A 0.35 mu m SiGeBICMOS front end for GSM low if cellular receiver applications

This work presents the design and simulation of a cellular receiver front end for GSM applications implemented in 0.35 SiGe BiCMOS technology. The Low Noise Amplifier is designed using Bipolar transistors, and achieves a voltage gain of 17 dB at 950 MHz, while its Noise Figure is suppressed to 1.9 dB in the same frequency region. The resulting 1 dB compression point is -12 dBm and the IIP3 -3 dBm. The mixer is a double balanced Gilbert cell performing an IIP3 of 14 dBm, while the single sideband noise figure is around 12 dB. The whole structure is oriented to low IF receiver applications while the overall power consumption is 31 mW provided from a 3.3 V power supply

A high-density DRAM cell with built-in gain stage

A high density dynamic random access memory (DRAM) cell with built-in gain stage was proposed. It has increased reading speed, elongated refresh period, low-power oriented operation, and minor layout area penalty. New DRAM cell structure has a current mode sensing read operation, an increased retention time and a reduced memory pheriphery circuitry

Management of charge pump circuits

In this paper, a controlling circuit is proposed for the management of charge pump circuits. This is achieved with the use of a pattern generator and a feedback circuit so that the produced high voltage of any given charge pump to be tuned to the desired specifications. The output of the pump generates the required high-voltage pattern independently of its load, the temperature variations and the frequency of the clock, while it is operating towards the minimum required power level

Device simulation of a n-DMOS cell with trench isolation

The DMOS cell, a high-voltage transistor, implemented in low voltage standard 0.18 mum double-well CMOS technology with trench isolation is studied. The operation of the cell is investigated with the use of a device simulator while the effect of the trench to the operation of the cell is revealed. (C) 2000 Elsevier Science Ltd. All rights reserved