10 research outputs found
Evidence for Active Atomic Defects in Monolayer Hexagonal Boron Nitride: A New Mechanism of Plasticity in Two-Dimensional Materials
We report the formation and motion
of 4|8 (square-octagon) defects
in monolayer hexagonal boron nitride (h-BN). The 4|8 defects, involving
less-favorable BâB and NâN bonds, are mobile within
the monolayer at high sample temperature (âź1000 K) under electron
beam irradiation. Gliding of one or two atomic rows along the armchair
direction is suggested to be the origin of the defect motion. This
represents a completely new mechanism of plasticity in two-dimensional
materials
Synthesis and Atomic Characterization of a Ti<sub>2</sub>O<sub>3</sub> Nanosheet
Titanium oxide nanosheets have been attracting much attention owing to their photocatalytic property. Here, we synthesized a Ti<sub>2</sub>O<sub>3</sub> nanosheet by the reduction of a titania nanosheet (Ti<sub>0.87</sub>O<sub>2</sub>) that was one or two atoms in thickness. The atomic structure of the Ti<sub>2</sub>O<sub>3</sub> nanosheet was quantitatively revealed by electron diffraction analysis, electron energy-loss spectroscopy, and high-resolution transmission electron microscopy (TEM). A titania nanosheet (Ti<sub>0.87</sub>O<sub>2</sub>) consisting of edge-shared TiO<sub>6</sub> octahedra was transformed to a Ti<sub>2</sub>O<sub>3</sub> nanosheet consisting of face-shared octahedra by electron beam irradiation. This represents a stable crystal phase of titania nanosheets like the Magneli phase in oxygen-deficient environments. The atomic arrangement of the Ti<sub>2</sub>O<sub>3</sub> nanosheet was directly observed by newly developed aberration-corrected TEM
Direct Observation of Band Structure Modifications in Nanocrystals of CsPbBr<sub>3</sub> Perovskite
We investigate the
variation of the bandgap energy of single quantum dots of CsPbBr<sub>3</sub> inorganic halide perovskite as a function of size and shape
and upon embedding within an ensemble. For that purpose, we make use
of valence-loss electron spectroscopy with <i>Z</i>-contrast
annular dark-field (ADF) imaging in a state-of-the-art low-voltage
monochromatic scanning transmission electron microscope. In the experiment,
energy absorption is directly mapped onto individual quantum dots,
whose dimensions and location are simultaneously measured to the highest
precision. In that way, we establish an intimate relation between
quantum dot size and even shape and its bandgap energy on a single
object level. We explicitly follow the bandgap increase in smaller
quantum dots due to quantum confinement and demonstrate that it is
predominantly governed by the smallest of the three edges of the cuboidal
perovskite dot. We also show the presence of an effective coupling
between proximal dots in an ensemble, leading to band structure modification.
These unique insights are directly relevant to the development of
custom-designed quantum structures and solids which will be realized
by purposeful assemblage of individually characterized and selected
quantum dots, serving as building blocks
Correction to âSynthesis and Atomic Characterization of a Ti<sub>2</sub>O<sub>3</sub> Nanosheetâ
Correction to âSynthesis and Atomic Characterization of a Ti<sub>2</sub>O<sub>3</sub> Nanosheet
Unexpected Huge Dimerization Ratio in One-Dimensional Carbon Atomic Chains
Peierls
theory predicted atomic distortion in one-dimensional (1D)
crystal due to its intrinsic instability in 1930. Free-standing carbon
atomic chains created in situ in transmission electron microscope
(TEM)â are an ideal example to experimentally observe the
dimerization behavior of carbon atomic chain within a finite length.
We report here a surprisingly huge distortion found in the free-standing
carbon atomic chains at 773 K, which is 10 times larger than the value
expected in the system. Such an abnormally distorted phase only dominates
at the elevated temperatures, while two distinct phases, distorted
and undistorted, coexist at lower or ambient temperatures. Atom-by-atom
spectroscopy indeed shows considerable variations in the carbon 1s
spectra at each atomic site but commonly observes a slightly downshifted
Ď* peak, which proves its sp<sup>1</sup> bonding feature. These
results suggest that the simple model, relaxed and straight, is not
fully adequate to describe the realistic 1D structure, which is extremely
sensitive to perturbations such as external force or boundary conditions
Unexpected Huge Dimerization Ratio in One-Dimensional Carbon Atomic Chains
Peierls
theory predicted atomic distortion in one-dimensional (1D)
crystal due to its intrinsic instability in 1930. Free-standing carbon
atomic chains created in situ in transmission electron microscope
(TEM)â are an ideal example to experimentally observe the
dimerization behavior of carbon atomic chain within a finite length.
We report here a surprisingly huge distortion found in the free-standing
carbon atomic chains at 773 K, which is 10 times larger than the value
expected in the system. Such an abnormally distorted phase only dominates
at the elevated temperatures, while two distinct phases, distorted
and undistorted, coexist at lower or ambient temperatures. Atom-by-atom
spectroscopy indeed shows considerable variations in the carbon 1s
spectra at each atomic site but commonly observes a slightly downshifted
Ď* peak, which proves its sp<sup>1</sup> bonding feature. These
results suggest that the simple model, relaxed and straight, is not
fully adequate to describe the realistic 1D structure, which is extremely
sensitive to perturbations such as external force or boundary conditions
Extraordinary Interfacial Stitching between Single All-Inorganic Perovskite Nanocrystals
All-inorganic cesium
lead halide perovskite nanocrystals are extensively studied because
of their outstanding optoelectronic properties. Being of a cubic shape
and typically featuring a narrow size distribution, CsPbX<sub>3</sub> (X = Cl, Br, and I) nanocrystals are the ideal starting material
for the development of homogeneous thin films as required for photovoltaic
and optoelectronic applications. Recent experiments reveal spontaneous
merging of drop-casted CsPbBr<sub>3</sub> nanocrystals, which is promoted
by humidity and mild-temperature treatments and arrested by electron
beam irradiation. Here, we make use of atom-resolved annular dark-field
imaging microscopy and valence electron energy loss spectroscopy in
a state-of-the-art low-voltage monochromatic scanning transmission
electron microscope to investigate the aggregation between individual
nanocrystals at the atomic level. We show that the merging process
preserves the elemental composition and electronic structure of CsPbBr<sub>3</sub> and takes place between nanocrystals of different sizes and
orientations. In particular, we reveal seamless stitching for aligned
nanocrystals, similar to that reported in the past for graphene flakes.
Because the crystallographic alignment occurs naturally in drop-casted
layers of CsPbX<sub>3</sub> nanocrystals, our findings constitute
the essential first step toward the development of large-area nanosheets
with band gap energies predesigned by the nanocrystal choiceî¸the
gateway to large-scale photovoltaic applications of inorganic perovskites
Auto-optimizing Hydrogen Evolution Catalytic Activity of ReS<sub>2</sub> through Intrinsic Charge Engineering
Optimizing
active electronic states responding to catalysis is
of paramount importance for developing high-activity catalysts because
thermodynamics itself may not favor forming an optimal electronic
state. Setting the monolayer transition metal dichalcogenide (TMD)
ReS<sub>2</sub> as a model for the hydrogen evolution reaction (HER),
we uncover that intrinsic charge engineering has an auto-optimizing
effect on enhancing catalytic activity through regulating active electronic
states. The experimental and theoretical results show that intrinsic
charge compensation from S to ReâRe bonds could manipulate
the active electronic states, allowing hydrogen to absorb the active
sites neither strongly nor weakly. Two types of S sites exhibit the
optimal hydrogen adsorption free energies (Î<i>G</i><sub>H*</sub>) of 0.016 and 0.061 eV, which are the closest to zero
corresponding to the highest HER activity. This auto-optimization
via charge engineering is further demonstrated by higher turnover
frequency per sulfur atom of 1â10 s<sup>â1</sup> and
lower overpotential of â147 mV at 10 mA cm<sup>â2</sup> than those of other TMDs through multiscale activation and optimization.
This work opens an avenue in designing extensive active catalysts
through intrinsic charge engineering strategy
Controlled Synthesis of Atomically Thin 1T-TaS<sub>2</sub> for Tunable Charge Density Wave Phase Transitions
The
charge density wave (CDW) in two-dimensional (2D) materials
is attracting substantial interest because of its magnificent many-body
collective phenomena. Various CDW phases have been observed in several
2D materials before they reach the phase of superconductivity. However,
to date, the atomically thin CDW materials were mainly fabricated
by mechanically exfoliating from their bulk counterparts, which leads
to low production yield and small sample sizes. Here, we report the
controlled synthesis of atomically thin 1T-TaS<sub>2</sub>, a typical
CDW material, by a chemical vapor deposition (CVD) method. The high
quality of as-grown 1T-TaS<sub>2</sub> has been confirmed by complementary
characterization technologies. Moreover, the thickness-dependent CDW
phase transitions have been revealed in these ultrathin flakes by
temperature-dependent Raman spectra. This work opens up a new window
for the large-scale synthesis of ultrathin CDW materials and sheds
light on the fabrication of next-generation electronic devices
Scalable van der Waals Heterojunctions for High-Performance Photodetectors
Atomically thin two-dimensional
(2D) materials have attracted increasing attention for optoelectronic
applications in view of their compact, ultrathin, flexible, and superior
photosensing characteristics. Yet, scalable growth of 2D heterostructures
and the fabrication of integrable optoelectronic devices remain unaddressed.
Here, we show a scalable formation of 2D stacks and the fabrication
of phototransistor arrays, with each photosensing element made of
a grapheneâWS<sub>2</sub> vertical heterojunction and individually
addressable by a local top gate. The constituent layers in the heterojunction
are grown using chemical vapor deposition in combination with sulfurization,
providing a clean junction interface and processing scalability. The
aluminum top gate possesses a self-limiting oxide around the gate
structure, allowing for a self-aligned deposition of drain/source
contacts to reduce the access (ungated) channel regions and to boost
the device performance. The generated photocurrent, inherently restricted
by the limited optical absorption cross section of 2D materials, can
be enhanced by 2 orders of magnitude by top gating. The resulting
photoresponsivity can reach 4.0 A/W under an illumination power density
of 0.5 mW/cm<sup>2</sup>, and the dark current can be minimized to
few picoamperes, yielding a low noise-equivalent power of 2.5 Ă
10<sup>â16</sup> W/Hz<sup>1/2</sup>. Tailoring 2D heterostacks
as well as the device architecture moves the applications of 2D-based
optoelectronic devices one big step forward