A GaAs-based self-aligned stripe distributed feedback laser

We demonstrate operation of a GaAs-based self-aligned stripe (SAS) distributed feedback (DFB) laser. In this structure, a first order GaInP/GaAs index-coupled DFB grating is built within the p-doped AlGaAs layer between the active region and the n-doped GaInP opto-electronic confinement layer of a SAS laser structure. In this process no Al-containing layers are exposed to atmosphere prior to overgrowth. The use of AlGaAs cladding affords the luxury of full flexibility in upper cladding design, which proved necessary due to limitations imposed by the grating infill and overgrowth with the GaInP current block layer. Resultant devices exhibit single-mode lasing with high side-mode-suppression of >40 dB over the temperature range 20 °C–70 °C. The experimentally determined optical profile and grating confinement correlate well with those simulated using Fimmwave

GaAs-based superluminescent diodes with window-like facet structure for low spectral modulation at high output powers

We demonstrate a GaAs-based superluminescent diode ( SLD ) based on the incorporation of a window-like back facet into a self-aligned stripe structure in order to reduce the effective facet reflectivity. This allows the realisation of SLDs with low spectral modulation depth ( SMD ) at high power spectral density ( PSD ) , without the application of anti-reflection coatings to either facet. This approach is therefore compatible with ultra-broadband gain active elements. We show that 30 mW output power can be attained in a narrow bandwidth, corresponding to 2.2 mW nm−1 PSD with only 5% SMD, centred about 990 nm. We discuss the design criteria for high power and low SMD and the deviation from a linear dependence of SMD on output power, resulting from Joule heating in the self-aligned stripe

Improved Temperature Performance of 1.31-mu/m Quantum Dot Lasers by Optimized Ridge Waveguide Design

In this letter, we demonstrate the importance of the fabricated device structure for the external differential efficiency, threshold current density, and maximum operating temperature for ground state operation of a 1.31-mu/m quantum dot laser. The introduction of a shallow ridge etch design and selective electroplating of the gold bondpads is demonstrated to offer improved performance in comparison to a deep ridge etch design with thinner evaporated gold bondpads

Simulation of Broad Spectral Bandwidth Emitters at 1060 nm for Optical Coherence Tomography

The simulation of broad spectral bandwidth light sources (semiconductor optical amplifiers (SOA) and superluminescent diodes (SLD)) for application in ophthalmic optical coherence tomography is reported. The device requirements and origin of key device parameters are outlined, and a range of single and double InGaAs/GaAs quantum well (QW) active elements are simulated with a view to application in different OCT embodiments. We confirm that utilising higher order optical transitions is beneficial for single QW SOAs, but may introduce deleterious spectral modulation in SLDs. We show how an addition QW may be introduced to eliminate this spectral modulation, but that this results in a reduction of the gain spectrum width. We go on to explore double QW structures where the roles of the two QWs are reversed, with the narrow QW providing long wavelength emission and gain. We show how this modification in the density of states results in a significant increase in gain-spectrum width for a given current. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only

High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-/spl mu/m multilayer InAs-GaAs quantum-dot lasers. A very low continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm/sup 2/ are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm/sup 2/ for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets

Quantum well and dot self-aligned stripe lasers utilizing an InGaP optoelectronic confinement layer

We demonstrate and study a novel process for fabrication of GaAs-based self-aligned lasers based upon a single over-growth. A lattice-matched n-doped InGaP layer is utilized for both electrical and optical confinements. Single-lateral-mode emission is demonstrated initially from an In0.17Ga0.83 As double quantum well laser emitting similar to 980 nm. We then apply the fabrication technique to a quantum dot laser emitting similar to 1300 nm. Furthermore, we analyze the breakdown mechanism in our devices and discuss the limitations of index guiding in our structures

Primordial nucleosynthesis and hadronic decay of a massive particle with a relatively short lifetime

In this paper we consider the effects on big bang nucleosynthesis (BBN) of the hadronic decay of a long-lived massive particle. If high-energy hadrons are emitted near the BBN epoch ($t \sim 10^{-2}$ -- $10^2 \sec$), they extraordinarily inter-convert the background nucleons each other even after the freeze-out time of the neutron to proton ratio. Then, produced light element abundances are changed, and that may result in a significant discrepancy between standard BBN and observations. Especially on the theoretical side, now we can obtain a lot of experimental data of hadrons and simulate the hadronic decay process executing the numerical code of the hadron fragmentation even in the high energy region where we have no experimental data. Using the light element abundances computed in the hadron-injection scenario, we derive a constraint on properties of such a particle by comparing our theoretical results with observations.Comment: 33 pages, 14 postscript figures, reference added, typo corrected, to appear in Phys. Rev.

Final State Rescattering and Color-suppressed \bar B^0-> D^{(*)0} h^0 Decays

The color-suppressed \bar B^0-> D^{(*)0}\pi^0, D^{(*)0}\eta, D^0\omega decay modes have just been observed for the first time. The rates are all larger than expected, hinting at the presence of final state interactions. Considering \bar B^0-> D^{(*)0}\pi^0 mode alone, an elastic D^{(*)}\pi -> D^{(*)}\pi rescattering phase difference \delta \equiv \delta_{1/2} - \delta_{3/2} \sim 30^\circ would suffice, but the \bar B^0-> D^{(*)0}\eta, D^0\omega modes compel one to extend the elastic formalism to SU(3) symmetry. We find that a universal a_2/a_1=0.25 and two strong phase differences 20^\circ \sim \theta < \delta < \delta^\prime \sim 50^\circ can describe both DP and D^*P modes rather well; the large phase of order 50^\circ is needed to account for the strength of {\it both} the D^{(*)0}\pi^0 and D^{(*)0}\eta modes. For DV modes, the nonet symmetry reduces the number of physical phases to just one, giving better predictive power. Two solutions are found. We predict the rates of the \bar B^0-> D^{+}_s K^-, D^{*+}_s K^-, D^0\rho^0, D^+_s K^{*-} and D^0\phi modes, as well as \bar B^0-> D^{0}\bar K^0, D^{*0}\bar K^0, D^{0}\bar K^{*0} modes. The formalism may have implications for rates and CP asymmetries of charmless modes.Comment: REVTeX4, 18 pages, 5 figures, to appear in Phys. Rev.

A study of the centrally produced pi0pi0pi0 channel in pp interactions at 450 GeV/c

The reaction pp -> pf (pi0pi0pi0) ps has been studied at 450 GeV/c. The pi0pi0pi0 effective mass spectrum shows clear eta(547) and pi2(1670) signals. Branching ratios for the eta(547) and pi_2(1670) are given as well as upper limits for the decays of the omega(782), a1(1260) and a2(1320) into 3pi0.Comment: 10 pages, Latex, 4 Figure