Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

We have experimentally demonstrated structural advantages due to rounded corners of rectangular-like cross-section of silicon nanowire (SiNW) field-effect transistors (FETs) on on-current (ION), inversion charge density normalized by a peripheral length of channel cross-section (Qinv) and effective carrier mobility (μeff). The ION was evaluated at the overdrive voltage (VOV) of 1.0 V, which is the difference between gate voltage (Vg) and the threshold voltage (Vth), and at the drain voltage of 1.0 V. The SiNW nFETs have revealed high ION of 1600 μA/μm of the channel width (wNW) of 19 nm and height (hNW) of 12 nm with the gate length (Lg) of 65 nm. We have separated the amount of on-current per wire at VOV = 1.0 V to a corner component and a flat surface component, and the contribution of the corners was nearly 60% of the total ION of the SiNW nFET with Lg of 65 nm. Higher Qinv at VOV = 1.0 V evaluated by advanced split-CV method was obtained with narrower SiNW FET, and it has been revealed the amount of inversion charge near corners occupied 50% of all the amount of inversion charge of the SiNW FET (wNW = 19 nm and hNW = 12 nm). We also obtained high μeff of the SiNW FETs compared with that of SOI planar nFETs. The μeff at the corners of SiNW FET has been calculated with the separated amount of inversion charge and drain conductance. Higher μeff around corners is obtained than the original μeff of the SiNW nFETs. The higher μeff and the large fractions of ION and Qinv around the corners indicate that the rounded corners of rectangular-like cross-sections play important roles on the enhancement of the electrical performance of the SiNW nFETs

Outcomes of Endoscopic Ultrasound-Guided Biliary Drainage in Patients Undergoing Antithrombotic Therapy

Background/Aims The Japan Gastroenterological Endoscopy Society (JGES) has published guidelines for gastroenterological endoscopy in patients undergoing antithrombotic treatment. These guidelines classify endoscopic ultrasound-guided biliary drainage (EUS-BD) as a high-risk procedure. Nevertheless, the bleeding risk of EUS-BD in patients undergoing antithrombotic therapy is uncertain. Therefore, this study aimed to assess the bleeding risk in patients undergoing antithrombotic therapy. Methods This single-center retrospective study included 220 consecutive patients who underwent EUS-BD between January 2013 and December 2018. We managed the withdrawal and continuation of antithrombotic agents according to the JGES guidelines. We compared the bleeding event rates among patients who received and those who did not receive antithrombotic agents. Results A total of 18 patients (8.1%) received antithrombotic agents and 202 patients (91.8%) did not. Three patients experienced bleeding events, with an overall bleeding event rate of 1.3% (3/220): one patient was in the antithrombotic group (5.5%) and two patients were in the non-antithrombotic group (0.9%) (p=0.10). All cases were moderate. The sole thromboembolic event (0.4%) was a cerebral infarction in a patient in the non-antithrombotic group. Conclusions The rate of EUS-BD-related bleeding events was low. Even in patients receiving antithrombotic therapy, the bleeding event rates were not significantly different from those in patients not receiving antithrombotic therapy

Systematic study on work-function-shift in metal/Hf-based high-k gate stacks

Yuki Kita, Shinichi Yoshida, Takuji Hosoi, Takayoshi Shimura, Kenji Shiraishi, Yasuo Nara, Keisaku Yamada and Heiji Watanabe , "Systematic study on work-function-shift in metal/Hf-based high-k gate stacks", Appl. Phys. Lett. 94, 122905 (2009) https://doi.org/10.1063/1.3103314

Depth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100)

We present in-depth profiling of chemical bonding features and defect state density in ultrathin HfSiOxNy (Hf/(Hf+Si)=~43%) films with average nitrogen contents up to ~18at.% by using x-ray photoelectron spectroscopy (XPS) and total photoelectron yield spectroscopy (PYS) in combination with oxide thinning in a dilute HF solution. The films were prepared on pre-cleaned Si(100) by an atomic layer chemical vapor deposition (ALCVD) method and followed by plasma nitridation. By annealing at 1050°C in N2 ambience, Si-N bonding units in the films are increased as a result of thermal decomposition of Hf-Nx(x=2 and 3) units and the interfacial oxidation accompanied with nitrogen incorporation is caused. For the annealed samples, Hf ions coordinated with two N atoms are distributed with a profile peaked around 1nm from the top surface. Also, from the depth profiles of chemical compositions, which were determined from the change in the intensity at each thinning step, we found that the oxygen content becomes its minimum around ~1.2nm from the surface while the nitrogen content becomes its maximum within ~1.5nm from the surface. The result suggests that the surface re-oxidation is promoted coincidentally with the diffusion of N atoms generated by thermal decomposition of the Hf-Nx units during the N2- annealing. The photoelectron yield from filled defect states in the dielectric stacks was increased in the early stages of oxide thinning and then decreased with further progressive thinning. The depth profile of the defect states, which was derived from the change in the yield, shows that the defect state density becomes its maximum in the near-surface region where oxygen deficiency becomes significant. It is likely that the imbalance in chemical coordination between anions and cations is responsible for the defect generation

Impact of Surface Roughness on Thermoelectric Properties of Silicon Nanotubes

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