Micromachined Millimetre-Wave Passive Components at 38 and 77 GHz

A precision micro-fabrication technique has been developed for millimetre-wave components of air-filled three-dimensional structures, such as rectangular coaxial lines or waveguides. The devices are formed by bonding several layers of micromachining defined slices with a thickness of a few hundred micrometres. The slices are thickphotoresist SU8 defined by photolithography, or silicon with a pattern defined by deep reactive ion etching; both are coated with gold by evaporation. The process is simple, and low-cost, as compared with conventional precision metal machining, but yields mm-wave components with good performance. The components are light weight and truly airfilled with no dielectric support. This paper reviews several of these micromachined mm-wave components at 38 and 77 GHz for communications and radar applications

Multidimensional optical fractionation with holographic verification

The trajectories of colloidal particles driven through a periodic potential energy landscape can become kinetically locked in to directions dictated by the landscape's symmetries. When the landscape is realized with forces exerted by a structured light field, the path a given particle follows has been predicted to depend exquisitely sensitively on such properties as the particle's size and refractive index These predictions, however, have not been tested experimentally. Here, we describe measurements of colloidal silica spheres' transport through arrays of holographic optical traps that use holographic video microscopy to track individual spheres' motions in three dimensions and simultaneously to measure each sphere's radius and refractive index with part-per-thousand resolution. These measurements confirm previously untested predictions for the threshold of kinetically locked-in transport, and demonstrate the ability of optical fractionation to sort colloidal spheres with part-per-thousand resolution on multiple characteristics simultaneously.Comment: 4 pages, 2 figures. Accepted for publication in Physical Review Letter

Spin-transfer torques in anti-ferromagnetic metals from first principles

In spite of the absence of a macroscopic magnetic moment, an anti-ferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting anti-ferromagnet is polarized as well, leading to spin-transfer torques when the order parameter is textured, such as in anti-ferromagnetic non-collinear spin valves and domain walls. We report a first principles study on the electronic transport properties of anti-ferromagnetic systems. The current-induced spin torques acting on the magnetic moments are comparable with those in conventional ferromagnetic materials, leading to measurable angular resistances and current-induced magnetization dynamics. In contrast to ferromagnets, spin torques in anti-ferromagnets are very nonlocal. The torques acting far away from the center of an anti-ferromagnetic domain wall should facilitate current-induced domain wall motion.Comment: The paper has substantially been rewritten, 4 pages, 5 figure

Strain accommodation through facet matching in La1.85_\text{1.85}Sr0.15_\text{0.15}CuO4_\text{4}/Nd1.85_\text{1.85}Ce0.15_\text{0.15}CuO4_\text{4} ramp-edge junctions

Scanning nano-focused X-ray diffraction (nXRD) and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd$_\text{1.85}$Ce$_\text{0.15}$CuO$_\text{4}$ and superconducting hole-doped La$_\text{1.85}$Sr$_\text{0.15}$CuO$_\text{4}$ thin films, the latter being the top layer. On the ramp, a new growth mode of La$_\text{1.85}$Sr$_\text{0.15}$CuO$_\text{4}$ with a 3.3 degree tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.Comment: 5 pages, 4 figures & 3 pages supplemental information with 2 figures. Copyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APL Mat. 3, 086101 (2015) and may be found at http://dx.doi.org/10.1063/1.492779