Network traffic analysis for threats detection in the Internet of Things

As the prevalence of the Internet of Things (IoT) continues to increase, cyber criminals are quick to exploit the security gaps that many devices are inherently designed with. Users cannot be expected to tackle this threat alone, and many current solutions available for network monitoring are simply not accessible or can be difficult to implement for the average user, which is a gap that needs to be addressed. This article presents an effective signature-based solution to monitor, analyze, and detect potentially malicious traffic for IoT ecosystems in the typical home network environment by utilizing passive network sniffing techniques and a cloud application to monitor anomalous activity. The proposed solution focuses on two attack and propagation vectors leveraged by the infamous Mirai botnet, namely DNS and Telnet. Experimental evaluation demonstrates the proposed solution can detect 98.35 percent of malicious DNS traffic and 99.33 percent of Telnet traffic for an overall detection accuracy of 98.84 percent

p-n junction heterostructure device physics model of a four junction solar cell

We present results from a p-n junction device physics model for GaInP/GaAs/GaInAsP/GaInAs four junction solar cells. The model employs subcells whose thicknesses have an upper bound of 5μm and lower bound of 200nm, which is just above the fully depleted case for the assumed doping of N_A = 1 x 10^(18) cm^(-3) and N_D = 1 x 10^(17) cm^(-3). The physical characteristics of the cell model include: free carrier absorption, temperature and doping effects on carrier mobility, as well as recombination via Shockley-Read-Hall recombination from a single midgap trap level and surface recombination. Upper bounds on cell efficiency set by detailed balance calculations can be approached by letting the parameters approach ideal conditions. However whereas detailed balance calculations always benefit from added subcells, the current matching requirements for series connected p-n multi-junctions indicate a minimum necessary performance from an added subcell to yield a net increase in overall device efficiency. For the four junction cell considered here, optimizing the subcell thickness is an important part of optimizing the efficiency. Series resistance limitations for concentrator applications can be systematically explored for a given set of subcells. The current matching limitation imposed by series connection reduces efficiency relative to independently-connected cells. The overall trend indicates an approximately 5% drop in efficiency for series connected cells relative to identical independently connected cells. The series-connected devices exhibit a high sensitivity to spectral changes and individual subcell performance. If any single subcell within the series-connected device is degraded relative to its optimal design, the entire device is severely hindered. This model allows complex heterostructure solar cell structures to be evaluated by providing device physics-based predictions of performance limitations

A Phase Diagram of Low Temperature Epitaxial Silicon Grown by Hot-wire Chemical Vapor Deposition for Photovoltaic Devices

We have investigated the low-temperature epitaxial growth of thin silicon films by hot-wire chemical vapor deposition (HWCVD). Using reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM), we have found conditions for epitaxial growth at low temperatures achieving twinned epitaxial growth up to 6.8 µm on Si(100) substrates at a substrate temperature of 230°C. This opens the possibility of growing high quality films on low cost substrates. The H_2:SiH_4 dilution ratio was set to 50:1 for all growths. Consistent with previous results, the epitaxial thickness is found to decrease with an increase in the substrate temperature

Outdoor performance of a thin-film gallium-arsenide photovoltaic module

We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather

p-n junction heterostructure device physics model of a four junction solar cell

We present results from a p-n junction device physics model for GaInP/GaAs/GaInAsP/GaInAs four junction solar cells. The model employs subcells whose thicknesses have an upper bound of 5μm and lower bound of 200nm, which is just above the fully depleted case for the assumed doping of N_A = 1 x 10^(18) cm^(-3) and N_D = 1 x 10^(17) cm^(-3). The physical characteristics of the cell model include: free carrier absorption, temperature and doping effects on carrier mobility, as well as recombination via Shockley-Read-Hall recombination from a single midgap trap level and surface recombination. Upper bounds on cell efficiency set by detailed balance calculations can be approached by letting the parameters approach ideal conditions. However whereas detailed balance calculations always benefit from added subcells, the current matching requirements for series connected p-n multi-junctions indicate a minimum necessary performance from an added subcell to yield a net increase in overall device efficiency. For the four junction cell considered here, optimizing the subcell thickness is an important part of optimizing the efficiency. Series resistance limitations for concentrator applications can be systematically explored for a given set of subcells. The current matching limitation imposed by series connection reduces efficiency relative to independently-connected cells. The overall trend indicates an approximately 5% drop in efficiency for series connected cells relative to identical independently connected cells. The series-connected devices exhibit a high sensitivity to spectral changes and individual subcell performance. If any single subcell within the series-connected device is degraded relative to its optimal design, the entire device is severely hindered. This model allows complex heterostructure solar cell structures to be evaluated by providing device physics-based predictions of performance limitations

Network Traffic Analysis for Threats Detection in the Internet of Things

As the prevalence of the Internet of Things (IoT) continues to increase, cyber criminals are quick to exploit the security gaps that many devices are inherently designed with. Whilst users can not be expected to tackle this threat alone, many current solutions available for network monitoring are simply not accessible or can be difficult to implement for the average user and is a gap that needs to be addressed. This paper presents an effective signature-based solution to monitor, analyse and detect potentially malicious traffic for IoT ecosystems in the typical home network environment by utilising passive network sniffing techniques and a cloud-application to monitor anomalous activity. The proposed solution focuses on two attack and propagation vectors leveraged by the infamous Mirai botnet, namely DNS and Telnet. Experimental evaluation demonstrates the proposed solution can detect 98.35% of malicious DNS traffic and 99.33% of Telnet traffic respectively; for an overall detection accuracy of 98.84%

Versatile control of metal-assisted chemical etching for vertical silicon microwire arrays and their photovoltaic applications

A systematic study was conducted into the use of metal-assisted chemical etching (MacEtch) to fabricate vertical Si microwire arrays, with several models being studied for the efficient redox reaction of reactants with silicon through a metal catalyst by varying such parameters as the thickness and morphology of the metal film. By optimizing the MacEtch conditions, high-quality vertical Si microwires were successfully fabricated with lengths of up to 23.2 mu m, which, when applied in a solar cell, achieved a conversion efficiency of up to 13.0%. These solar cells also exhibited an open-circuit voltage of 547.7 mV, a short-circuit current density of 33.2 mA/cm(2), and a fill factor of 71.3% by virtue of the enhanced light absorption and effective carrier collection provided by the Si microwires. The use of MacEtch to fabricate high-quality Si microwires therefore presents a unique opportunity to develop cost-effective and highly efficient solar cells.open1