Single Flux Transistor: the controllable interplay of Coherent Quantum Phase Slip and Flux quantization

The Single Cooper Pair Josephson Transistor is a device that exhibits at the same time charge quantization and phase coherence. Coherent quantum phase slip phenomenon is "dual" the Josephson phase coherence while the charge quantization is dual to the flux quantization. We present the experimental demonstration and the theoretical description of a new superconducting device - Single Flux Transistor, which is dual to the Single Cooper Pair Transistor. Our transport measurements show the periodic modulation of the critical voltage by the external magnetic field. The obtained current-voltage characteristics show the hysteretic behavior, which we attribute to the intrinsic self-heating of charge carriers.Comment: 5 pages, 4 figure

Parity effect and single-electron injection for Josephson-junction chains deep in the insulating state

We have made a systematic investigation of charge transport in 1D chains of Josephson junctions where the characteristic Josephson energy is much less than the single-island Cooper-pair charging energy, $E_\mathrm{J}\ll E_{CP}$. Such chains are deep in the insulating state, where superconducting phase coherence across the chain is absent, and a voltage threshold for conduction is observed at the lowest temperatures. We find that Cooper-pair tunneling in such chains is completely suppressed. Instead, charge transport is dominated by tunneling of single electrons, which is very sensitive to the presence of BCS quasiparticles on the superconducting islands of the chain. Consequently we observe a strong parity effect, where the threshold voltage vanishes sharply at a characteristic parity temperature $T^*$, which is significantly lower than the the critical temperature, $T_c$. A measurable and thermally-activated zero-bias conductance appears above $T^*$, with an activation energy equal to the superconducting gap, confirming the role of thermally-excited quasiparticles. Conduction below $T^*$ and above the voltage threshold occurs via injection of single electrons/holes into the Cooper-pair insulator, forming a non-equilibrium steady state with a significantly enhanced effective temperature. Our results explicitly show that single-electron transport dominates deep in the insulating state of Josephson-junction arrays. This conduction process has mostly been ignored in previous studies of both superconducting junction arrays and granular superconducting films below the superconductor-insulator quantum phase transition.Comment: 8 pages, 6 figure

Pumping properties of the hybrid single-electron transistor in dissipative environment

Pumping characteristics were studied of the hybrid normal-metal/superconductor single-electron transistor embedded in a high-ohmic environment. Two 3 micrometer-long microstrip resistors of CrOx with a sum resistance R=80kOhm were placed adjacent to this hybrid device. Substantial improvement of pumping and reduction of the subgap leakage were observed in the low-MHz range. At higher frequencies 0.1-1GHz, a slowdown of tunneling due to the enhanced damping and electron heating negatively affected the pumping, as compared to the reference bare devices.Comment: 3 pages 4 figure

Measurement of the shot noise in a single electron transistor

We have systematically measured the shot noise in a single electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.Comment: 4 figure

Charge noise in single-electron transistors and charge qubits may be caused by metallic grains

We report on measurements of low-frequency noise in a single-electron transistor (SET) from a few hertz up to 10 MHz. Measurements were done for different bias and gate voltages, which allow us to separate noise contributions from different noise sources. We find a 1/f noise spectrum with two Lorentzians superimposed. The cut-off frequency of one of the Lorentzians varies systematically with the potential of the SET island. Our data is consistent with two single-charge fluctuators situated close to the tunnel barrier. We suggest that these are due to random charging of aluminum grains, each acting as a single-electron box with tunnel coupling to one of the leads and capacitively coupled to the SET island. We are able to fit the data to our model and extract parameters for the fluctuators

A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures

Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.Comment: 6 pages, 4 figures, minor changes from the previous version

Photon assisted tunneling as an origin of the Dynes density of states

We show that the effect of a high-temperature environment in current transport through a normal metal-insulator-superconductor tunnel junction can be described by an effective density of states (DOS) in the superconductor. In the limit of a resistive low-ohmic environment, this DOS reduces into the well-known Dynes form. Our theoretical result is supported by experiments in engineered environments. We apply our findings to improve the performance of a single-electron turnstile, a potential candidate for a metrological current source.Comment: 4+3 pages, 4 figures; updated to the published version, includes EPAPS supplementary materia

Experimental investigation of hybrid single-electron turnstiles with high charging energy

We present an experimental study of hybrid turnstiles with high charging energies in comparison to the superconducting gap. The device is modeled with the sequential tunneling approximation. The backtunneling effect is shown to limit the amplitude of the gate drive and thereby the maximum pumped current of the turnstile. We compare results obtained with sine and square wave drive and show how a fast rise time can suppress errors due to leakage current. Quantized current plateaus up to 160 pA are demonstrated.Comment: 4 pages, 3 figure

Parallel pumping of electrons

We present simultaneous operation of ten single-electron turnstiles leading to one order of magnitude increase in current level up to 100 pA. Our analysis of device uniformity and background charge stability implies that the parallelization can be made without compromising the strict requirements of accuracy and current level set by quantum metrology. In addition, we discuss how offset charge instability limits the integration scale of single-electron turnstiles.Comment: 6 pages, 4 figures, 1 tabl