Study of 0-π\pi phase transition in hybrid superconductor-InSb nanowire quantum dot devices

Hybrid superconductor-semiconducting nanowire devices provide an ideal platform to investigating novel intragap bound states, such as the Andreev bound states (ABSs), Yu-Shiba-Rusinov (YSR) states, and the Majorana bound states. The competition between Kondo correlations and superconductivity in Josephson quantum dot (QD) devices results in two different ground states and the occurrence of a 0-$\pi$ quantum phase transition. Here we report on transport measurements on hybrid superconductor-InSb nanowire QD devices with different device geometries. We demonstrate a realization of continuous gate-tunable ABSs with both 0-type levels and $\pi$-type levels. This allow us to manipulate the transition between 0 and $\pi$ junction and explore charge transport and spectrum in the vicinity of the quantum phase transition regime. Furthermore, we find a coexistence of 0-type ABS and $\pi$-type ABS in the same charge state. By measuring temperature and magnetic field evolution of the ABSs, the different natures of the two sets of ABSs are verified, being consistent with the scenario of phase transition between the singlet and doublet ground state. Our study provides insights into Andreev transport properties of hybrid superconductor-QD devices and sheds light on the crossover behavior of the subgap spectrum in the vicinity of 0-$\pi$ transition

Low-field magnetotransport in graphene cavity devices

Confinement and edge structures are known to play significant roles in electronic and transport properties of two-dimensional materials. Here, we report on low-temperature magnetotransport measurements of lithographically patterned graphene cavity nanodevices. It is found that the evolution of the low-field magnetoconductance characteristics with varying carrier density exhibits different behaviors in graphene cavity and bulk graphene devices. In the graphene cavity devices, we have observed that intravalley scattering becomes dominant as the Fermi level gets close to the Dirac point. We associate this enhanced intravalley scattering to the effect of charge inhomogeneities and edge disorder in the confined graphene nanostructures. We have also observed that the dephasing rate of carriers in the cavity devices follows a parabolic temperature dependence, indicating that the direct Coulomb interaction scattering mechanism governs the dephasing at low temperatures. Our results demonstrate the importance of confinement in carrier transport in graphene nanostructure devices.Comment: 13 pages, 5 figure

Field study on the influence of spatial and environmental characteristics on the evaluation of subjective loudness and acoustic comfort in underground shopping streets

A large-scale measurement and subjective survey was undertaken in five underground shopping streets to determine the influence of spatial and environmental characteristics on users’ subjective loudness and acoustic comfort. The analysis on the spatial characteristics shows that the subjective loudness is higher in “street type” than in “square type” underground shopping streets when the equivalent continuous A-weighted sound pressure level (LAeq) is relatively high (75 dBA). Acoustic comfort is higher in “square type” than in “street type” underground shopping streets where LAeq is relatively low (55 dBA). Considering spatial functions, it is found that acoustic comfort is higher in a dining area than in a shopping area. In terms of environmental characteristics where air temperature, relative humidity, luminance and visual aspect were considered, the subjective loudness is influenced by humidity and luminance, with correlation coefficients of 0.10 to 0.30. The evaluation of acoustic comfort is influenced by air temperature, humidity, and luminance, with correlation coefficients of 0.1 to 0.4. There are significant correlations between the evaluation of environmental factors and subjective loudness, as well as, acoustic comfort. The correlation coefficients are 0.1 to 0.5. Moreover, respondents’ attitude to sound environment could influence their evaluation of subjective loudness and acoustic comfort

Effects of individual sound sources on the subjective loudness and acoustic comfort in underground shopping streets

Previous studies have demonstrated that human evaluation of subjective loudness and acoustic comfort depends on a series of factors in a particular situation rather than only on sound pressure levels. In the present study, a large-scale subjective survey has been undertaken on underground shopping streets in Harbin, China, to determine how individual sound sources influence subjective loudness and acoustic comfort evaluation. Based on the analysis of case study results, it has been shown that all individual sound sources can increase subjective loudness to a certain degree. However, their levels of influence on acoustic comfort are different. Background music and the public address system can increase acoustic comfort, with a mean difference of 0.18 to 0.32 and 0.21 to 0.27, respectively, where a five-point bipolar category scale is used. Music from shops and vendor shouts can decrease acoustic comfort, with a mean difference of -0.11 to -0.38 and -0.39 to -0.62, respectively. The feasibility of improving acoustic comfort by changing certain sound sources is thus demonstrated

Schottky barrier and contact resistance of InSb nanowire field effect transistors

Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, to individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height $\Phi_{\rm{SB}}\sim20\ \rm{meV}$ is present at the metal-InSb NW interfaces and its effective height is gate tunable. The contact resistance ($R_{\rm{c}}$) in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that $R_{\rm{c}}$ at on-state exhibits a pronounced magnetic field dependent feature, namely it is increased strongly with increasing magnetic field after an onset field $B_{\rm{c}}$. A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide a solid experimental evidence for the presence of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW based nanoelectronic devices and quantum devices.Comment: 12 pages, 4 figure

Formation of Long Single Quantum Dots in High Quality InSb Nanowires Grown by Molecular Beam Epitaxy

We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO$_2$ substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ~700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Land\'e g-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ~300 $\mu$eV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.Comment: 19 pages, 5 figure

Antioxidantactivity In Vitro And Hepatoprotective Effect Of Phlomis Maximowiczii In Vivo

Background: Anumber of medicinal plants and there compounds played a major role in the treatment of hepatic disorders. They were widely used for the treatment of these disorders, and oxidant stress injury was one of the liver injury mechanisms. The present study evaluated the antioxidant activity and the hepatoprotective effect of each extracts of Phlomis maximowiczii.Materials and Methods: The antioxidant activity was assayed by the methods of ABTS, FRAP and DPPH in vitro. Hepatoprotective effect of P. maximowiczii extracts was examined using carbon tetrachloride-induced acute liver injury in mice.Results: P. maximowiczii n-butanol (PMBU) extract, ABTS (IC50=18.96 μg/mL), DPPH (IC50=25.15 μg/mL), and FRAP (RACT50=2775.6±144.18 μmol/g), showed higher scavenging capacity than that of P. maximowiczii ethyl acetate (PMEA). The n-butanol extract could significantly reduce the level of GPT, GOT and MDA (P<0.05, P<0.001 and P<0.001, respectively) and increase the level of SOD (P<0.001), respectively.Conclusion: The antioxidant activity of n-butanol extract in vitro was related with the level ofMDAand SOD in vivo, and hepatoprotective effect of n-butanol extract also had relationship with its antioxidant activity in vivo.Key words: Phlomis maximowiczii, anti-oxidation, acute liver in jury, carbon tetrachloride

Nanoindentation Of Si Nanostructures: Buckling And Friction At Nanoscales

A nanoindentation system was employed to characterize mechanical properties of silicon nanolines (SiNLs), which were fabricated by an anisotropic wet etching (AWE) process. The SiNLs had the linewidth ranging from 24 nm to 90 nm, having smooth and vertical sidewalls and the aspect ratio (height/linewidth) from 7 to 18. During indentation, a buckling instability was observed at a critical load, followed by a displacement burst without a load increase, then a full recovery of displacement upon unloading. This phenomenon was explained by two bucking modes. It was also found that the difference in friction at the contact between the indenter and SiNLs directly affected buckling response of these nanolines. The friction coefficient was estimated to be in a range of 0.02 to 0.05. For experiments with large indentation displacements, irrecoverable indentation displacements were observed due to fracture of Si nanolines, with the strain to failure estimated to be from 3.8% to 9.7%. These observations indicated that the buckling behavior of SiNLs depended on the combined effects of load, line geometry, and the friction at contact. This study demonstrated a valuable approach to fabrication of well-defined Si nanoline structures and the application of the nanoindentation method for investigation of their mechanical properties at the nanoscale.Microelectronics Research Cente