Compositional analysis of silicon

The use of surface analysis methods in the detection and evaluation of elemental and impurity species in Si is presented. Examples are provided from polycrystalline Si and high-efficiency MINP cells. Auger electron spectroscopy and secondary ion mass spectrometry are used to complement microelectrical data obtained by electron-beam induced-current measurements. A new method is discussed which utilizes the volume indexing of digital secondary ion mass spectroscopy signals, providing compositional information and impurity maps on internal materials/device interfaces

Economic Analysis of a Brackish Water Photovoltaic-Operated (BWRO-PV) Desalination System

The photovoltaic (PV)-powered reverse-osmosis (RO) desalination system is considered one of the most promising technologies in producing fresh water from both brackish and sea water, especially for small systems located in remote areas. We analyze the economic viability of a small PV-operated RO system with a capacity of 5 m3/day used to desalinate brackish water of 4000 ppm total dissolve solids, which is proposed to be installed in a remote area of the Babylon governorate in the middle of Iraq; this area possesses excellent insolation throughout the year. Our analysis predicts very good economic and environmental benefits of using this system. The lowest cost of fresh water achieved from using this system is US $3.98/ m3, which is very reasonable compared with the water cost reported by small-sized desalination plants installed in rural areas in other parts of the world. Our analysis shows that using this small system will prevent the release annually of 8,170 kg of CO2, 20.2 kg of CO, 2.23 kg of CH, 1.52 kg of particulate matter, 16.41 kg of SO2, and 180 kg of NOx

On the selective deposition of tin and tin oxide on various glasses using a high power diode laser

The deposition of SnO2 using a 120 W high power diode laser (HPDL) on both fused silica and soda-lime-silica glass has been successfully demonstrated. Deposition on both glass substrates was carried out with laser power densities of 650-1600 W cm-2 and at rates of 420-1550 mm min-1. The thickness of the deposited layers was typically around 250 m. The maximum theoretical coverage rate that it may be possible to achieve using the HPDL was calculated as being 3.72 m2 h-1. Owing to the wettability characteristics of Sn, it proved impossible to deposit the metal on either glass substrate. Evidence of solidified microstructures was observed, with the microstructures differing considerably across the same deposited track. These differences were attributed to variations in the solidification rate, R, and the thermal gradient, G. Adhesion of the SnO2 with the soda-lime-silica glass was found to be due to mechanical bonding. The adhesion of the SnO2 with the fused silica was seen to the result of a chemical bond arising from an interface region between the SnO2 and the fused silica glass substrate. This interface region was found to be comprised of mainly Si and rich with Sn3O4

Cross-Section AFM and EFM Examination of Thin-Film Solar Cells

We demonstrated the feasibility of analyzing cross sections of thin-film CdTe/CdS and CIGS/CdS solar cells using atomic force microscopy (AFM)

Distribution of Local Open-Circuit Voltage on Amorphous and Nanocrystalline Mixed-Phase Si:H and SiGe:H Solar Cells (Poster)

By combining SKPM and AFM, they have developed a method to measure the local V{sub oc} distribution in mixed-phase solar cells. The results clearly show the nanocrystalline aggregation. The V{sub oc} is smaller in the nanocrystalline aggregates than in the surrounding amorphous matrix, and the transition from the low to high V{sub oc} is a gradual change. Although there are some lateral charge redistributions, a clear distinction between the amorphous and nanocrystalline regions has been observed. The current SKPM results and previous C-AFM results provide extra support for the two-diode model for explaining the carrier transport in the mixed-phase solar cells

Distribution of Local Open-Circuit Voltage on Amorphous and Nanocrystalline Mixed-Phase Si:H and SiGe:H Solar Cells: Preprint

Local open-circuit voltage (Voc) distributions on amorphous and nanocrystalline mixed-phase silicon solar cells were measured using a scanning Kelvin probe microscope (SKPM) on the p layer of an n-i-p structure without the top ITO contact. During the measurement, the sample was illuminated with a laser beam that was used for the atomic force microscopy (AFM). Therefore, the surface potential measured by SKPM is the sum of the local Voc and the difference in workfunction between the p layer and the AFM tip. Comparing the SKPM and AFM images, we find that nanocrystallites aggregate in the amorphous matrix with an aggregation size of {approx}0.5 ..mu..m in diameter, where many nanometer-size grains are clustered. The Voc distribution shows valleys in the nanocrystalline aggregation area. The transition from low to high Voc regions is a gradual change within a distance of about 1 ..mu..m. The minimum Voc value in the nanocrystalline clusters in the mixed-phase region is larger than the Voc of a nc-Si:H single-phase solar cell. These results could be due to lateral photo-charge redistribution between the two phases. We have also carried out local Voc measurements on mixed-phase SiGe:H alloy solar cells. The magnitudes of Voc in the amorphous and nanocrystalline regions are consistent with the J-V measurements

Intermixing at the heterointerface between ZnS Zn S,O bilayer buffer and CuInS2 thin film solar cell absorber

The application of Zn compounds as buffer layers was recently extended to wide gap CuInS2 CIS based thin film solar cells. Using a new chemical deposition route for the buffer preparation aiming at the deposition of a single layer, nominal ZnS buffer without the need for any toxic reactants such as, e.g. hydrazine has helped to achieve a similar efficiency as respective CdS buffered reference devices. After identifying the deposited Zn compound, as ZnS Zn S,O bi layer buffer in former investigations [M. Bär, A. Ennaoui, J. Klaer, T. Kropp, R. S ez Araoz, N. Allsop, I. Lauermann, H. W. Schock, and M.C. Lux Steiner, Formation of a ZnS Zn S,O bilayer buffer on CuInS2 thin film solar cell absorbers by chemical bath deposition , J. Appl. Phys., accepted.], this time the focus lies on potential diffusion intermixing processes at the buffer absorber interface possibly, clarifying the effect of the heat treatment, which drastically enhances the device performance of respective final solar cells. The interface formation was investigated by x ray photoelectron and x ray excited Auger electron spectroscopy. In addition, photoelectron spectroscopy PES measurements were also conducted using tuneable monochromatized synchrotron radiation in order to gain depth resolved information. The buffer side of the buffer absorber heterointerface were investigated by means of the characterization of Zn S,O ZnS CIS structures where the ZnS Zn S,O bi layer buffer was deposited successively by different deposition times. In order to make the in terms of PES information depth deeply buried absorber side of the buffer absorber heterointerface accessible for characterization, in these cases the buffer layer was etched away by dilute HClaq. We found that while out leached Cu from the absorber layer forms together with the educts in the chemical bath a Zn 1 Z ,Cu2Z S like interlayer between buffer and absorber, Zn is incorporated in the uppermost region of the absorber. Both effects are strongly enhanced by postannealing the Zn S,O ZnS CIS samples. However, it was determined that the major fraction of the Cu and Zn can be found quite close to the heterointerface in the buffer and absorber layer, respectively. Due to this limited in the range of one monolayer spatial extent, these diffusion mechanisms were rather interpreted as a CBD induced and heat treatment promoted Cu Zn ion exchange at the buffer absorber interface. Possible impacts of this intermixing on the performance of the final solar cell devices will also be discusse

Electronic structure, linear, nonlinear optical susceptibilities and birefringence of CuInX2 (X = S, Se, Te) chalcopyrite-structure compounds

The electronic structure, linear and nonlinear optical properties have been calculated for CuInX2 (X=S, Se, Te) chalcopyrite-structure single crystals using the state-of-the-art full potential linear augmented plane wave (FP-LAPW) method. We present results for band structure, density of states, and imaginary part of the frequency-dependent linear and nonlinear optical susceptibilities. We find that these crystals are semiconductors with direct band gaps. We have calculated the birefringence of these crystals. The birefringence is negative for CuInS2 and CuInSe2 while it is positive for CuInTe2 in agreement with the experimental data. Calculations are reported for the frequency-dependent complex second-order non-linear optical susceptibilities . The intra-band and inter-band contributions to the second harmonic generation increase when we replace S by Se and decrease when we replace Se by Te. We find that smaller energy band gap compounds have larger values of in agreement with the experimental data and previous theoretical calculations.Comment: 17 pages, 6 figure