Structural Study of Binary Phosphate Glasses by X-ray and Neutron Diffraction

X-ray and neutron diffraction study on the structure of five binary metaphosphate glasses has been made by applying the pair function method coupled with the interference function refining technique. The distances and coordination numbers for the pairs of P-O, O-O and M-O (M=Li, Na, Zn, Mg, and Ca) were determined and a fundamental local ordering unit structure in these binary phosphate glasses has been confirmed to be a PO_4 tetrahedron and the particular features have also been recognized with respect to the numbers of oxygens around magnesium and zinc cations

Accurate large-signal equivalent circuit of surface channel diamond FETs based on the Chalmers model

The paper presents a large-signal nonlinear circuit-oriented model for polycrystalline and single-crystal H-terminated diamond MESFETs implemented within the Agilent ADS design suite. The DC characteristics of such devices suggest that the channel free charge control law may be modeled using the same strategy adopted for III-V HEMTs. For this reason, the well-known nonlinear Chalmers (Angelov) circuit model was chosen as the starting point for the development of the present non-linear diamond MESFET model. Model fitting was performed against DC and multibias small signal measurements, with good agreement. Model validations versus large-signal (power) measurements point out the accuracy of the proposed approach to simulate the behavior of H-terminated diamond MESFETs under large-signal operatio

Gene name errors: Lessons not learned

Erroneous conversion of gene names into other dates and other data types has been a frustration for computational biologists for years. We hypothesized that such errors in supplementary files might diminish after a report in 2016 highlighting the extent of the problem. To assess this, we performed a scan of supplementary files published in PubMed Central from 2014 to 2020. Overall, gene name errors continued to accumulate unabated in the period after 2016. An improved scanning software we developed identified gene name errors in 30.9% (3,436/11,117) of articles with supplementary Excel gene lists; a figure significantly higher than previously estimated. This is due to gene names being converted not just to dates and floating-point numbers, but also to internal date format (five-digit numbers). These findings further reinforce that spreadsheets are ill-suited to use with large genomic dat

Reduction of dislocation densities in single crystal CVD diamond by confinement in the lateral sector

International audienc

Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

We demonstrate the epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy. We prepared patterned SiO2 masks on a (0001) α-Ga2O3/sapphire template, and then α-Ga2O3 islands were regrown selectively on the mask windows. The islands grew vertically and laterally to coalesce with each other. Facet control of the α-Ga2O3 islands was achieved by controlling the growth temperature, and inclined facets developed by decreasing the temperature. Transmission electron microscopy revealed that the crystal quality of the regrown α-Ga2O3 was improved owing to both the blocking of dislocations by the mask and the dislocation bending by the inclined facets