Improved universal electrical connector

Universal electrical connector for use with various types of electric cable, inserts, and pin styles is described. Connector may be used over variety of environmental conditions. Details of construction are discussed. Illustrations of connector are included

Packaging concept for LSI beam lead integrated circuits

Development of packaging system for mounting beam lead integrated chip circuit on lead frame is discussed. Process for fabricating large scale integration circuits is described. Diagrams illustrating method of construction are included

Integrated circuit package with lead structure and method of preparing the same

A beam-lead integrated circuit package assembly including a beam-lead integrated circuit chip, a lead frame array bonded to projecting fingers of the chip, a rubber potting compound disposed around the chip, and an encapsulating molded plastic is described. The lead frame array is prepared by photographically printing a lead pattern on a base metal sheet, selectively etching to remove metal between leads, and plating with gold. Joining of the chip to the lead frame array is carried out by thermocompression bonding of mating goldplated surfaces. A small amount of silicone rubber is then applied to cover the chip and bonded joints, and the package is encapsulated with epoxy resin, applied by molding

Method of making shielded flat cable Patent

Shielded flat conductor cable fabricated by electroless and electrolytic platin

Chemical etching for automatic processing of integrated circuits

Chemical etching for automatic processing of integrated circuits is discussed. The wafer carrier and loading from a receiving air track into automatic furnaces and unloading onto a sending air track are included

Thermally grown oxide and diffusions for automatic processing of integrated circuits

A totally automated facility for semiconductor oxidation and diffusion was developed using a state-of-the-art diffusion furnace and high temperature grown oxides. Major innovations include: (1) a process controller specifically for semiconductor processing; (2) an automatic loading system to accept wafers from an air track, insert them into a quartz carrier and then place the carrier on a paddle for insertion into the furnace; (3) automatic unloading of the wafers back onto the air track, and (4) boron diffusion using diborane with plus or minus 5 percent uniformity. Processes demonstrated include Wet and dry oxidation for general use and for gate oxide, boron diffusion, phosphorous diffusion, and sintering

UV detector monitors organic contamination of optical surfaces

Silicon carbide, insensitive to visible light, is used in photodetectors. System contamination can be monitored during the normal operation without interference to the operator, and without shielding from ambient light

Characterization of the extracellular lipase of Bacillus subtilis and its relationship to a membrane-bound lipase found in a mutant strain

Bacillus subtilis CMK33 is a mutant that is more osmotically fragile than the wild type when it is converted to the protoplast form. The protoplasts of this mutant contain a membrane-bound lipase, which is not found in protoplasts of the wild type. Hydrolysis of the membrane lipid of mutant protoplasts by the lipase is the cause of their fragility. A protein found in the wild type organism specifically inhibits the lipase (Kent, C., and Lennarz, W. J. (1972) Proc. Natl. Acad. Sci. U. S. A. 69, 2793-2797). This paper reports that cultures of both mutant and wild type cells contain an extracellular lipase which accumulates during the logarithmic phase of growth. The extracellular activity appears to be induced by a component of the growth medium. The membrane-bound lipase of the mutant has been partially purified and its properties have been compared to those of the extracellular lipase of the wild type. Their properties and sensitivity to the wild type inhibitor are similar, which suggests that the two molecules are closely related. The subcellular location of the lipase in the mutant has been investigated and compared to the location of the membrane-bound portion of the lipase inhibitor in the wild type. The lipase is located almost exclusively in the cytoplasmic membrane and not in mesosomal vesicles. In contrast, the lipase inhibitor is located in both types of membranes and is more concentrated in mesosomal vesicles. Under appropriate conditions, the appearance of new extracellular lipase activity in mutant cultures is paralleled by the loss of an equivalent amount of lipase activity from protoplasts prepared from the cells. This suggests that the membrane-bound lipase may be an intermediate in the secretion of the extracellular lipase. Because of the mutation in B. subtilis CMK33, which results in the absence of the lipase inhibitor, this intermediate can be found in protoplasts of the mutant, although it is not detectable in the wild type. Consequently, the mutant may be useful in studies of the mechanism of secretion of exoenzymes by Bacilli

A new low-expansion nonflammable printed circuit board

Printed circuit board has a thermal coefficient of expansion similar to that of the electronic component leads. High-expansion composite materials are sandwiched between the outer layers of copper and woven fiber glass