Current perpendicular to plane Giant Magnetoresistance (GMR) in laminated nanostructures

We theoretically studied spin dependent electron transport perpendicular-to-plain (CPP) in magnetic laminated multilayered structures by using Kubo formalism. We took into account not only bulk scattering, but the interface resistance due to both specular and diffuse reflection and also spin conserving and spin-flip processes. It was shown that spin-flip scattering at interfaces substantially reduces the value of GMR. This can explain the experimental observations that the CPP GMR ratio for laminated structures only slightly increases as compared to non-laminated ones despite lamination induces a significant increase in CPP resistance.Comment: 4 pages, 2 figure

Hydrogenic Spin Quantum Computing in Silicon: A Digital Approach

We suggest an architecture for quantum computing with spin-pair encoded qubits in silicon. Electron-nuclear spin-pairs are controlled by a dc magnetic field and electrode-switched on and off hyperfine interaction. This digital processing is insensitive to tuning errors and easy to model. Electron shuttling between donors enables multi-qubit logic. These hydrogenic spin qubits are transferable to nuclear spin-pairs, which have long coherence times, and electron spin-pairs, which are ideally suited for measurement and initialization. The architecture is scalable to highly parallel operation.Comment: 4 pages, 5 figures; refereed and published version with improved introductio

Quantized Thermal Transport in the Fractional Quantum Hall Effect

We analyze thermal transport in the fractional quantum Hall effect (FQHE), employing a Luttinger liquid model of edge states. Impurity mediated inter-channel scattering events are incorporated in a hydrodynamic description of heat and charge transport. The thermal Hall conductance, $K_H$, is shown to provide a new and universal characterization of the FQHE state, and reveals non-trivial information about the edge structure. The Lorenz ratio between thermal and electrical Hall conductances {\it violates} the free-electron Wiedemann-Franz law, and for some fractional states is predicted to be {\it negative}. We argue that thermal transport may provide a unique way to detect the presence of the elusive upstream propagating modes, predicted for fractions such as $\nu=2/3$ and $\nu=3/5$.Comment: 6 pages REVTeX, 2 postscript figures (uuencoded and compressed

Corporate Taxation and International Charter Competition

Corporate charter competition has become an increasingly international phenomenon. The thesis of this Article is that this development in corporate law requires a greater focus on corporate tax law. We first demonstrate how a tax system\u27s capacity to distort the international charter market depends both upon its approach to determining corporate location and upon the extent to which it taxes foreign source corporate profits. We also show, however, that it is not possible to remove all distortions through modifications to the tax system alone. We present instead two alternative methods for preserving an international charter market. The first-best solution involves severing the markets for corporate law and corporate tax law through coordination of locational rules under each regime, with a place of incorporation rule for corporate law and a real seat rule for corporate tax. The second-best solution relies on a properly designed federal structure. The crucial design elements for such a federal system are the allocation of substantive law between the federal and subfederal levels, corporate and corporate tax locational rules, and the taxation of corporate migration and foreign source corporate profits. With due attention to these details, an international charter market can avoid the potentially distorting effects of corporate taxation. In the final part of the Article we apply our analysis to the United States, Canada, the European Union, and Israel, and show how difficult it is, in the real world, to separate corporate charter and corporate tax competition

Topological Insulators with Inversion Symmetry

Topological insulators are materials with a bulk excitation gap generated by the spin orbit interaction, and which are different from conventional insulators. This distinction is characterized by Z_2 topological invariants, which characterize the groundstate. In two dimensions there is a single Z_2 invariant which distinguishes the ordinary insulator from the quantum spin Hall phase. In three dimensions there are four Z_2 invariants, which distinguish the ordinary insulator from "weak" and "strong" topological insulators. These phases are characterized by the presence of gapless surface (or edge) states. In the 2D quantum spin Hall phase and the 3D strong topological insulator these states are robust and are insensitive to weak disorder and interactions. In this paper we show that the presence of inversion symmetry greatly simplifies the problem of evaluating the Z_2 invariants. We show that the invariants can be determined from the knowledge of the parity of the occupied Bloch wavefunctions at the time reversal invariant points in the Brillouin zone. Using this approach, we predict a number of specific materials are strong topological insulators, including the semiconducting alloy Bi_{1-x} Sb_x as well as \alpha-Sn and HgTe under uniaxial strain. This paper also includes an expanded discussion of our formulation of the topological insulators in both two and three dimensions, as well as implications for experiments.Comment: 16 pages, 7 figures; published versio

Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate the expected sixfold valley degeneracy for these surfaces is broken, resulting in an unequal occupation of the six valleys and anisotropy in the resistance. We hypothesize the misorientation of Si surface breaks the valley states into three unequally spaced pairs, but the observation of odd filling factors, is difficult to reconcile with non-interacting electron theory.Comment: 4 pages, 4 figures, to appear in Physical Review Letter

Spin Relaxation in a Quantum Dot due to Nyquist Noise

We calculate electron and nuclear spin relaxation rates in a quantum dot due to the combined action of Nyquist noise and electron-nuclei hyperfine or spin-orbit interactions. The relaxation rate is linear in the resistance of the gate circuit and, in the case of spin-orbit interaction, it depends essentially on the orientations of both the static magnetic field and the fluctuating electric field, as well as on the ratio between Rashba and Dresselhaus interaction constants. We provide numerical estimates of the relaxation rate for typical system parameters, compare our results with other, previously discussed mechanisms, and show that the Nyquist mechanism can have an appreciable effect for experimentally relevant systems.Comment: v2: New discussion of arbitrary gate setups (1 new figure), more Comments on experiments; 6 pages, 4 figure

Many-body spin related phenomena in ultra-low-disorder quantum wires

Zero length quantum wires (or point contacts) exhibit unexplained conductance structure close to 0.7 X 2e^2/h in the absence of an applied magnetic field. We have studied the density- and temperature-dependent conductance of ultra-low-disorder GaAs/AlGaAs quantum wires with nominal lengths l=0 and 2 mu m, fabricated from structures free of the disorder associated with modulation doping. In a direct comparison we observe structure near 0.7 X 2e^2/h for l=0 whereas the l=2 mu m wires show structure evolving with increasing electron density to 0.5 X 2e^2/h in zero magnetic field, the value expected for an ideal spin-split sub-band. Our results suggest the dominant mechanism through which electrons interact can be strongly affected by the length of the 1D region.Comment: 5 Pages, 4 figure

Is there a renormalization of the 1D conductance in Luttinger Liquid model?

Properties of 1D transport strongly depend on the proper choice of boundary conditions. It has been frequently stated that the Luttinger Liquid (LL) conductance is renormalized by the interaction as $g \frac{e^2} {h}$. To contest this result I develop a model of 1D LL wire with the interaction switching off at the infinities. Its solution shows that there is no renormalization of the universal conductance while the electrons have a free behavior in the source and drain reservoirs.Comment: 5 pages, RevTex 2.0, attempted repair of tex error