Status of UCN Source at WWR-M Reactor

The WWR-M reactor at PNPI is going to be equipped with an ultacold neutron source of high density. Method of UCN production is based on their accumulation in the super fluid helium due to particular qualities of that quantum liquid. The possibility of maintaining the temperature T = 1.371K with a thermal load of P = 60W was shown experimentally, while the theoretical load is expected to be P=30W. The project envisages the installation on UCN beams the experimental setups of various research projects such as searching for the nEDM, measure the neutron lifetime, and the observation of neutron to antineutron oscillation. In addition to UCN beams, three beams of cold and verycold neutrons are planned. Six experimental setups will be installed on these beams. At present, a vacuum container of the UCN source has been manufactured and the manufacture of low-temperature deuterium and helium parts of the source has been started

Zinc-Regulated DNA Binding of the Yeast Zap1 Zinc-Responsive Activator

The Zap1 transcription factor of Saccharomyces cerevisiae plays a central role in zinc homeostasis by controlling the expression of genes involved in zinc metabolism. Zap1 is active in zinc-limited cells and repressed in replete cells. At the transcriptional level, Zap1 controls its own expression via positive autoregulation. In addition, Zap1's two activation domains are regulated independently of each other by zinc binding directly to those regions and repressing activation function. In this report, we show that Zap1 DNA binding is also inhibited by zinc. DMS footprinting showed that Zap1 target gene promoter occupancy is regulated with or without transcriptional autoregulation. These results were confirmed using chromatin immunoprecipitation. Zinc regulation of DNA binding activity mapped to the DNA binding domain indicating other parts of Zap1 are unnecessary for this control. Overexpression of Zap1 overrode DNA binding regulation and resulted in constitutive promoter occupancy. Under these conditions of constitutive binding, both the zinc dose response of Zap1 activity and cellular zinc accumulation were altered suggesting the importance of DNA binding control to zinc homeostasis. Thus, our results indicated that zinc regulates Zap1 activity post-translationally via three independent mechanisms, all of which contribute to the overall zinc responsiveness of Zap1

Adolescent deviation and age

Traditional theories of delinquency causation generally fail to consider delinquency in the context of norms and age-role transitions peculiar to adolescence. Hence, in this study, an age-based theory of delinquency causation is developed, which assumes the importance of norms and roles specific to adolescence. This theory draws upon the assumption that socialization is recurrent, in contrast to the premises regarding socialization which underlie traditional theories of adolescent deviance. The recurrent model of socialization and that assumed by traditional theorists are discussed, and their implications for the causes of delinquent behavior are examined. Some effort is made to show that the recurrent model of socialization suggests an anomie of age as the basis for delinquent acts. It is suggested that this age-based anomie stems from conditions of normlessness associated with certain role transitions in adolescence and the pacing of these transitions. Further, it is suggested that certain groups are especially prone to an anomic age transition. The role transitions most likely to be subject to such anomic conditions and the adolescent subgroups most prone to experience anomie as a result of the pacing of their age-role transitions are identified .Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/45260/1/10964_2005_Article_BF01537174.pd

Immobilization of Escherichia coli RNA Polymerase and Location of Binding Sites by Use of Chromatin Immunoprecipitation and Microarrays

The genome-wide location of RNA polymerase binding sites was determined in Escherichia coli using chromatin immunoprecipitation and microarrays (chIP-chip). Cross-linked chromatin was isolated in triplicate from rifampin-treated cells, and DNA bound to RNA polymerase was precipitated with an antibody specific for the β′ subunit. The DNA was amplified and hybridized to “tiled” oligonucleotide microarrays representing the whole genome at 25-bp resolution. A total of 1,139 binding sites were detected and evaluated by comparison to gene expression data from identical conditions and to 961 promoters previously identified by established methods. Of the detected binding sites, 418 were located within 1,000 bp of a known promoter, leaving 721 previously unknown RNA polymerase binding sites. Within 200 bp, we were able to detect 51% (189/368) of the known σ70-specific promoters occurring upstream of an expressed open reading frame and 74% (273/368) within 1,000 bp. Conversely, many known promoters were not detected by chIP-chip, leading to an estimated 26% negative-detection rate. Most of the detected binding sites could be associated with expressed transcription units, but 299 binding sites occurred near inactive transcription units. This map of RNA polymerase binding sites represents a foundation for studies of transcription factors in E. coli and an important evaluation of the chIP-chip technique

0.2-mu m AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al2O3 Passivation

We report a successful application of atomic layer deposition (ALD) aluminum oxide as a passivation layer to gallium nitride high electron-mobility transistors (HEMTs). This new passivation process results in 8%-10% higher dc maximum drain current and maximum extrinsic transconductance, about one order of magnitude lower drain current in the subthreshold region, 10%-20% higher pulsed-IV drain current, and 27%-30% higher RF power with simultaneously 5-8 percentage point higher power-added efficiency. The achieved improvement in device performance is attributed to the outstanding quality of the interface between III-N and the ALD aluminum oxide resulting from the uniqueness of the adopted ALD process, featuring a wet-chemical-based wafer preparation as well as a pregrowth self-cleaning procedure in the growth chamber. This technology can be readily integrated into the HEMT-based integrated circuit fabrication process, making the ALD aluminum oxide-passivated GaN HEMTs excellent candidates for multiple microwave and millimeter-wave power applications