The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation

The thickness increase of gallium nitride (GaN) cap layer from 2 nm to 35 nm to achieve an enhancement mode GaN MIS-HEMT (Metal-Insulator-Semiconductor High-Electron-Mobility Transistor) with a threshold voltage (Vth) of +0.5 V is studied using TCAD simulations. The simulations are calibrated to measured I-V characteristics of the 1 μm gate length GaN MIS-HEMT with the 2 nm thick GaN cap. A good agreement at low and high drain voltages (VDS=1 V and 5 V) between simulations and measurements is achieved by using a quantum-corrected drift-diffusion transport model. The enhancement mode GaN MIS-HEMT with a GaN cap thickness of 35 nm achieves Vth = + 0.5 V thanks to positive interface traps occurring between the SiN passivation layer and the GaN cap as reported experimentally. The simulations indicate that a parasitic channel is created at the interface between the SiN layer and the 35 nm GaN cap. Our study also shows an increase in the breakdown voltage from 100 V to 870 V when a thickness of the GaN cap layer increases from 15 nm to 35 nm

The Glauber model and the heavy ion reaction cross section

We reexamine the Glauber model and calculate the total reaction cross section as a function of energy in the low and intermediate energy range, where many of the corrections in the model, are effective. The most significant effect in this energy range is by the modification of the trajectory due to the Coulomb field. The modification in the trajectory due to nuclear field is also taken into account in a self consistent way. The energy ranges in which particular corrections are effective, are quantified and it is found that when the center of mass energy of the system becomes 30 times the Coulomb barrier, none of the trajectory modification to the Glauber model is really required. The reaction cross sections for light and heavy systems, right from near coulomb barrier to intermediate energies have been calculated. The exact nuclear densities and free nucleon-nucleon (NN) cross sections have been used in the calculations. The center of mass correction which is important for light systems, has also been taken into account. There is an excellent agreement between the calculations with the modified Glauber model and the experimental data. This suggests that the heavy ion reactions in this energy range can be explained by the Glauber model in terms of free NN cross sections without incorporating any medium modification.Comment: RevTeX, 21 pages including 9 Postscript figures, submitted to Phys. Rev.

WGS-based telomere length analysis in Dutch family trios implicates stronger maternal inheritance and a role for RRM1 gene

Telomere length (TL) regulation is an important factor in ageing, reproduction and cancer development. Genetic, hereditary and environmental factors regulating TL are currently widely investigated, however, their relative contribution to TL variability is still understudied. We have used whole genome sequencing data of 250 family trios from the Genome of the Netherlands project to perform computational measurement of TL and a series of regression and genome-wide association analyses to reveal TL inheritance patterns and associated genetic factors. Our results confirm that TL is a largely heritable trait, primarily with mother’s, and, to a lesser extent, with father’s TL having the strongest influence on the offspring. In this cohort, mother’s, but not father’s age at conception was positively linked to offspring TL. Age-related TL attrition of 40 bp/year had relatively small influence on TL variability. Finally, we have identified TL-associated variations in ribonuclease reductase catalytic subunit M1 (RRM1 gene), which is known to regulate telomere maintenance in yeast. We also highlight the importance of multivariate approach and the limitations of existing tools for the analysis of TL as a polygenic heritable quantitative trait

Skewed X-inactivation is common in the general female population

X-inactivation is a well-established dosage compensation mechanism ensuring that X-chromosomal genes are expressed at comparable levels in males and females. Skewed X-inactivation is often explained by negative selection of one of the alleles. We demonstrate that imbalanced expression of the paternal and maternal X-chromosomes is common in the general population and that the random nature of the X-inactivation mechanism can be sufficient to explain the imbalance. To this end, we analyzed blood-derived RNA and whole-genome sequencing data from 79 female children and their parents from the Genome of the Netherlands project. We calculated the median ratio of the paternal over total counts at all X-chromosomal heterozygous single-nucleotide variants with coverage ≥10. We identified two individuals where the same X-chromosome was inactivated in all cells. Imbalanced expression of the two X-chromosomes (ratios ≤0.35 or ≥0.65) was observed in nearly 50% of the population. The empirically observed skewing is explained by a theoretical model where X-inactivation takes place in an embryonic stage in which eight cells give rise to the hematopoietic compartment. Genes escaping X-inactivation are expressed from both alleles and therefore demonstrate less skewing than inactivated genes. Using this characteristic, we identified three novel escapee genes (SSR4, REPS2, and SEPT6), but did not find support for many previously reported escapee genes in blood. Our collective data suggest that skewed X-inactivation is common in the general population. This may contribute to manifestation of symptoms in carriers of recessive X-linked disorders. We recommend that X-inactivation results should not be used lightly in the interpretation of X-linked variants

Top-down ZnO nanowire field effect transistors for logic circuit applications

ZnO nanowire transistors have shown a great potential in gas and chemical sensing, high power IC, short wavelength photodetector and light emitting applications. This is due to ZnO excellent semiconducting properties of high bulk mobility, large bandgap of 3.4eV and optical transparency from visible to mid-infra red spectrum. There are two approaches to realise ZnO nanowires; bottom-up and top-down. Bottom-up fabricated ZnO nanowire transistors exhibit a high mobility > 1000 cm2/V.s and large output drain current but device electrical performance is difficult to reproduce due to size variation and material quality. Therefore, a top-down fabrication approach is an attractive option since nanowire properties and size can be controlled by process parameters. In this work, we propose a top-down fabrication approach to produce nanowires using a combined photolithography, atomic layer deposition and anisotropic plasma etching technology. ZnO nanowires were fabricated on 150mm diameter SiO2-Si wafer with a dimension of 40nm x 38nm. The nanowires are made into field-effect transistors with a channel length from 1.3um to 18.6µm to study channel scaling. Preliminary electrical measurements give field-effect mobility of 0.5 cm2/V.s to 3 cm2/V.s and Ion/Ioff of 2×106. We anticipate mobility improvement by 3 times through passivation of the nanowire surface thanks to reduction of donor and surface traps with potential for logic circuits in display applications