Non-divergent pseudo-potential treatment of spin-polarized fermions under 1D and 3D harmonic confinement

Atom-atom scattering of bosonic one-dimensional (1D) atoms has been modeled successfully using a zero-range delta-function potential, while that of bosonic 3D atoms has been modeled successfully using Fermi-Huang's regularized s-wave pseudo-potential. Here, we derive the eigenenergies of two spin-polarized 1D fermions under external harmonic confinement interacting through a zero-range potential, which only acts on odd-parity wave functions, analytically. We also present a divergent-free zero-range potential treatment of two spin-polarized 3D fermions under harmonic confinement. Our pseudo-potential treatments are verified through numerical calculations for short-range model potentials.Comment: 9 pages, 4 figures (subm. to PRA on 03/15/2004

Using level-2 fuzzy sets to combine uncertainty and imprecision in fuzzy regions

In many applications, spatial data need to be considered but are prone to uncertainty or imprecision. A fuzzy region - a fuzzy set over a two dimensional domain - allows the representation of such imperfect spatial data. In the original model, points of the fuzzy region where treated independently, making it impossible to model regions where groups of points should be considered as one basic element or subregion. A first extension overcame this, but required points within a group to have the same membership grade. In this contribution, we will extend this further, allowing a fuzzy region to contain subregions in which not all points have the same membership grades. The concept can be used as an underlying model in spatial applications, e.g. websites showing maps and requiring representation of imprecise features or websites with routing functions needing to handle concepts as walking distance or closeby

A Hybrid model for the origin of photoluminescence from Ge nanocrystals in SiO2_2 matrix

In spite of several articles, the origin of visible luminescence from germanium nanocrystals in SiO$_2$ matrix is controversial even today. Some authors attribute the luminescence to quantum confinement of charge carriers in these nanocrystals. On the other hand, surface or defect states formed during the growth process, have also been proposed as the source of luminescence in this system. We have addressed this long standing query by simultaneous photoluminescence and Raman measurements on germanium nanocrystals embedded in SiO$_2$ matrix, grown by two different techniques: (i) low energy ion-implantation and (ii) atom beam sputtering. Along with our own experimental observations, we have summarized relevant information available in the literature and proposed a \emph{Hybrid Model} to explain the visible photoluminescence from nanocrystalline germanium in SiO$_2$ matrix.Comment: 23 pages, 8 figure

Chemical Composition of the Stem Oil of Aristolochia indica L.

Essential oil from dry matured stem of Aristolochia indica Linn. family Aristolochiaceae was investigated by GC and GC/MS. A total of 15 compounds were identified, representing 91.2% of the total oil. The major constituents of oil were trans-pinocarveol (24.2%), a-pinene (16.4%) and pinocarvone (14.2%)

Properties of silicon dioxide layers with embedded metal nanocrystals produced by oxidation of Si:Me mixture

A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing. The kinetics of the film oxidation and the structural properties of the prepared samples were investigated by Rutherford backscattering spectrometry, and transmission electron microscopy, respectively. The electrical properties of the selected SiO2:Me nanocomposite films were evaluated by measuring C-V and I-V characteristics on a metal-oxide-semiconductor stack. It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix. Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves