Interfacial chemical bonding-mediated ionic resistive switching.

In this paper, we present a unique resistive switching (RS) mechanism study of Pt/TiO2/Pt cell, one of the most widely studied RS system, by focusing on the role of interfacial bonding at the active TiO2-Pt interface, as opposed to a physico-chemical change within the RS film. This study was enabled by the use of a non-conventional scanning probe-based setup. The nanoscale cell is formed by bringing a Pt/TiO2-coated atomic force microscope tip into contact with a flat substrate coated with Pt. The study reveals that electrical resistance and interfacial bonding status are highly coupled together. An oxygen-mediated chemical bonding at the active interface between TiO2 and Pt is a necessary condition for a non-polar low-resistance state, and a reset switching process disconnects the chemical bonding. Bipolar switching mode did not involve the chemical bonding. The nature of chemical bonding at the TiO2-metal interface is further studied by density functional theory calculations

Ferromagnetism in Mn-doped Chalcopyrite AlGaP2 Semiconductor

The electronic property and the magnetism of AlGaMnP2 compound by 3.125 %, 6.25 %, and 9.375 % Mn concentrations were investigated using the first-principles calculations. The Mn-doped AlGaP2 chalcopyrite with or without defect of Al, Ga, or P atom yields a strong half-metallic ground state. The ferromagnetic state is the most energetically favorable one. The spin-polarization of Mn dopant is stable with a magnetic moment close to 4μB due to intra-atomic exchange coupling. The states of host Al, Ga, or P atoms at the Fermi level are mainly a P-3p character, which mediates a strong interaction between the Mn-3d and P-3p states. The ferromagnetic state with high magnetic moment is originated from the hybridized P(3p)-Mn(3d)-P(3p) interaction formed through the p-d coupling without the defects. It is noted that the ferromagnetism arises from two distinguishing characteristics by polarons and by holes-mediated exchange-coupling

Long-time behavior towards viscous-dispersive shock for Navier-Stokes equations of Korteweg type

We consider the so-called Naiver-Stokes-Korteweg(NSK) equations for the dynamics of compressible barotropic viscous fluids with internal capillarity. We handle the time-asymptotic stability in 1D of the viscous-dispersive shock wave that is a traveling wave solution to NSK as a viscous-dispersive counterpart of a Riemann shock. More precisely, we prove that when the prescribed far-field states of NSK are connected by a single Hugoniot curve, then solutions of NSK tend to the viscous-dispersive shock wave as time goes to infinity. To obtain the convergence, we extend the theory of $a$-contraction with shifts, used for the Navier-Stokes equations, to the NSK system. The main difficulty in analysis for NSK is due to the third-order derivative terms of the specific volume in the momentum equation. To resolve the problem, we introduce an auxiliary variable that is equivalent to the derivative of the specific volume

IT Investment Portfolio for Mobile Office

The adoption of mobile office is a topic that has been researched for many years due to rapid growth in the use of wireless communication and portable devices. Yet within the vast territory of studies of the IT investment portfolio for mobile office there remains a large piece of uncharted terrain. The aim of this article is to empirically examine the IT investment portfolio framework, with an emphasis on mobile office environment. Using theoretical framework of IT investment portfolio, our hypotheses concerned the effect of IT investment portfolio on the performance of mobile business service moderated by mobile savvy. To measure mobile office performance and mobile savvy, we conducted the survey with a total of 127 participants