Spatial heterogeneity in the radiogenic activity of the lunar interior: Inferences from CHACE and LLRI on Chandrayaan-1

In the past, clues on the potential radiogenic activity of the lunar interior have been obtained from the isotopic composition of noble gases like Argon. Excess Argon (40) relative to Argon (36), as compared to the solar wind composition, is generally ascribed to the radiogenic activity of the lunar interior. Almost all the previous estimates were based on, 'on-the-spot' measurements from the landing sites. Relative concentration of the isotopes of 40Ar and 36Ar along a meridian by the Chandra's Altitudinal Composition Explorer (CHACE) experiment, on the Moon Impact Probe (MIP) of India's first mission to Moon, has independently yielded clues on the possible spatial heterogeneity in the radiogenic activity of the lunar interior in addition to providing indicative 'antiquity' of the lunar surface along the ground track over the near side of the moon. These results are shown to broadly corroborate the independent topography measurements by the Lunar Laser Ranging Instrument (LLRI) in the main orbiter Chandrayaan-1. The unique combination of these experiments provided high spatial resolution data while indicating the possible close linkages between the lunar interior and the lunar ambience

Electronic Spin Transport in Dual-Gated Bilayer Graphene

The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices fabricated in a new device architecture which allows us to make a comparative study by separately investigating the roles of substrate and polymer residues on spin relaxation. First, the comparison between spin valves fabricated on SiO2 and BN substrates suggests that substrate-related charged impurities, phonons and roughness do not limit the spin transport in current devices. Next, the observation of a 5-fold enhancement in spin relaxation time in the encapsulated device highlights the significance of polymer residues on spin relaxation. We observe a spin relaxation length of ~ 10 um in the encapsulated bilayer with a charge mobility of 24000 cm2/Vs. The carrier density dependence of spin relaxation time has two distinct regimes; n<4 x 1012 cm-2, where spin relaxation time decreases monotonically as carrier concentration increases, and n>4 x 1012 cm-2, where spin relaxation time exhibits a sudden increase. The sudden increase in the spin relaxation time with no corresponding signature in the charge transport suggests the presence of a magnetic resonance close to the charge neutrality point. We also demonstrate, for the first time, spin transport across bipolar p-n junctions in our dual-gated device architecture that fully integrates a sequence of encapsulated regions in its design. At low temperatures, strong suppression of the spin signal was observed while a transport gap was induced, which is interpreted as a novel manifestation of impedance mismatch within the spin channel

Spin-Dependent Transport in Fe/GaAs(100)/Fe Vertical Spin-Valves

The integration of magnetic materials with semiconductors will lead to the development of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both data storage and processing. While the fabrication and transport studies of lateral SFET have attracted greatly attentions, there are only few studies of vertical devices, which may offer the opportunity for the future three-dimensional integration. Here, we provide evidence of two-terminal electrical spin injection and detection in Fe/GaAs/Fe vertical spin-valves (SVs) with the GaAs layer of 50 nanometers thick and top and bottom Fe electrodes deposited by molecular beam epitaxy. The spin-valve effect, which corresponds to the individual switching of the top and bottom Fe layers, is bias dependent and observed up to 20 K. We propose that the strongly bias-and temperature-dependent MR is associated with spin transport at the interfacial Fe/GaAs Schottky contacts and in the GaAs membranes, where balance between the barrier profiles as well as the dwell time to spin lifetime ratio are crucial factors for determining the device operations. The demonstration of the fabrication and spin injection in the vertical SV with a semiconductor interlayer is expected to open a new avenue in exploring the SFET

Pyloro-duodenal hernia with formation of enterocutaneous fistula in a buffalo calf following a dog attack

A body wall hernia entrapping abomasum and concurrent duodenal fistula in a buffalo calf aged about 8 months, secondary to a dog bite was successfully treated by closure of fistulous orifice and ventro lateral herniorrhaphy.Keywords: Abomaso-epiplocele, Buffalo calf, Duodenal fistula, Herniorrhaphy

Pyloro-duodenal hernia with formation of enterocutaneous fistula in a buffalo calf following a dog attack

A body wall hernia entrapping abomasum and concurrent duodenal fistula in a buffalo calf aged about 8 months, secondary to a dog bite was successfully treated by closure of fistulous orifice and ventro lateral herniorrhaphy

OVJ-073-05-15_CR.indd

Abstract A body wall hernia entrapping abomasum and concurrent duodenal fistula in a buffalo calf aged about 8 months, secondary to a dog bite was successfully treated by closure of fistulous orifice and ventro lateral herniorrhaphy