GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions

GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine one-dimensional properties with the magnetic properties of (Ga,Mn)As and provide natural, self assembled structures for nanospintronics.Comment: 13 pages, 6 figure

Dislocation Free Island Formation in Heteroepitaxial Growth: An Equilibrium Study

We investigate the equilibrium properties of strained heteroepitaxial systems, incorporating the formation and the growth of a wetting film, dislocation free island formation, and ripening. The derived phase diagram provides a detailed characterization of the possible growth modes in terms of the island density, equilibrium island size, and wetting layer thickness. Comparing our predictions with experimental results we discuss the growth conditions that can lead to stable islands as well as ripening.Comment: 4 pages, LaTeX, 3 ps figure

Generalized Drude model: Unification of ballistic and diffusive electron transport

For electron transport in parallel-plane semiconducting structures, a model is developed that unifies ballistic and diffusive transport and thus generalizes the Drude model. The unified model is valid for arbitrary magnitude of the mean free path and arbitrary shape of the conduction band edge profile. Universal formulas are obtained for the current-voltage characteristic in the nondegenerate case and for the zero-bias conductance in the degenerate case, which describe in a transparent manner the interplay of ballistic and diffusive transport. The semiclassical approach is adopted, but quantum corrections allowing for tunneling are included. Examples are considered, in particular the case of chains of grains in polycrystalline or microcrystalline semiconductors with grain size comparable to, or smaller than, the mean free path. Substantial deviations of the results of the unified model from those of the ballistic thermionic-emission model and of the drift-diffusion model are found. The formulation of the model is one-dimensional, but it is argued that its results should not differ substantially from those of a fully three-dimensional treatment.Comment: 14 pages, 5 figures, REVTEX file, to appear in J. Phys.: Condens. Matte

In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy

Si and Ge growth on the stripe-patterned Si (001) substrates is studied using in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). During Si buffer growth, the evolution of RHEED patterns reveals a rapid change of the stripe morphology from a multifaceted “U” to a single-faceted “V” geometry with {119} sidewall facets. This allows to control the pattern morphology and to stop Si buffer growth once a well-defined stripe geometry is formed. Subsequent Ge growth on “V”-shaped stripes was performed at two different temperatures of 520 and 600°C. At low temperature of 520°C, pronounced sidewall ripples are formed at a critical coverage of 4.1 monolayers as revealed by the appearance of splitted diffraction streaks in RHEED. At 600°C, the ripple onset is shifted toward higher coverages, and at 5.2 monolayers dome islands are formed at the bottom of the stripes. These observations are in excellent agreement with STM images recorded at different Ge coverages. Therefore, RHEED is an efficient tool for in situ control of the growth process on stripe-patterned substrate templates. The comparison of the results obtained at different temperature reveals the importance of kinetics on the island formation process on patterned substrates

Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires

The growth of semiconductor (SC) nanowires (NW) by CVD using Au-catalyzed VLS process has been widely studied over the past few years. Among others SC, it is possible to grow pure Si or SiGe NW thanks to these techniques. Nevertheless, Au could deteriorate the electric properties of SC and the use of other metal catalysts will be mandatory if NW are to be designed for innovating electronic. First, this article's focus will be on SiGe NW's growth using Au catalyst. The authors managed to grow SiGe NW between 350 and 400°C. Ge concentration (x) in Si1-xGex NW has been successfully varied by modifying the gas flow ratio: R = GeH4/(SiH4 + GeH4). Characterization (by Raman spectroscopy and XRD) revealed concentrations varying from 0.2 to 0.46 on NW grown at 375°C, with R varying from 0.05 to 0.15. Second, the results of Si NW growths by CVD using alternatives catalysts such as platinum-, palladium- and nickel-silicides are presented. This study, carried out on a LPCVD furnace, aimed at defining Si NW growth conditions when using such catalysts. Since the growth temperatures investigated are lower than the eutectic temperatures of these Si-metal alloys, VSS growth is expected and observed. Different temperatures and HCl flow rates have been tested with the aim of minimizing 2D growth which induces an important tapering of the NW. Finally, mechanical characterization of single NW has been carried out using an AFM method developed at the LTM. It consists in measuring the deflection of an AFM tip while performing approach-retract curves at various positions along the length of a cantilevered NW. This approach allows the measurement of as-grown single NW's Young modulus and spring constant, and alleviates uncertainties inherent in single point measurement

The American Congress of Rehabilitation Medicine Diagnostic Criteria for Mild Traumatic Brain Injury

Objective: To develop new diagnostic criteria for mild traumatic brain injury (TBI) that are appropriate for use across the lifespan and in sports, civilian trauma, and military settings. Design: Rapid evidence reviews on 12 clinical questions and Delphi method for expert consensus. Participants: The Mild Traumatic Brain Injury Task Force of the American Congress of Rehabilitation Medicine Brain Injury Special Interest Group convened a Working Group of 17 members and an external interdisciplinary expert panel of 32 clinician-scientists. Public stakeholder feedback was analyzed from 68 individuals and 23 organizations. Results: The first 2 Delphi votes asked the expert panel to rate their agreement with both the diagnostic criteria for mild TBI and the supporting evidence statements. In the first round, 10 of 12 evidence statements reached consensus agreement. Revised evidence statements underwent a second round of expert panel voting, where consensus was achieved for all. For the diagnostic criteria, the final agreement rate, after the third vote, was 90.7%. Public stakeholder feedback was incorporated into the diagnostic criteria revision prior to the third expert panel vote. A terminology question was added to the third round of Delphi voting, where 30 of 32 (93.8%) expert panel members agreed that ‘the diagnostic label ‘concussion’ may be used interchangeably with ‘mild TBI’ when neuroimaging is normal or not clinically indicated.’ Conclusions: New diagnostic criteria for mild TBI were developed through an evidence review and expert consensus process. Having unified diagnostic criteria for mild TBI can improve the quality and consistency of mild TBI research and clinical care.</p