Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

In this work, a GaN-on-Si quasi-vertical Schottky diode was demonstrated on a locally grown n-GaN drift layer using Selective Area Growth (SAG). The diode achieved a current density of 2.5 kA/cm2, a specific on-resistance RON,sp of 1.9 mΩ cm2 despite the current crowding effect in quasi-vertical structures, and an on/off current ratio (Ion/Ioff) of 1010. Temperature-dependent current–voltage characteristics were measured in the range of 313–433 K to investigate the mechanisms of leakage conduction in the device. At near-zero bias, thermionic emission (TE) was found to dominate. By increasing up to 10 V, electrons gained enough energy to excite into trap states, leading to the dominance of Frenkel–Poole emission (FPE). For a higher voltage range (−10 V to −40 V), the increased electric field facilitated the hopping of electrons along the continuum threading dislocations in the “bulk” GaN layers, and thus, variable range hopping became the main mechanism for the whole temperature range. This work provides an in-depth insight into the leakage conduction transport on pseudo-vertical GaN-on-Si Schottky barrier diodes (SBDs) grown by localized epitaxy

Influence of fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode

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Low leakage and high breakdown voltage GaN-on-GaN Schottky diode by TMAH surface treatment.

International audienceIn this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaNon-GaN Schottky diode is explored by I-V and C-V characterisation. TMAH surface treatment leads to an improvement in the forward and reverse characteristics ofthe device and improvement in breakdown voltage (BV) by almost 200V compared to just HF treated sample. Additional XPS characterisations reveals reduction in both O and C concentration due to TMAH treatment

Low leakage and high breakdown voltage GaN-on-GaN Schottky diode by TMAH surface treatment.

International audienceIn this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaNon-GaN Schottky diode is explored by I-V and C-V characterisation. TMAH surface treatment leads to an improvement in the forward and reverse characteristics ofthe device and improvement in breakdown voltage (BV) by almost 200V compared to just HF treated sample. Additional XPS characterisations reveals reduction in both O and C concentration due to TMAH treatment