Terahertz Radiation Detection by Field Effect Transistor in Magnetic Field

We report on terahertz radiation detection with InGaAs/InAlAs Field Effect Transistors in quantizing magnetic field. The photovoltaic detection signal is investigated at 4.2 K as a function of the gate voltage and magnetic field. Oscillations analogous to the Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance, are observed. The results are quantitatively described by a recent theory, showing that the detection is due to rectification of the terahertz radiation by plasma waves related nonlinearities in the gated part of the channel.Comment: 4 pages, 3 figure

Proceedings of the XXXVI International School of Semiconducting Compounds

The new approach to the understanding of intrashallow donor transition in the reduced dimensionality systems is presented. The magnetospectroscopy experiments done on the CdTe/CdMgTe quantum well based samples, uniformly n-doped, show indications that the surprising lack of spectral sensitivity on applied photon energy can be understood as a result of sample response coming from its different regions. This "non spectroscopic" behaviour (in a sense of the Zeeman splitting) is a consequence of the properties of systems with reduced dimensionality where variety of centre locations in the structure results in continuous density of states available for absorption

Field effect transistors for terahertz detection - silicon versus III–V material issue

International audienceResonant frequencies of the two-dimensional plasma in FETs reach the THz range for nanometer transistor channels. Non-linear properties of the electron plasma are responsible for detection of THz radiation with FETs. Resonant excitation of plasma waves with sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature, plasma oscillations are usually over-damped, but the FETs can still operate as efficient broadband THz detectors. The paper presents the main theoretical and experimental results on detection with FETs stressing their possible THz imaging applications. We discuss advantages and disadvantages of application of III-V GaAs and GaN HEMTs and silicon MOSFETs

Optical limiting efficiency of an electroactive bis-iminopyridine ligand and its zinc complex

An electroactive based bis-iminopyridine ligand has been synthesized by a condensation reaction between (4-(6,7-dimethyldithio-tetrathiafulvalene)-aniline) with 2,6-diformylpyridine. The complexation of this ligand with ZnCl2 afforded a tetrahedral neutral Zinc metal complex. Nonlinear optical measurements of these structures have given good results in picosecond regime. The nonlinear absorption of the ligand was significantly enhanced upon complexation with ZnCl2. This prompted us to conduct the experiment of optical limiting at wavelength 532nm. The nonlinear absorption properties of these structures were studied and compared to the reference material C60

Dependence of the Third Order Nonlinear Optical Susceptibility on Concentration and Peripheral Substituent of Metallophthalocyanines

Third order nonlinear optical properties of metallophthalocyanines (MPcs) were investigated using degenerate four wave mixing (DFWM) method. We also studied how the replacement of peripheral substituent around the MPcs cores correlates with nonlinear optical properties. Therefore third order nonlinear optical susceptibilities (χ<3>) of MPcs with liquid crystal (MPcs-LC) were investigated. We found that the χ<3> values of MPcs-LC increase in comparison with the corresponding values of MPcs. We supposed that this is caused by the increase of the charge transfer effects and change of the dipole moments of the molecule with the increase of molecules dimension

Optical limiting efficiency of an electroactive bis-iminopyridine ligand and its zinc complex

An electroactive based bis-iminopyridine ligand has been synthesized by a condensation reaction between (4-(6,7-dimethyldithio-tetrathiafulvalene)-aniline) with 2,6-diformylpyridine. The complexation of this ligand with ZnCl2 afforded a tetrahedral neutral Zinc metal complex. Nonlinear optical measurements of these structures have given good results in picosecond regime. The nonlinear absorption of the ligand was significantly enhanced upon complexation with ZnCl2. This prompted us to conduct the experiment of optical limiting at wavelength 532nm. The nonlinear absorption properties of these structures were studied and compared to the reference material C60

Standard and Embedded Solitons in Nematic Optical Fibers

A model for a non-Kerr cylindrical nematic fiber is presented. We use the multiple scales method to show the possibility of constructing different kinds of wavepackets of transverse magnetic (TM) modes propagating through the fiber. This procedure allows us to generate different hierarchies of nonlinear partial differential equations (PDEs) which describe the propagation of optical pulses along the fiber. We go beyond the usual weakly nonlinear limit of a Kerr medium and derive an extended Nonlinear Schrodinger equation (eNLS) with a third order derivative nonlinearity, governing the dynamics for the amplitude of the wavepacket. In this derivation the dispersion, self-focussing and diffraction in the nematic are taken into account. Although the resulting nonlinear $PDE$ may be reduced to the modified Korteweg de Vries equation (mKdV), it also has additional complex solutions which include two-parameter families of bright and dark complex solitons. We show analytically that under certain conditions, the bright solitons are actually double embedded solitons. We explain why these solitons do not radiate at all, even though their wavenumbers are contained in the linear spectrum of the system. Finally, we close the paper by making comments on the advantages as well as the limitations of our approach, and on further generalizations of the model and method presented.Comment: "Physical Review E, in press

Toward Predicting Success and Failure in CS2: A Mixed-Method Analysis

Factors driving success and failure in CS1 are the subject of much study but less so for CS2. This paper investigates the transition from CS1 to CS2 in search of leading indicators of success in CS2. Both CS1 and CS2 at the University of North Carolina Wilmington (UNCW) are taught in Python with annual enrollments of 300 and 150 respectively. In this paper, we report on the following research questions: 1) Are CS1 grades indicators of CS2 grades? 2) Does a quantitative relationship exist between CS2 course grade and a modified version of the SCS1 concept inventory? 3) What are the most challenging aspects of CS2, and how well does CS1 prepare students for CS2 from the student's perspective? We provide a quantitative analysis of 2300 CS1 and CS2 course grades from 2013--2019. In Spring 2019, we administered a modified version of the SCS1 concept inventory to 44 students in the first week of CS2. Further, 69 students completed an exit questionnaire at the conclusion of CS2 to gain qualitative student feedback on their challenges in CS2 and on how well CS1 prepared them for CS2. We find that 56% of students' grades were lower in CS2 than CS1, 18% improved their grades, and 26% earned the same grade. Of the changes, 62% were within one grade point. We find a statistically significant correlation between the modified SCS1 score and CS2 grade points. Students identify linked lists and class/object concepts among the most challenging. Student feedback on CS2 challenges and the adequacy of their CS1 preparations identify possible avenues for improving the CS1-CS2 transition.Comment: The definitive Version of Record was published in 2020 ACM Southeast Conference (ACMSE 2020), April 2-4, 2020, Tampa, FL, USA. 8 page

Terahertz Detection by the Entire Channel of High Electron Mobility Transistors

high electron mobility transistors were used as detectors of THz electromagnetic radiation at liquid helium temperatures. Application of high magnetic fields led to the Shubnikov-de Haas oscillations of the detection signal. Measurements carried out with a simultaneous modulation of the intensity of the incident THz beam and the transistor gate voltage showed that the detection signal is determined by the electron plasma both in the gated and ungated parts of the transistor channel. This result is of importance for understanding the physical mechanism of the detection in high electron mobility transistors and for development of a proper theoretical description of this process