10,424 research outputs found
Current perpendicular to plane Giant Magnetoresistance (GMR) in laminated nanostructures
We theoretically studied spin dependent electron transport
perpendicular-to-plain (CPP) in magnetic laminated multilayered structures by
using Kubo formalism. We took into account not only bulk scattering, but the
interface resistance due to both specular and diffuse reflection and also spin
conserving and spin-flip processes. It was shown that spin-flip scattering at
interfaces substantially reduces the value of GMR. This can explain the
experimental observations that the CPP GMR ratio for laminated structures only
slightly increases as compared to non-laminated ones despite lamination induces
a significant increase in CPP resistance.Comment: 4 pages, 2 figure
Hydrogenic Spin Quantum Computing in Silicon: A Digital Approach
We suggest an architecture for quantum computing with spin-pair encoded
qubits in silicon. Electron-nuclear spin-pairs are controlled by a dc magnetic
field and electrode-switched on and off hyperfine interaction. This digital
processing is insensitive to tuning errors and easy to model. Electron
shuttling between donors enables multi-qubit logic. These hydrogenic spin
qubits are transferable to nuclear spin-pairs, which have long coherence times,
and electron spin-pairs, which are ideally suited for measurement and
initialization. The architecture is scalable to highly parallel operation.Comment: 4 pages, 5 figures; refereed and published version with improved
introductio
Quantized Thermal Transport in the Fractional Quantum Hall Effect
We analyze thermal transport in the fractional quantum Hall effect (FQHE),
employing a Luttinger liquid model of edge states. Impurity mediated
inter-channel scattering events are incorporated in a hydrodynamic description
of heat and charge transport. The thermal Hall conductance, , is shown to
provide a new and universal characterization of the FQHE state, and reveals
non-trivial information about the edge structure. The Lorenz ratio between
thermal and electrical Hall conductances {\it violates} the free-electron
Wiedemann-Franz law, and for some fractional states is predicted to be {\it
negative}. We argue that thermal transport may provide a unique way to detect
the presence of the elusive upstream propagating modes, predicted for fractions
such as and .Comment: 6 pages REVTeX, 2 postscript figures (uuencoded and compressed
Corporate Taxation and International Charter Competition
Corporate charter competition has become an increasingly international phenomenon. The thesis of this Article is that this development in corporate law requires a greater focus on corporate tax law. We first demonstrate how a tax system\u27s capacity to distort the international charter market depends both upon its approach to determining corporate location and upon the extent to which it taxes foreign source corporate profits. We also show, however, that it is not possible to remove all distortions through modifications to the tax system alone. We present instead two alternative methods for preserving an international charter market. The first-best solution involves severing the markets for corporate law and corporate tax law through coordination of locational rules under each regime, with a place of incorporation rule for corporate law and a real seat rule for corporate tax. The second-best solution relies on a properly designed federal structure. The crucial design elements for such a federal system are the allocation of substantive law between the federal and subfederal levels, corporate and corporate tax locational rules, and the taxation of corporate migration and foreign source corporate profits. With due attention to these details, an international charter market can avoid the potentially distorting effects of corporate taxation. In the final part of the Article we apply our analysis to the United States, Canada, the European Union, and Israel, and show how difficult it is, in the real world, to separate corporate charter and corporate tax competition
Topological Insulators with Inversion Symmetry
Topological insulators are materials with a bulk excitation gap generated by
the spin orbit interaction, and which are different from conventional
insulators. This distinction is characterized by Z_2 topological invariants,
which characterize the groundstate. In two dimensions there is a single Z_2
invariant which distinguishes the ordinary insulator from the quantum spin Hall
phase. In three dimensions there are four Z_2 invariants, which distinguish the
ordinary insulator from "weak" and "strong" topological insulators. These
phases are characterized by the presence of gapless surface (or edge) states.
In the 2D quantum spin Hall phase and the 3D strong topological insulator these
states are robust and are insensitive to weak disorder and interactions. In
this paper we show that the presence of inversion symmetry greatly simplifies
the problem of evaluating the Z_2 invariants. We show that the invariants can
be determined from the knowledge of the parity of the occupied Bloch
wavefunctions at the time reversal invariant points in the Brillouin zone.
Using this approach, we predict a number of specific materials are strong
topological insulators, including the semiconducting alloy Bi_{1-x} Sb_x as
well as \alpha-Sn and HgTe under uniaxial strain. This paper also includes an
expanded discussion of our formulation of the topological insulators in both
two and three dimensions, as well as implications for experiments.Comment: 16 pages, 7 figures; published versio
Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface
We report magneto-transport studies of a two-dimensional electron system
formed in an inversion layer at the interface between a hydrogen-passivated
Si(111) surface and vacuum. Measurements in the integer quantum Hall regime
demonstrate the expected sixfold valley degeneracy for these surfaces is
broken, resulting in an unequal occupation of the six valleys and anisotropy in
the resistance. We hypothesize the misorientation of Si surface breaks the
valley states into three unequally spaced pairs, but the observation of odd
filling factors, is difficult to reconcile with non-interacting electron
theory.Comment: 4 pages, 4 figures, to appear in Physical Review Letter
Spin Relaxation in a Quantum Dot due to Nyquist Noise
We calculate electron and nuclear spin relaxation rates in a quantum dot due
to the combined action of Nyquist noise and electron-nuclei hyperfine or
spin-orbit interactions. The relaxation rate is linear in the resistance of the
gate circuit and, in the case of spin-orbit interaction, it depends essentially
on the orientations of both the static magnetic field and the fluctuating
electric field, as well as on the ratio between Rashba and Dresselhaus
interaction constants. We provide numerical estimates of the relaxation rate
for typical system parameters, compare our results with other, previously
discussed mechanisms, and show that the Nyquist mechanism can have an
appreciable effect for experimentally relevant systems.Comment: v2: New discussion of arbitrary gate setups (1 new figure), more
Comments on experiments; 6 pages, 4 figure
Many-body spin related phenomena in ultra-low-disorder quantum wires
Zero length quantum wires (or point contacts) exhibit unexplained conductance
structure close to 0.7 X 2e^2/h in the absence of an applied magnetic field. We
have studied the density- and temperature-dependent conductance of
ultra-low-disorder GaAs/AlGaAs quantum wires with nominal lengths l=0 and 2 mu
m, fabricated from structures free of the disorder associated with modulation
doping. In a direct comparison we observe structure near 0.7 X 2e^2/h for l=0
whereas the l=2 mu m wires show structure evolving with increasing electron
density to 0.5 X 2e^2/h in zero magnetic field, the value expected for an ideal
spin-split sub-band. Our results suggest the dominant mechanism through which
electrons interact can be strongly affected by the length of the 1D region.Comment: 5 Pages, 4 figure
Is there a renormalization of the 1D conductance in Luttinger Liquid model?
Properties of 1D transport strongly depend on the proper choice of boundary
conditions. It has been frequently stated that the Luttinger Liquid (LL)
conductance is renormalized by the interaction as . To
contest this result I develop a model of 1D LL wire with the interaction
switching off at the infinities. Its solution shows that there is no
renormalization of the universal conductance while the electrons have a free
behavior in the source and drain reservoirs.Comment: 5 pages, RevTex 2.0, attempted repair of tex error
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