Microfabrication of Alkali Vapor MEMS Cells for chip-scale atomic clock

The technology of MEMS atomic cells containing rubidium or caesium vapors in an atmosphere of neon buffer gas has been developed. Two-chamber silicon cells containing an optical cavity, shallow filtration channels and a technical container for a solid-state alkali source have been implemented in a single-step process of anisotropic wet chemical etching. To prevent significant undercutting of the filtration channels during etching of the through silicon cavities, the shapes of the compensating elements at the convex corners of the silicon nitride mask have been calculated and the composition of the silicon etchant has been experimentally found. The sealing of the cells has been carried out by silicon-glass anodic bonding at a temperature of 250 оС. For this purpose the LK5 glass which has an increased ionic conductivity in comparison with the conventional glass Borofloat 33 was used. The best microfabricated cells allowed us to obtain estimates of the relative instability of the coherent population trapping resonance frequency at the level of 5·10-11 at 1 s

OES diagnostics as a universal technique to control the Si etching structures profile in ICP

In this work, we demonstrate the high efficiency of optical emission spectroscopy to estimate the etching profile of silicon structures in SF$_{6}$/C$_{4}$F$_{8}$/O$_{2}$ plasma. The etching profile is evaluated as a ratio of the emission intensity of the oxygen line (778.1 nm) to the fluorine lines (685.8 nm and 703.9 nm). It was found that for the creation of directional structures with line sizes from 13 to 100 μm and aspect ratio from ≈ 0.15 to ≈ 5 the optimal intensities ratio is in the range of 2–6, and for structures from 400 to 4000 μm with aspect ratio from ≈ 0.03 to ≈ 0.37 it is in the range 1.5–2. Moreover, the influence of the process parameters on the etching rate of silicon, the etching rate of aluminum, the inclination angle of the profile wall of the etched window, the selectivity of silicon etching with respect to aluminum, and the influence on the overetching (Bowing effect) of the structure was investigated

Derazantinib (ARQ 087) in advanced or inoperable FGFR2 gene fusion-positive intrahepatic cholangiocarcinoma

Next-generation sequencing has identified actionable genetic aberrations in intrahepatic cholangiocarcinomas (iCCA), including the fibroblast growth factor receptor 2 (FGFR2) fusions. Derazantinib (ARQ 087), an orally bioavailable, multi-kinase inhibitor with potent pan-FGFR activity, has shown preliminary therapeutic activity against FGFR2 fusion-positive iCCA