Elementary Excitations in One-Dimensional Electromechanical Systems; Transport with Back-Reaction

Using an exactly solvable model, we study low-energy properties of a one-dimensional spinless electron fluid contained in a quantum-mechanically moving wire located in a static magnetic field. The phonon and electric current are coupled via Lorentz force and the eigenmodes are described by two independent boson fluids. At low energies, the two boson modes are charged while one of them has excitation gap due to back-reaction of the Lorentz force. The theory is illustrated by evaluating optical absorption spectra. Our results are exact and show a non-perturbative regime of electron transport

Communication and control in an integrated manufacturing system

Typically, components in a manufacturing system are all centrally controlled. Due to possible communication bottlenecking, unreliability, and inflexibility caused by using a centralized controller, a new concept of system integration called an Integrated Multi-Robot System (IMRS) was developed. The IMRS can be viewed as a distributed real time system. Some of the current research issues being examined to extend the framework of the IMRS to meet its performance goals are presented. These issues include the use of communication coprocessors to enhance performance, the distribution of tasks and the methods of providing fault tolerance in the IMRS. An application example of real time collision detection, as it relates to the IMRS concept, is also presented and discussed

Microscopic origin of light emission in Al_yGa_{1-y}N/GaN superlattice: Band profile and active site

We present first-principles calculations of AlGaN/GaN superlattice, clarifying the microscopic origin of the light emission and revealing the effect of local polarization within the quantum well. Profile of energy band and distributions of electrons and holes demonstrate the existence of a main active site in the well responsible for the main band-edge light emission. This site appears at the position where the local polarization becomes zero. With charge injection, the calculated optical spectra show that the broadening of the band gap at the active site leads to the blueshift of emission wavelength

Box ball system associated with antisymmetric tensor crystals

A new box ball system associated with an antisymmetric tensor crystal of the quantum affine algebra of type A is considered. This includes the so-called colored box ball system with capacity 1 as the simplest case. Infinite number of conserved quantities are constructed and the scattering rule of two olitons are given explicitly.Comment: 15 page

Scattering Rule in Soliton Cellular Automaton associated with Crystal Base of Uq(D4(3))U_q(D_4^{(3)})

In terms of the crystal base of a quantum affine algebra $U_q(\mathfrak{g})$, we study a soliton cellular automaton (SCA) associated with the exceptional affine Lie algebra $\mathfrak{g}=D_4^{(3)}$. The solitons therein are labeled by the crystals of quantum affine algebra $U_q(A_1^{(1)})$. The scatteing rule is identified with the combinatorial $R$ matrix for $U_q(A_1^{(1)})$-crystals. Remarkably, the phase shifts in our SCA are given by {\em 3-times} of those in the well-known box-ball system.Comment: 25 page

Efficiency of Nonlinear Particle Acceleration at Cosmic Structure Shocks

We have calculated the evolution of cosmic ray (CR) modified astrophysical shocks for a wide range of shock Mach numbers and shock speeds through numerical simulations of diffusive shock acceleration (DSA) in 1D quasi- parallel plane shocks. The simulations include thermal leakage injection of seed CRs, as well as pre-existing, upstream CR populations. Bohm-like diffusion is assumed. We model shocks similar to those expected around cosmic structure pancakes as well as other accretion shocks driven by flows with upstream gas temperatures in the range $T_0=10^4-10^{7.6}$K and shock Mach numbers spanning $M_s=2.4-133$. We show that CR modified shocks evolve to time-asymptotic states by the time injected particles are accelerated to moderately relativistic energies (p/mc \gsim 1), and that two shocks with the same Mach number, but with different shock speeds, evolve qualitatively similarly when the results are presented in terms of a characteristic diffusion length and diffusion time. For these models the time asymptotic value for the CR acceleration efficiency is controlled mainly by shock Mach number. The modeled high Mach number shocks all evolve towards efficiencies $\sim 50$%, regardless of the upstream CR pressure. On the other hand, the upstream CR pressure increases the overall CR energy in moderate strength shocks ($M_s \sim {\rm a few}$). (abridged)Comment: 23 pages, 12 ps figures, accepted for Astrophysical Journal (Feb. 10, 2005

Non-Volatile Magnonic Logic Circuits Engineering

We propose a concept of magnetic logic circuits engineering, which takes an advantage of magnetization as a computational state variable and exploits spin waves for information transmission. The circuits consist of magneto-electric cells connected via spin wave buses. We present the result of numerical modeling showing the magneto-electric cell switching as a function of the amplitude as well as the phase of the spin wave. The phase-dependent switching makes it possible to engineer logic gates by exploiting spin wave buses as passive logic elements providing a certain phase-shift to the propagating spin waves. We present a library of logic gates consisting of magneto-electric cells and spin wave buses providing 0 or p phase shifts. The utilization of phases in addition to amplitudes is a powerful tool which let us construct logic circuits with a fewer number of elements than required for CMOS technology. As an example, we present the design of the magnonic Full Adder Circuit comprising only 5 magneto-electric cells. The proposed concept may provide a route to more functional wave-based logic circuitry with capabilities far beyond the limits of the traditional transistor-based approach

Amorphous metallizations for high-temperature semiconductor device applications

The initial results of work on a class of semiconductor metallizations which appear to hold promise as primary metallizations and diffusion barriers for high temperature device applications are presented. These metallizations consist of sputter-deposited films of high T sub g amorphous-metal alloys which (primarily because of the absence of grain boundaries) exhibit exceptionally good corrosion-resistance and low diffusion coefficients. Amorphous films of the alloys Ni-Nb, Ni-Mo, W-Si, and Mo-Si were deposited on Si, GaAs, GaP, and various insulating substrates. The films adhere extremely well to the substrates and remain amorphous during thermal cycling to at least 500 C. Rutherford backscattering and Auger electron spectroscopy measurements indicate atomic diffussivities in the 10 to the -19th power sq cm/S range at 450 C

Voltage-Controlled Surface Magnetization of Itinerant Ferromagnet Ni_(1-x)Cu_x

We argue that surface magnetization of a metallic ferromagnet can be turned on and off isothermally by an applied voltage. For this, the material's electron subsystem must be close enough to the boundary between para- and ferromagnetic regions on the electron density scale. For the 3d series, the boundary is between Ni and Cu, which makes their alloy a primary candidate. Using Ginzburg-Landau functional, which we build from Ni_(1-x)Cu_x empirical properties, ab-initio parameters of Ni and Cu, and orbital-free LSDA, we show that the proposed effect is experimentally observable.Comment: 4 pages; 2 figures; submitted to PRL February 16th 2008; transferred to PRB June 21st 2008; published July 15th 200