Adaptation of various maize hybrids when grown for biomass

Received: January 10th, 2022 ; Accepted: May 1st, 2022 ; Published: May 10th, 2022 ; Correspondence: [email protected] aim of this research is to optimize growth and development of maize for biomass by selecting maize hybrids to fulfill their productivity potential. The following maize hybrids were the subject of research: Forteza, DM Native, DM Skarb. The greatest height of plants was formed in the interphase period of milk-wax maturity of grain in hybrid Forteza - 286.4 cm. In hybrid DM Native the height of plants was - 271.2 cm, hybrid DM Skarb - 263.6 cm. Weight of one plant of hybrids studied during the maize growing season ranged from 442 g to 760 g. Thus, the largest mass of maize plants was recorded in the milk-wax maturity stage. It was the largest at the hybrid Forteza and amounted to 760 g, that is more than at the hybrid DM Native for 3.4% (26 g) and at the hybrid DM Skarb for 6.6% (50 g). The average crop yield of the hybrid Forteza for the period of research was 55.1 t ha-1 . Hybrids DM Native and DM Skarb provided this indicator at the level of 50.6 and 45.7 t ha-1 respectively. Hybrid Forteza provided a maximum crop yield 55.1 t ha-1 with plant height 286.4 cm, assimilation surface of one plant and a crop 0.59 m2 ; 42.8 thousand m2 ha-1 and plant weight 760 g

Electroactivity of Al in Al-Doped ZnO Films

The report devoted to study the influence of Al content on its electroactivity in ZnO thin films. Al-doped ZnO thin films were deposited by growth method on silicon substrates. The set of ZnO:Al films with concentrations of Al in the range from 0.2 to 1.2 % were grown. For samples characterization, XRD, EDX analysis, atomic force microscopy and transmittance measurements were used. The temperature dependences of electrical resistivity and Hall coefficient were investigated

Raman and Photoluminescence Study of Al,N‐Codoped ZnO Films Deposited at Oxygen‐Rich Conditions by Magnetron Sputtering

Optical properties of as‐grown high nitrogen‐doped ZnO:Al,N films (with a variation of nitrogen concentration from 2.3 to 4.3 atomic %) are studied by Raman, photoluminescence, and Fourier‐transform infrared spectroscopy (FTIR). The intensity of mode A1LO, peaked at 580 cm−1, increases with increasing nitrogen concentration. The silent mode B1low at 275 cm−1 is clearly observed testifying increased disorder‐activated scattering in ZnO. Photoluminescence spectra reveal near‐band edge emission as well as several defect‐related bands, the intensity of which increases with nitrogen content. The blue band (2.61 eV) can be related to the transition from shallow donor level to deep nitrogen acceptor level. Also, incorporation of nitrogen in ZnO lattice causes appearance of both Zni and Oi defects responsible for violet (3.08 eV) and yellow (2.16 eV) emission band, respectively. At the same time near‐band edge emission of ZnO:Al,N films is not suppressed by simultaneously introduced Al and N impurities. Al compensates distortions in ZnO crystal lattice caused by nitrogen doping and, thus, stabilizes near‐band edge emissio