by low-frequency Raman scattering spectroscopy. Growth of the nanoclusters is ascribed to the diffusion-controlled precipitation of silver atoms due to annealing the silver-exchanged soda glass samples. For the first time, Rutherford backscattering measurements performed in this system to find out activation energy for the diffusion of silver ions in the glass matrix. Activation energy for the diffusion of silver ions in the glass matrix estimated from different experimental results is found to be consistent.Comment: 16 pages, 5 figures, pdf fil

    Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature

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    InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ~1.06 eV at temperatures <=150K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase.Comment: 11 pages, 4 figures, Journa

    Ferromagnetism in cobalt doped n-GaN

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    Ferromagnetic ordering is reported in the post-annealed samples of Co doped n-GaN formed by Co+ implantation. A maximum Curie temperature ~ 250K is recorded for the sample with 8 atomic percent Co. Particle induced x-ray emission-channeling study confirmed the substitutional Co in Ga lattice site. Local atomic arrangement around magnetic impurities is also analyzed using Raman study. A disordered model with carrier mediated coupling of localized magnetic moments is made responsible for the observed ferromagnetic ordering.Comment: 11 pages, 3 figures, Journa

    Optical characterization of GaN by N+ implantation into GaAs at elevated temperature

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    Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies revealed that GaN phases were grown for fluence above 2x1017 cm-2. Temperature-dependent photoluminescence study showed sharp direct band-to-band transition peak ~3.32 eV at temperature <= 200K. The intermediate bandgap value, with respect to ~3.4 eV for hexagonal and ~3.27 eV for cubic phases of GaN is an indicative for the formation of mixed hexagonal and cubic phases.Comment: 9 pages, 4 figuresn Journa
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