Evidence for Active Atomic Defects in Monolayer Hexagonal
Boron Nitride: A New Mechanism of Plasticity in Two-Dimensional Materials
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Abstract
We report the formation and motion
of 4|8 (square-octagon) defects
in monolayer hexagonal boron nitride (h-BN). The 4|8 defects, involving
less-favorable B–B and N–N bonds, are mobile within
the monolayer at high sample temperature (∼1000 K) under electron
beam irradiation. Gliding of one or two atomic rows along the armchair
direction is suggested to be the origin of the defect motion. This
represents a completely new mechanism of plasticity in two-dimensional
materials