Shifting Between Cognitive and Visual Distraction: The Impact of Cognitive Ability on Distraction Caused by Secondary Tasks

We conducted an experiment in order to investigate impacts of centralexecutive (CE) functions and modality of secondary task presentation in a dualtaskexperiment. We found that shifting ability, out of three major CE functions(inhibition, shifting, and updating) was particularly important in determiningwhether primary (pedal-tracking) task performance was better in the presence ofauditory, vs. visual, presentation of the secondary task

Orbital Control of Single-Molecule Conductance Perturbed by π‑Accepting Anchor Groups: Cyanide and Isocyanide

Electron transport properties through benzene molecules disubstituted with π-accepting cyanide and isocyanide anchor groups at their para and meta positions are investigated on the basis of a qualitative orbital analysis at the Hückel molecular orbital level of theory. The applicability of a previously derived orbital symmetry rule for electron transport is extended to the systems perturbed by the π-accepting anchor groups, where the HOMO–LUMO symmetry in the molecular orbital energies relative to the Fermi level is removed. The conservation of the HOMO–LUMO symmetry in the spatial distribution of the molecular orbitals between the unperturbed benzene molecule and the perturbed molecules with the anchor groups rationalizes symmetry-allowed electron transport through the para isomers. On the other hand, destructive interferences between the nearly 2-fold degenerate frontier orbitals constructed from the 2-fold degenerate orbitals of the unperturbed benzene molecule and the anchor groups lead to symmetry-forbidden electron transport through the meta isomers. The qualitative orbital thinking is supported by more quantitative density functional theory (DFT) calculations combined with the nonequilibrium Green’s function (NEGF) method. The orbital analysis is a powerful tool for the understanding and rational design of molecular devices composed of π-conjugated hydrocarbons and those perturbed by the π-accepting anchor groups

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon−molecular−ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon−molecular−ion−implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors

Highly conducting and very thin ZnO : Al films with ZnO buffer layer fabricated by solid phase crystallization from amorphous phase

We propose a novel method of oxide crystal growth via atomic-additive mediated amorphization. By utilizing this method, solid-phase crystallization (SPC) of ZnO from amorphous phase has been successfully demonstrated via nitrogen atom mediation. The resultant SPC-ZnO films are highly orientated and the crystallinity is higher than that of the films prepared by conventional sputtering. By using the SPC-ZnO as a buffer layer, the resistivity of ZnO:Al (AZO) films is drastically decreased. 20-nm-thick AZO films with a resistivity of 5 × 10^<-4> Ω cm and an optical transmittance higher than 80% in a wide wavelength range of 400-2500 nm have been obtained

Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH₂P Molecular Ion Implantation

Using a new implantation technique with multielement molecular ions consisting of carbon, hydrogen, and phosphorus, namely, CH2P molecular ions, we developed an epitaxial silicon wafer with proximity gettering sinks under the epitaxial silicon layer to improve the gettering capability for metallic impurities. A complementary metal-oxide-semiconductor (CMOS) image sensor fabricated with this novel epitaxial silicon wafer has a markedly reduced number of white spot defects, as determined by dark current spectroscopy (DCS). In addition, the amount of nickel impurities gettered in the CH2P-molecular-ion-implanted region of this CMOS image sensor is higher than that gettered in the C3H5-molecular-ion-implanted region; and this implanted region is formed by high-density black pointed defects and deactivated phosphorus after epitaxial growth. From the obtained results, the CH2P-molecular-ion-implanted region has two types of complexes acting as gettering sinks. One includes carbon-related complexes such as aggregated C–I, and the other includes phosphorus-related complexes such as P4–V. These complexes have a high binding energy to metallic impurities. Therefore, CH2P-molecular-ion-implanted epitaxial silicon wafers have a high gettering capability for metallic impurities and contribute to improving the device performance of CMOS image sensors. (This manuscript is an extension from a paper presented at the 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2022))

TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C₃H₅-Molecular-Ion-Implanted Silicon Substrate Surface

In this study, we investigate the initial rapid recrystallization of a discretely amorphized C3H5-molecular-ion-implanted silicon (Si) substrate surface in the subsequent thermal annealing treatment through the analysis of plan-view transmission electron microscopy (TEM) images and technology computer-aided design (TCAD) process simulation. In the approach of the analysis of the plan-view TEM image of the Si substrate surface, we found that initial rapid recrystallization occurs in the intermediate regions between the residual crystalline and discrete amorphous regions formed in the C3H5-molecular-ion-implanted Si substrate surface. In addition, the TCAD process simulation results indicate that the intermediate regions correspond to the amorphous pockets formed around the discrete amorphous regions in the C3H5-molecular-ion-implanted Si substrate surface and are recrystallized preferentially during the short thermal annealing time. These plan-view TEM image analysis and TCAD process simulation results reveal a two-step recrystallization of the discretely amorphized C3H5-molecular-ion-implaned Si substrate surface. After the initial rapid recrystallization of amorphous pockets in the 1st step, the recrystallization of discrete amorphous regions starts in the 2nd step. The incubation period between the 1st and 2nd steps is the time required to recrystallize the amorphous pockets around the discrete amorphous regions completely and redefine the amorphous/crystalline interface